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Title: Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

Abstract

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [3];  [2]
  1. Stony Brook Univ., Stony Brook, NY (United States)
  2. Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1437945
Report Number(s):
BNL-205653-2018-JAAM
Journal ID: ISSN 0361-5235
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 46; Journal Issue: 4; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Temperature coefficient of resistance (TCR); Vanadium oxide (VOx); Titanium oxide (TiOx); Atomic layer deposition

Citation Formats

Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, and Zuo, Lei. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications. United States: N. p., 2016. Web. doi:10.1007/s11664-016-5150-9.
Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, & Zuo, Lei. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications. United States. https://doi.org/10.1007/s11664-016-5150-9
Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, and Zuo, Lei. Wed . "Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications". United States. https://doi.org/10.1007/s11664-016-5150-9. https://www.osti.gov/servlets/purl/1437945.
@article{osti_1437945,
title = {Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications},
author = {Wang, Shuyu and Yu, Shifeng and Lu, Ming and Liu, Mingzhao and Zuo, Lei},
abstractNote = {In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.},
doi = {10.1007/s11664-016-5150-9},
journal = {Journal of Electronic Materials},
number = 4,
volume = 46,
place = {United States},
year = {Wed Nov 30 00:00:00 EST 2016},
month = {Wed Nov 30 00:00:00 EST 2016}
}

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