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Title: A metal-insulator transition study of VO2 thin films grown on sapphire substrates

Abstract

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.

Authors:
 [1]; ORCiD logo [2];  [3];  [1]
+ Show Author Affiliations
  1. Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Mechanical Engineering
  2. Stony Brook Univ., NY (United States). Dept. of Mechanical Engineering
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
1425083
Report Number(s):
BNL-203255-2018-JAAM
Journal ID: ISSN 0021-8979; TRN: US1802037
Grant/Contract Number:  
SC0012704; IDBR 1152415
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Vanadium Oxide; Metal Insulator transition; supptering deposition

Citation Formats

Yu, Shifeng, Wang, Shuyu, Lu, Ming, and Zuo, Lei. A metal-insulator transition study of VO2 thin films grown on sapphire substrates. United States: N. p., 2017. Web. doi:10.1063/1.4997437.
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Yu, Shifeng, Wang, Shuyu, Lu, Ming, & Zuo, Lei. A metal-insulator transition study of VO2 thin films grown on sapphire substrates. United States. https://doi.org/10.1063/1.4997437
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Yu, Shifeng, Wang, Shuyu, Lu, Ming, and Zuo, Lei. Fri . "A metal-insulator transition study of VO2 thin films grown on sapphire substrates". United States. https://doi.org/10.1063/1.4997437. https://www.osti.gov/servlets/purl/1425083.
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@article{osti_1425083,
title = {A metal-insulator transition study of VO2 thin films grown on sapphire substrates},
author = {Yu, Shifeng and Wang, Shuyu and Lu, Ming and Zuo, Lei},
abstractNote = {In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.},
doi = {10.1063/1.4997437},
journal = {Journal of Applied Physics},
number = 23,
volume = 122,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4997437
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Cited by: 27 works
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Figures / Tables:

Figure 1 Figure 1: (a) The relationship between the oxygen flow rate and the pressure inside the tube of the furnace. (b) The resistivity VS temperature curves for VO2 thin film (sample AII in Table 1) with different scanning rates. The inset shows the measured amplitude of the TCR ( -$\frac{1}{ρ}$($\frac{dρ}{dT}$)). Tmmore » is the transition temperature at which the vanadium oxide undergoes abrupt change in resistivity. It is determined by the largest TCR amplitude.« less
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    Works referencing / citing this record:

    Synthesis of phase pure vanadium dioxide (VO 2 ) thin film by reactive pulsed laser deposition
    journal, October 2018

    • Bhardwaj, Devanshi; Goswami, Ankur; Umarji, A. M.
    • Journal of Applied Physics, Vol. 124, Issue 13
    • DOI: 10.1063/1.5046455

    Asymmetric hysteresis in vanadium dioxide thin films
    journal, January 2019

    • Currie, Marc; Wheeler, Virginia D.; Downey, Brian
    • Optical Materials Express, Vol. 9, Issue 9
    • DOI: 10.1364/ome.9.003717
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