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Title: Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids

Abstract

We rigorously calculate intrinsic phonon thermal resistance from four-phonon scattering processesusing rst principles Boltzmann transport methods. Fundamental questions concerning the role ofhigher order scattering at high temperature and in systems with otherwise weak intrinsic scatteringare answered. Using diamond and silicon as benchmark materials, the predicted thermal conductiv-ity including intrinsic four-phonon resistance gives signicantly better agreement with measurementsat high temperatures than previous rst principles calculations. In the predicted ultrahigh thermalconductivity material, zincblende BAs, four-phonon scattering is strikingly strong when comparedto three-phonon processes, even at room temperature, as the latter have an extremely limited phasespace for scattering. Including four-phonon thermal resistance reduces the predicted thermal con-ductivity of BAs from 2200 W/m-K to 1400 W/m-K.

Authors:
 [1]; ORCiD logo [2];  [1]
  1. Purdue Univ., West Lafayette, IN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1427696
Alternate Identifier(s):
OSTI ID: 1405214
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Feng, Tianli, Lindsay, Lucas R., and Ruan, Xiulin. Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.161201.
Feng, Tianli, Lindsay, Lucas R., & Ruan, Xiulin. Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids. United States. https://doi.org/10.1103/PhysRevB.96.161201
Feng, Tianli, Lindsay, Lucas R., and Ruan, Xiulin. Fri . "Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids". United States. https://doi.org/10.1103/PhysRevB.96.161201. https://www.osti.gov/servlets/purl/1427696.
@article{osti_1427696,
title = {Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids},
author = {Feng, Tianli and Lindsay, Lucas R. and Ruan, Xiulin},
abstractNote = {We rigorously calculate intrinsic phonon thermal resistance from four-phonon scattering processesusing rst principles Boltzmann transport methods. Fundamental questions concerning the role ofhigher order scattering at high temperature and in systems with otherwise weak intrinsic scatteringare answered. Using diamond and silicon as benchmark materials, the predicted thermal conductiv-ity including intrinsic four-phonon resistance gives signicantly better agreement with measurementsat high temperatures than previous rst principles calculations. In the predicted ultrahigh thermalconductivity material, zincblende BAs, four-phonon scattering is strikingly strong when comparedto three-phonon processes, even at room temperature, as the latter have an extremely limited phasespace for scattering. Including four-phonon thermal resistance reduces the predicted thermal con-ductivity of BAs from 2200 W/m-K to 1400 W/m-K.},
doi = {10.1103/PhysRevB.96.161201},
journal = {Physical Review B},
number = 16,
volume = 96,
place = {United States},
year = {Fri Oct 27 00:00:00 EDT 2017},
month = {Fri Oct 27 00:00:00 EDT 2017}
}

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