Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications
Abstract
In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.
- Authors:
-
- Stony Brook Univ., Stony Brook, NY (United States)
- Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1437945
- Report Number(s):
- BNL-205653-2018-JAAM
Journal ID: ISSN 0361-5235
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 4; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Temperature coefficient of resistance (TCR); Vanadium oxide (VOx); Titanium oxide (TiOx); Atomic layer deposition
Citation Formats
Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, and Zuo, Lei. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications. United States: N. p., 2016.
Web. doi:10.1007/s11664-016-5150-9.
Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, & Zuo, Lei. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications. United States. https://doi.org/10.1007/s11664-016-5150-9
Wang, Shuyu, Yu, Shifeng, Lu, Ming, Liu, Mingzhao, and Zuo, Lei. Wed .
"Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications". United States. https://doi.org/10.1007/s11664-016-5150-9. https://www.osti.gov/servlets/purl/1437945.
@article{osti_1437945,
title = {Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications},
author = {Wang, Shuyu and Yu, Shifeng and Lu, Ming and Liu, Mingzhao and Zuo, Lei},
abstractNote = {In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.},
doi = {10.1007/s11664-016-5150-9},
journal = {Journal of Electronic Materials},
number = 4,
volume = 46,
place = {United States},
year = {Wed Nov 30 00:00:00 EST 2016},
month = {Wed Nov 30 00:00:00 EST 2016}
}
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