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Title: Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

Abstract

III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.

Authors:
ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of Oregon, Eugene, OR (United States). Dept. of Chemistry and Biochemistry
  2. Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
Publication Date:
Research Org.:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1418849
Grant/Contract Number:  
EE0007361; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
ACS Energy Letters
Additional Journal Information:
Journal Volume: 2; Journal Issue: 10; Journal ID: ISSN 2380-8195
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., and Boettcher, Shannon W. Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications. United States: N. p., 2017. Web. doi:10.1021/acsenergylett.7b00633.
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Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., & Boettcher, Shannon W. Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications. United States. https://doi.org/10.1021/acsenergylett.7b00633
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Greenaway, Ann L., Boucher, Jason W., Oener, Sebastian Z., Funch, Christopher J., and Boettcher, Shannon W. Thu . "Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications". United States. https://doi.org/10.1021/acsenergylett.7b00633. https://www.osti.gov/servlets/purl/1418849.
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@article{osti_1418849,
title = {Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications},
author = {Greenaway, Ann L. and Boucher, Jason W. and Oener, Sebastian Z. and Funch, Christopher J. and Boettcher, Shannon W.},
abstractNote = {III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.},
doi = {10.1021/acsenergylett.7b00633},
journal = {ACS Energy Letters},
number = 10,
volume = 2,
place = {United States},
year = {Thu Aug 31 00:00:00 EDT 2017},
month = {Thu Aug 31 00:00:00 EDT 2017}
}
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https://doi.org/10.1021/acsenergylett.7b00633
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  • Journal of The Electrochemical Society, Vol. 161, Issue 14
  • DOI: 10.1149/2.0821414jes

III–V Ternary bulk substrate growth technology: a review
journal, February 2005

Engineering controlled spalling in (100)-oriented GaAs for wafer reuse
conference, June 2015

  • Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian
  • 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC), 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
  • DOI: 10.1109/PVSC.2015.7356070

The capital intensity of photovoltaics manufacturing: barrier to scale and opportunity for innovation
journal, January 2015

  • Powell, Douglas M.; Fu, Ran; Horowitz, Kelsey
  • Energy & Environmental Science, Vol. 8, Issue 12
  • DOI: 10.1039/C5EE01509J

Transforming the cost of solar-to-electrical energy conversion: Integrating thin-film GaAs solar cells with non-tracking mini-concentrators
journal, May 2015

  • Lee, Kyusang; Lee, Jaesang; Mazor, Bryan A.
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  • DOI: 10.1038/lsa.2015.61

Materials Availability Expands the Opportunity for Large-Scale Photovoltaics Deployment
journal, March 2009

  • Wadia, Cyrus; Alivisatos, A. Paul; Kammen, Daniel M.
  • Environmental Science & Technology, Vol. 43, Issue 6
  • DOI: 10.1021/es8019534
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