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Title: In situ observation of atomic movement in a ferroelectric film under an external electric field and stress

Abstract

Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscopy, time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO3 film, the hysteresis loop of the reflected X-ray intensity was found to result from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-fieldinduced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. In conclusion, the effect of external stress on the BiFeO3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying anmore » electric field to the film, despite the similar tetragonality.« less

Authors:
 [1]; ORCiD logo [2];  [3];  [1];  [4];  [5];  [3];  [1]
  1. Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Martin-Luther-Univ., Halle (Germany)
  3. Pusan National Univ., Busan (Republic of Korea)
  4. Pohang Accelerator Lab., Pohang (Republic of Korea)
  5. Martin-Luther-Univ., Halle (Germany)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1436924
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nano Research
Additional Journal Information:
Journal Volume: 11; Journal Issue: 7; Journal ID: ISSN 1998-0124
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; in situ measurement; atomic displacement under electric field; time-resolved X-ray microdiffraction; ferroelectrics; in situ strain engineering

Citation Formats

Lee, Hyeon Jun, Guo, Er-Jia, Min, Taewon, Hwang, Seung Hyun, Lee, Su Yong, Dorr, Kathrin, Lee, Jaekwang, and Jo, Ji Young. In situ observation of atomic movement in a ferroelectric film under an external electric field and stress. United States: N. p., 2018. Web. doi:10.1007/s12274-017-1956-x.
Lee, Hyeon Jun, Guo, Er-Jia, Min, Taewon, Hwang, Seung Hyun, Lee, Su Yong, Dorr, Kathrin, Lee, Jaekwang, & Jo, Ji Young. In situ observation of atomic movement in a ferroelectric film under an external electric field and stress. United States. https://doi.org/10.1007/s12274-017-1956-x
Lee, Hyeon Jun, Guo, Er-Jia, Min, Taewon, Hwang, Seung Hyun, Lee, Su Yong, Dorr, Kathrin, Lee, Jaekwang, and Jo, Ji Young. Thu . "In situ observation of atomic movement in a ferroelectric film under an external electric field and stress". United States. https://doi.org/10.1007/s12274-017-1956-x. https://www.osti.gov/servlets/purl/1436924.
@article{osti_1436924,
title = {In situ observation of atomic movement in a ferroelectric film under an external electric field and stress},
author = {Lee, Hyeon Jun and Guo, Er-Jia and Min, Taewon and Hwang, Seung Hyun and Lee, Su Yong and Dorr, Kathrin and Lee, Jaekwang and Jo, Ji Young},
abstractNote = {Atomic movement under application of external stimuli (i.e., electric field or mechanical stress) in oxide materials has not been observed due to a lack of experimental methods but has been well known to determine the electric polarization. Here, we investigated atomic movement arising from the ferroelectric response of BiFeO3 thin films under the effect of an electric field and stress in real time using a combination of switching spectroscopy, time-resolved X-ray microdiffraction, and in situ stress engineering. Under an electric field applied to a BiFeO3 film, the hysteresis loop of the reflected X-ray intensity was found to result from the opposing directions of displaced atoms between the up and down polarization states. An additional shift of atoms arising from the linearly increased dielectric component of the polarization in BiFeO3 was confirmed through gradual reduction of the diffracted X-ray intensity. The electric-fieldinduced displacement of oxygen atoms was found to be larger than that of Fe atom for both ferroelectric switching and increase of the polarization. In conclusion, the effect of external stress on the BiFeO3 thin film, which was controlled by applying an electric field to the highly piezoelectric substrate, showed smaller atomic shifts than for the case of applying an electric field to the film, despite the similar tetragonality.},
doi = {10.1007/s12274-017-1956-x},
journal = {Nano Research},
number = 7,
volume = 11,
place = {United States},
year = {Thu Aug 02 00:00:00 EDT 2018},
month = {Thu Aug 02 00:00:00 EDT 2018}
}

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