Gate Tuning of Electronic Phase Transitions in Two-Dimensional
Abstract
Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. We demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal by an ionic liquid gate. A variation up to in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D . The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.
- Authors:
-
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Physics. Center for 2-Dimensional and Layered Materials
- Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland). Inst. of Condensed Matter Physics
- Publication Date:
- Research Org.:
- Pennsylvania State Univ., University Park, PA (United States); Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzerland)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Swiss National Science Foundation (SNSF)
- OSTI Identifier:
- 1418619
- Alternate Identifier(s):
- OSTI ID: 1310836
- Grant/Contract Number:
- SC0012635; SC0013883; DMR-1645901; DMR-1410407; FA9550-16-1-0249
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 10; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; charge density waves; magnetotransport; 2-dimensional systems; transition-metal dichalcogenide
Citation Formats
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2. United States: N. p., 2016.
Web. doi:10.1103/PhysRevLett.117.106801.
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, & Mak, Kin Fai. Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2. United States. https://doi.org/10.1103/PhysRevLett.117.106801
Xi, Xiaoxiang, Berger, Helmuth, Forró, László, Shan, Jie, and Mak, Kin Fai. Mon .
"Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2". United States. https://doi.org/10.1103/PhysRevLett.117.106801. https://www.osti.gov/servlets/purl/1418619.
@article{osti_1418619,
title = {Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe2},
author = {Xi, Xiaoxiang and Berger, Helmuth and Forró, László and Shan, Jie and Mak, Kin Fai},
abstractNote = {Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. We demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe2 by an ionic liquid gate. A variation up to ~50% in the superconducting transition temperature has been observed. Both superconductivity and CDW order can be strengthened (weakened) by increasing (reducing) the carrier density in 2D NbSe2. The doping dependence of these phase transitions can be understood as driven by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.},
doi = {10.1103/PhysRevLett.117.106801},
journal = {Physical Review Letters},
number = 10,
volume = 117,
place = {United States},
year = {Mon Aug 29 00:00:00 EDT 2016},
month = {Mon Aug 29 00:00:00 EDT 2016}
}
Web of Science
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