Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

Gao, Xujiao; Huang, Andy; Kerr, Bert

doi:10.1149/08010.1005ecst

Title: Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

Abstract

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.

Authors:

Gao, Xujiao ^[1]; Huang, Andy ^[1]; Kerr, Bert ^[2]

Sandia National Lab. (SNL-CA), Livermore, CA (United States)
New Mexico Institute of Mining and Technology, Socorro, NM (United States)

Publication Date:: Wed Oct 25 00:00:00 EDT 2017

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1429661

Report Number(s):: SAND-2017-11476J
Journal ID: ISSN 1938-6737; 658063

Grant/Contract Number:: AC04-94AL85000; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: ECS Transactions (Online)

Additional Journal Information:: Journal Name: ECS Transactions (Online); Journal Volume: 80; Journal Issue: 10; Journal ID: ISSN 1938-6737

Publisher:: Electrochemical Society

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Gao, Xujiao, Huang, Andy, and Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset.  United States: N. p., 2017. 
Web.  doi:10.1149/08010.1005ecst.

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                    Gao, Xujiao, Huang, Andy, & Kerr, Bert. Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset.  United States.  https://doi.org/10.1149/08010.1005ecst

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                    Gao, Xujiao, Huang, Andy, and Kerr, Bert. Wed .  
"Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset".  United States.  https://doi.org/10.1149/08010.1005ecst.  https://www.osti.gov/servlets/purl/1429661.

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@article{osti_1429661,

  title        = {Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset},

  author       = {Gao, Xujiao and Huang, Andy and Kerr, Bert},

  abstractNote = {In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.},

  doi          = {10.1149/08010.1005ecst},

  journal      = {ECS Transactions (Online)},

  number       = 10,

  volume       = 80,

  place        = {United States},

  year         = {Wed Oct 25 00:00:00 EDT 2017},

  month        = {Wed Oct 25 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Analytic band-to-trap tunneling model including band offset for heterojunction devices
journal, February 2019

Gao, Xujiao; Kerr, Bert; Huang, Andy
Journal of Applied Physics, Vol. 125, Issue 5
DOI: 10.1063/1.5078685

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Title: Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

Abstract

Citation Formats

Analytic band-to-trap tunneling model including band offset for heterojunction devices journal, February 2019

Analytic band-to-trap tunneling model including band offset for heterojunction devices
journal, February 2019