Moving towards the magnetoelectric graphene transistor
Abstract
Here, the interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.
- Authors:
-
[1];
[1];
[1];
[1]
- Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)
- Univ. at Buffalo, The State Uni. of New York, Buffalo, NY (United States)
- Univ. of Science and Technology of China, Anhui (China)
- Univ. at Buffalo, The State Univ. of New York, Buffalo, NY (United States)
- Univ. of Nebraska at Omaha, Omaha, NE (United States)
- Publication Date:
- Research Org.:
- Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1406295
- Alternate Identifier(s):
- OSTI ID: 1406386
- Grant/Contract Number:
- SC0016153
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 18; Related Information: http://cdn.scitation.org/journals/content/apl/2017/apl.2017.111.issue-18/1.4999643/20171101/suppl/supplementary%20marterialsv2.pdf?b92b4ad1b4f274c70877518610abb28bd756756a6161842cd52fd8f52e9eae516dc5ee147b8bce65758738b212fba58380ff0f8a9d6c7531ed9e0a54fbc248f7f7604325d1c3e31b8c2ffec948b4aab1951645fa835584d08a19fdb68f38427c9cddcd0c898ac29899234e4f5d1575cc584dfec97383ae628335601020a6ce1b4f518a63b14f4d965b517f5ee119d6383fbd0af0e5b5c60ca58b; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; graphene; Cr2O3; magnetoelectric; interfacial charge transfer; scanning probe microscopy
Citation Formats
Cao, Shi, Xiao, Zhiyong, Kwan, Chun -Pui, Zhang, Kai, Bird, Jonathan P., Wang, Lu, Mei, Wai -Ning, Hong, Xia, and Dowben, P. A. Moving towards the magnetoelectric graphene transistor. United States: N. p., 2017.
Web. doi:10.1063/1.4999643.
Cao, Shi, Xiao, Zhiyong, Kwan, Chun -Pui, Zhang, Kai, Bird, Jonathan P., Wang, Lu, Mei, Wai -Ning, Hong, Xia, & Dowben, P. A. Moving towards the magnetoelectric graphene transistor. United States. https://doi.org/10.1063/1.4999643
Cao, Shi, Xiao, Zhiyong, Kwan, Chun -Pui, Zhang, Kai, Bird, Jonathan P., Wang, Lu, Mei, Wai -Ning, Hong, Xia, and Dowben, P. A. Mon .
"Moving towards the magnetoelectric graphene transistor". United States. https://doi.org/10.1063/1.4999643. https://www.osti.gov/servlets/purl/1406295.
@article{osti_1406295,
title = {Moving towards the magnetoelectric graphene transistor},
author = {Cao, Shi and Xiao, Zhiyong and Kwan, Chun -Pui and Zhang, Kai and Bird, Jonathan P. and Wang, Lu and Mei, Wai -Ning and Hong, Xia and Dowben, P. A.},
abstractNote = {Here, the interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr2O3 (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.},
doi = {10.1063/1.4999643},
journal = {Applied Physics Letters},
number = 18,
volume = 111,
place = {United States},
year = {Mon Oct 30 00:00:00 EDT 2017},
month = {Mon Oct 30 00:00:00 EDT 2017}
}
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