Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Raman analysis of phonon modes in a short period AlN/GaN superlattice

Abstract

AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted usingmore » Bose-Einstein statistics was obtained.« less

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2]; ORCiD logo [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of Illinois at Chicago, Chicago, IL (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1439812
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Superlattices and Microstructures
Additional Journal Information:
Journal Volume: 115; Journal Issue: C; Journal ID: ISSN 0749-6036
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Aluminum nitride; Dielectric continuum model; Gallium nitride; Interface phonons; Raman spectroscopy; Superlattice

Citation Formats

Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice. United States: N. p., 2018. Web. doi:10.1016/j.spmi.2018.01.021.
Copy to clipboard
Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., & Dutta, Mitra. Raman analysis of phonon modes in a short period AlN/GaN superlattice. United States. https://doi.org/10.1016/j.spmi.2018.01.021
Copy to clipboard
Sarkar, Ketaki, Datta, Debopam, Gosztola, David J., Shi, Fengyuan, Nicholls, Alan, Stroscio, Michael A., and Dutta, Mitra. Sat . "Raman analysis of phonon modes in a short period AlN/GaN superlattice". United States. https://doi.org/10.1016/j.spmi.2018.01.021. https://www.osti.gov/servlets/purl/1439812.
Copy to clipboard
@article{osti_1439812,
title = {Raman analysis of phonon modes in a short period AlN/GaN superlattice},
author = {Sarkar, Ketaki and Datta, Debopam and Gosztola, David J. and Shi, Fengyuan and Nicholls, Alan and Stroscio, Michael A. and Dutta, Mitra},
abstractNote = {AlN/GaN-based optoelectronic devices have been the subject of intense research underlying the commercialization of efficient devices. Areas of considerable interest are the study of their lattice dynamics, phonon transport, and electron-phonon interactions specific to the interface of these heterostructures which results in additional optical phonon modes known as interface phonon modes. In this study, the framework of the dielectric continuum model (DCM) has been used to compare and analyze the optical phonon modes obtained from experimental Raman scattering measurements on AlN/GaN short-period superlattices. We have observed the localized E2(high), A1(LO) and the E1(TO) modes in superlattice measurements at frequencies shifted from their bulk values. To the best of our knowledge, the nanostructures used in these studies are among the smallest yielding useful Raman signatures for the interface modes. In addition, we have also identified an additional spread of interface phonon modes in the TO range resulting from the superlattice periodicity. The Raman signature contribution from the underlying AlxGa1-xN ternary has also been observed and analyzed. A temperature calibrationwas done based on Stokes/anti-Stokes ratio of A1(LO) using Raman spectroscopy in a broad operating temperature range. As a result, good agreement between the experimental results and theoretically calculated calibration plot predicted using Bose-Einstein statistics was obtained.},
doi = {10.1016/j.spmi.2018.01.021},
journal = {Superlattices and Microstructures},
number = C,
volume = 115,
place = {United States},
year = {Sat Feb 03 00:00:00 EST 2018},
month = {Sat Feb 03 00:00:00 EST 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.spmi.2018.01.021
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: A simple illustration of the superlattice structure used in the implementation of transfer matrix method. The general illustration contains alternating GaN and AlN layers as considered in the simulation.
All figures and tables (5 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Phonon mode behavior in strained wurtzite Al N ∕ Ga N superlattices
journal, March 2005

Raman scattering in thin‐film waveguides
journal, April 1973

  • Burns, G.; Dacol, F.; Marinace, J. C.
  • Applied Physics Letters, Vol. 22, Issue 8
  • DOI: 10.1063/1.1654671

Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice
journal, May 2001

Raman-scattering studies of aluminum nitride at high pressure
journal, February 1993

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
journal, August 1994

  • Morkoç, H.; Strite, S.; Gao, G. B.
  • Journal of Applied Physics, Vol. 76, Issue 3
  • DOI: 10.1063/1.358463

Micro-Raman thermometry in the presence of complex stresses in GaN devices
journal, June 2008

  • Beechem, T.; Christensen, A.; Graham, S.
  • Journal of Applied Physics, Vol. 103, Issue 12
  • DOI: 10.1063/1.2940131

Temperature Dependence of Raman Scattering in Silicon
journal, January 1970

Phonons in III–V nitrides: Confined phonons and interface phonons
journal, October 2001

  • Dutta, M.; Alexson, D.; Bergman, L.
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 11, Issue 2-3
  • DOI: 10.1016/S1386-9477(01)00217-X

Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems
journal, October 1997

  • Yu, SeGi; Kim, K. W.; Stroscio, Michael A.
  • Journal of Applied Physics, Vol. 82, Issue 7
  • DOI: 10.1063/1.365649

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions
journal, May 1998

  • Demangeot, F.; Groenen, J.; Frandon, J.
  • Applied Physics Letters, Vol. 72, Issue 21
  • DOI: 10.1063/1.121095

Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
journal, November 1997

  • Davydov, V. Yu.; Averkiev, N. S.; Goncharuk, I. N.
  • Journal of Applied Physics, Vol. 82, Issue 10
  • DOI: 10.1063/1.366310

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
journal, October 2006

Phonons in a strained hexagonal GaN–AlN superlattice
journal, February 1999

  • Gleize, J.; Demangeot, F.; Frandon, J.
  • Applied Physics Letters, Vol. 74, Issue 5
  • DOI: 10.1063/1.122993

Behavior of phonons in short period GaN‐AlN superlattices
journal, November 2004

  • Pinquier, C.; Frandon, J.; Demangeot, F.
  • physica status solidi (c), Vol. 1, Issue 11
  • DOI: 10.1002/pssc.200405277

Lattice dynamics and Raman spectra of strained hexagonal GaN/AlN and GaN/AlGaN superlattices
journal, November 2003

  • Davydov, V. Yu.; Smirnov, A. N.; Smirnov, M. B.
  • physica status solidi (c), Issue 7
  • DOI: 10.1002/pssc.200303311
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
    journal, October 2018

    Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure
    journal, October 2018

      Sort by:
      [ × clear filter / sort ]

      Figures / Tables found in this record:

      Figure 1 (p. 3)figure
      Figure 2 (p. 5)figure
      Table 1 (p. 6)table
      Figure 3 (p. 7)figure
      Figure 4 (p. 8)figure
        [ × clear filter / sort ]
        Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

        Similar Records in DOE PAGES and OSTI.GOV collections: