Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer
Abstract
Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height ΦeffΒ varies from 0.38 eV to 0.57 eV and is tunabe by a SiO2 global back-gate, while the tuning range of ΦeffΒ the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.
- Authors:
-
- Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
- Arizona State Univ., Tempe, AZ (United States)
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1400412
- Alternate Identifier(s):
- OSTI ID: 1372585
- Grant/Contract Number:
- SC0016153
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 23; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; P(VDF-TrFE); ferroelectric field effect; Schottky junction; scanning probe microscopy; ferroelectric domain
Citation Formats
Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, and Hong, Xia. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2. United States: N. p., 2017.
Web. doi:10.1103/PhysRevLett.118.236801.
Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, & Hong, Xia. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2. United States. https://doi.org/10.1103/PhysRevLett.118.236801
Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, and Hong, Xia. Thu .
"Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2". United States. https://doi.org/10.1103/PhysRevLett.118.236801. https://www.osti.gov/servlets/purl/1400412.
@article{osti_1400412,
title = {Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2},
author = {Xiao, Zhiyong and Song, Jingfeng and Ferry, David K. and Ducharme, Stephen and Hong, Xia},
abstractNote = {Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height ΦeffΒ varies from 0.38 eV to 0.57 eV and is tunabe by a SiO2 global back-gate, while the tuning range of ΦeffΒ the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.},
doi = {10.1103/PhysRevLett.118.236801},
journal = {Physical Review Letters},
number = 23,
volume = 118,
place = {United States},
year = {Thu Jun 08 00:00:00 EDT 2017},
month = {Thu Jun 08 00:00:00 EDT 2017}
}
Web of Science
Works referenced in this record:
Light-emitting diodes by band-structure engineering in van der Waals heterostructures
journal, February 2015
- Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.
- Nature Materials, Vol. 14, Issue 3
Polarized Raman spectra and LO-TO splitting of poly(vinylidene fluoride) crystal form I
journal, December 1985
- Tashiro, Kohji; Itoh, Yuzo; Kobayashi, Masamichi
- Macromolecules, Vol. 18, Issue 12
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
journal, October 2014
- Koppens, F. H. L.; Mueller, T.; Avouris, Ph.
- Nature Nanotechnology, Vol. 9, Issue 10
Mono- and Bilayer WS 2 Light-Emitting Transistors
journal, March 2014
- Jo, Sanghyun; Ubrig, Nicolas; Berger, Helmuth
- Nano Letters, Vol. 14, Issue 4
Spatial Control of Photoluminescence at Room Temperature by Ferroelectric Domains in Monolayer WS 2 /PZT Hybrid Structures
journal, December 2016
- Li, Connie H.; McCreary, Kathleen M.; Jonker, Berend T.
- ACS Omega, Vol. 1, Issue 6
Gate-modulated conductance of few-layer WSe 2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
journal, April 2015
- Wang, Junjie; Rhodes, Daniel; Feng, Simin
- Applied Physics Letters, Vol. 106, Issue 15
Examining Graphene Field Effect Sensors for Ferroelectric Thin Film Studies
journal, August 2013
- Rajapitamahuni, A.; Hoffman, J.; Ahn, C. H.
- Nano Letters, Vol. 13, Issue 9
Effect of thermal annealing on ferroelectric domain structures in poly(vinylidene-fluoride-trifluorethylene) Langmuir-Blodgett thin films
journal, August 2014
- Xiao, Z.; Hamblin, J.; Poddar, Shashi
- Journal of Applied Physics, Vol. 116, Issue 6
Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2
journal, March 2010
- Lee, Changgu; Yan, Hugen; Brus, Louis E.
- ACS Nano, Vol. 4, Issue 5
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS 2 stack
journal, October 2013
- Park, Woojin; Yang, Jin Ho; Kang, Chang Goo
- Nanotechnology, Vol. 24, Issue 47
Emerging Photoluminescence in Monolayer MoS2
journal, April 2010
- Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
- Nano Letters, Vol. 10, Issue 4, p. 1271-1275
Van der Waals heterostructures
journal, July 2013
- Geim, A. K.; Grigorieva, I. V.
- Nature, Vol. 499, Issue 7459, p. 419-425
Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations
journal, February 2016
- Hong, Xia
- Journal of Physics: Condensed Matter, Vol. 28, Issue 10
Black Phosphorus–Monolayer MoS 2 van der Waals Heterojunction p–n Diode
journal, July 2014
- Deng, Yexin; Luo, Zhe; Conrad, Nathan J.
- ACS Nano, Vol. 8, Issue 8
Suspended single-layer MoS 2 devices
journal, October 2013
- Jin, Taiyu; Kang, Jinyeong; Su Kim, Eok
- Journal of Applied Physics, Vol. 114, Issue 16
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012
- Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
- Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
How Good Can Monolayer MoS 2 Transistors Be?
journal, September 2011
- Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef
- Nano Letters, Vol. 11, Issue 9
Charge Scattering and Mobility in Atomically Thin Semiconductors
journal, March 2014
- Ma, Nan; Jena, Debdeep
- Physical Review X, Vol. 4, Issue 1
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014
- Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
- Nature Nanotechnology, Vol. 9, Issue 4
MoS 2 P-type Transistors and Diodes Enabled by High Work Function MoO x Contacts
journal, February 2014
- Chuang, Steven; Battaglia, Corsin; Azcatl, Angelica
- Nano Letters, Vol. 14, Issue 3
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
journal, January 2014
- Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J.
- ACS Nano, Vol. 8, Issue 2
Toward Ferroelectric Control of Monolayer MoS 2
journal, April 2015
- Nguyen, Ariana; Sharma, Pankaj; Scott, Thomas
- Nano Letters, Vol. 15, Issue 5
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
journal, January 2014
- Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien
- Nature Communications, Vol. 5, Issue 1
Tuning and Persistent Switching of Graphene Plasmons on a Ferroelectric Substrate
journal, July 2015
- Goldflam, Michael D.; Ni, Guang-Xin; Post, Kirk W.
- Nano Letters, Vol. 15, Issue 8
Measurement of mobility in dual-gated MoS2 transistors
journal, March 2013
- Fuhrer, Michael S.; Hone, James
- Nature Nanotechnology, Vol. 8, Issue 3
Phonon-limited mobility in -type single-layer MoS from first principles
journal, March 2012
- Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.
- Physical Review B, Vol. 85, Issue 11
Tuning the Effective Fine Structure Constant in Graphene: Opposing Effects of Dielectric Screening on Short- and Long-Range Potential Scattering
journal, October 2008
- Jang, C.; Adam, S.; Chen, J. -H.
- Physical Review Letters, Vol. 101, Issue 14
Deposition of High-Quality on Graphene and the Effect of Remote Oxide Phonon Scattering
journal, September 2010
- Zou, K.; Hong, X.; Keefer, D.
- Physical Review Letters, Vol. 105, Issue 12
Two-dimensional atomic crystals
journal, July 2005
- Novoselov, K. S.; Jiang, D.; Schedin, F.
- Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers
journal, September 2013
- Xiao, Z.; Poddar, Shashi; Ducharme, Stephen
- Applied Physics Letters, Vol. 103, Issue 11
Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions
journal, August 2014
- Kunc, Jan; Hu, Yike; Palmer, James
- Nano Letters, Vol. 14, Issue 9
Single-Layer MoS2 Phototransistors
journal, December 2011
- Yin, Zongyou; Li, Hai; Li, Hong
- ACS Nano, Vol. 6, Issue 1, p. 74-80
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
journal, November 2001
- Fischetti, Massimo V.; Neumayer, Deborah A.; Cartier, Eduard A.
- Journal of Applied Physics, Vol. 90, Issue 9
Ferroelectric tunnel junctions with graphene electrodes
journal, November 2014
- Lu, H.; Lipatov, A.; Ryu, S.
- Nature Communications, Vol. 5, Issue 1
Symmetry-dependent phonon renormalization in monolayer MoS transistor
journal, April 2012
- Chakraborty, Biswanath; Bera, Achintya; Muthu, D. V. S.
- Physical Review B, Vol. 85, Issue 16
Determination of the optical dispersion in ferroelectric vinylidene fluoride (70%)/trifluoroethylene (30%) copolymer Langmuir–Blodgett films
journal, April 2004
- Bai, Mengjun; Sorokin, A. V.; Thompson, Daniel W.
- Journal of Applied Physics, Vol. 95, Issue 7
Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe 2 Device
journal, September 2014
- Groenendijk, Dirk J.; Buscema, Michele; Steele, Gary A.
- Nano Letters, Vol. 14, Issue 10
Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS 2 and ultra high-k gate dielectric PZT
journal, January 2015
- Zhou, Changjian; Wang, Xinsheng; Raju, Salahuddin
- Nanoscale, Vol. 7, Issue 19
Single-layer MoS2 transistors
journal, January 2011
- Radisavljevic, B.; Radenovic, A.; Brivio, J.
- Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
Optoelectrical Molybdenum Disulfide (MoS 2 )—Ferroelectric Memories
journal, July 2015
- Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei
- ACS Nano, Vol. 9, Issue 8
Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014
- Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
- Nature Nanotechnology, Vol. 9, Issue 9
MoS 2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel
journal, July 2012
- Lee, Hee Sung; Min, Sung-Wook; Park, Min Kyu
- Small, Vol. 8, Issue 20
Ultrasensitive and Broadband MoS 2 Photodetector Driven by Ferroelectrics
journal, September 2015
- Wang, Xudong; Wang, Peng; Wang, Jianlu
- Advanced Materials, Vol. 27, Issue 42
Detangling extrinsic and intrinsic hysteresis for detecting dynamic switch of electric dipoles using graphene field-effect transistors on ferroelectric gates
journal, January 2015
- Ma, Chunrui; Gong, Youpin; Lu, Rongtao
- Nanoscale, Vol. 7, Issue 44
The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
text, January 2009
- Zou, Ke; Hong, Xia; Keefer, Derek
- arXiv
Anomalous Lattice Vibrations of Single and Few-Layer MoS2
text, January 2010
- Lee, Changgu; Yan, Hugen; Brus, Louis E.
- arXiv
Measurement of mobility in dual-gated MoS2 transistors
text, January 2013
- Fuhrer, Michael S.; Hone, James
- arXiv
Mobility engineering and metal-insulator transition in monolayer MoS2
text, January 2013
- Radisavljevic, Branimir; Kis, Andras
- arXiv
Charge Scattering and Mobility in Atomically Thin Semiconductors
text, January 2013
- Ma, Nan; Jena, Debdeep
- arXiv
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
text, January 2014
- Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J.
- arXiv
Mono- and Bilayer WS2 Light-Emitting Transistors
text, January 2014
- Jo, Sanghyun; Ubrig, Nicolas; Berger, Helmuth
- arXiv
Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
text, January 2014
- Deng, Yexin; Luo, Zhe; Conrad, Nathan J.
- arXiv
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
text, January 2014
- Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.
- arXiv
Works referencing / citing this record:
Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
journal, July 2019
- Lv, Liang; Zhuge, Fuwei; Xie, Fengjun
- Nature Communications, Vol. 10, Issue 1
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
journal, January 2020
- Wu, Guangjian; Tian, Bobo; Liu, Lan
- Nature Electronics, Vol. 3, Issue 1
Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS 2 transistor
journal, January 2018
- Lu, Zhongyuan; Serrao, Claudy; Khan, Asif I.
- Applied Physics Letters, Vol. 112, Issue 4
Temperature behavior of graphene conductance induced by piezoelectric effect in a ferroelectric substrate
journal, August 2018
- Morozovska, Anna N.; Kurchak, Anatolii I.; Zemska, Zhanna G.
- Journal of Applied Physics, Vol. 124, Issue 8
Thickness dependence of domain size in 2D ferroelectric CuInP 2 S 6 nanoflakes
journal, November 2019
- Chen, Liufang; Li, Yongqiang; Li, Chuanfu
- AIP Advances, Vol. 9, Issue 11
Graphene Exfoliation at a Ferroelectric Domain Wall Induced by the Piezoelectric Effect: Impact on the Conductance of the Graphene Channel
journal, November 2017
- Morozovska, Anna N.; Kurchak, Anatolii I.; Strikha, Maksym V.
- Physical Review Applied, Vol. 8, Issue 5