Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering
Abstract
In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern-Argonne Inst. of Science and Technology, Evanston, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1433913
- Alternate Identifier(s):
- OSTI ID: 1430774
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 13; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; skyrmions; spin accumulation; spin relaxation
Citation Formats
Zhang, Steven S. -L., and Heinonen, Olle. Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering. United States: N. p., 2018.
Web. doi:10.1103/PhysRevB.97.134401.
Zhang, Steven S. -L., & Heinonen, Olle. Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering. United States. https://doi.org/10.1103/PhysRevB.97.134401
Zhang, Steven S. -L., and Heinonen, Olle. Mon .
"Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering". United States. https://doi.org/10.1103/PhysRevB.97.134401. https://www.osti.gov/servlets/purl/1433913.
@article{osti_1433913,
title = {Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering},
author = {Zhang, Steven S. -L. and Heinonen, Olle},
abstractNote = {In this paper, we study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004)]. Finally, we derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.},
doi = {10.1103/PhysRevB.97.134401},
journal = {Physical Review B},
number = 13,
volume = 97,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2018},
month = {Mon Apr 02 00:00:00 EDT 2018}
}
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Figures / Tables:
FIG. 1: FIG. 1: Schematics of the TH effect in a diffusive ferromagnetic thin film when an external electric field E is applied: (a) The trajectories of spin-up and spin-down electrons traversing a Néel-type skyrmion of radius rsk due to the TH effect, and (b) spin accumulations built up atmore »
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