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Title: Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

Abstract

Here, we present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.

Authors:
 [1];  [1];  [2]; ORCiD logo [3];  [3];  [1];  [2];  [3];  [1]
+ Show Author Affiliations
  1. Univ. of Texas, Arlington, TX (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1398193
Alternate Identifier(s):
OSTI ID: 1377670
Report Number(s):
PNNL-SA-126528
Journal ID: ISSN 0021-8979; 49306; KC0203020
Grant/Contract Number:  
AC05-76RL01830; 10122
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; Environmental Molecular Sciences Laboratory

Citation Formats

Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., and Ngai, J. H. Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001). United States: N. p., 2017. Web. doi:10.1063/1.5000142.
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Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., & Ngai, J. H. Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001). United States. https://doi.org/10.1063/1.5000142
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Lim, Z. H., Ahmadi-Majlan, K., Grimley, E. D., Du, Y., Bowden, M., Moghadam, R., LeBeau, J. M., Chambers, S. A., and Ngai, J. H. Mon . "Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)". United States. https://doi.org/10.1063/1.5000142. https://www.osti.gov/servlets/purl/1398193.
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@article{osti_1398193,
title = {Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)},
author = {Lim, Z. H. and Ahmadi-Majlan, K. and Grimley, E. D. and Du, Y. and Bowden, M. and Moghadam, R. and LeBeau, J. M. and Chambers, S. A. and Ngai, J. H.},
abstractNote = {Here, we present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 ºC in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.65 eV, respectively. As a standalone film, SrZrO3 exhibits several characteristics that are ideal for applications as a gate dielectric on Ge. We find that 4 nm thick films exhibit low leakage current densities, and a dielectric constant of κ ~ 25 that corresponds to an equivalent oxide thickness of 0.70 nm.},
doi = {10.1063/1.5000142},
journal = {Journal of Applied Physics},
number = 8,
volume = 122,
place = {United States},
year = {Mon Aug 28 00:00:00 EDT 2017},
month = {Mon Aug 28 00:00:00 EDT 2017}
}
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https://doi.org/10.1063/1.5000142
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Works referenced in this record:

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

  • Ji, Li; McDaniel, Martin D.; Wang, Shijun
  • Nature Nanotechnology, Vol. 10, Issue 1
  • DOI: 10.1038/nnano.2014.277

Epitaxial integration of perovskite-based multifunctional oxides on silicon
journal, May 2013

Growth of SrTiO 3 on Si(001) by hybrid molecular beam epitaxy : Growth of SrTiO
journal, September 2014

  • Zhang, Lei; Engel-Herbert, Roman
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 11
  • DOI: 10.1002/pssr.201409383

Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
journal, April 2009

  • Brooks, C. M.; Kourkoutis, L. Fitting; Heeg, T.
  • Applied Physics Letters, Vol. 94, Issue 16
  • DOI: 10.1063/1.3117365

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic
journal, January 2017

  • Kornblum, L.; Fenning, D. P.; Faucher, J.
  • Energy & Environmental Science, Vol. 10, Issue 1
  • DOI: 10.1039/C6EE03170F

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
journal, February 2008

  • Martens, Koen; Chui, Chi On; Brammertz, Guy
  • IEEE Transactions on Electron Devices, Vol. 55, Issue 2
  • DOI: 10.1109/TED.2007.912365

Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
journal, August 2002

  • Chi On Chui, ; Ramanathan, S.; Triplett, B. B.
  • IEEE Electron Device Letters, Vol. 23, Issue 8
  • DOI: 10.1109/LED.2002.801319

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices
journal, February 2016

  • Hu, Chengqing; McDaniel, Martin D.; Jiang, Aiting
  • ACS Applied Materials & Interfaces, Vol. 8, Issue 8
  • DOI: 10.1021/acsami.5b10661

Ferroelectric Field Effect Transistors for Memory Applications
journal, April 2010

  • Hoffman, Jason; Pan, Xiao; Reiner, James W.
  • Advanced Materials, Vol. 22, Issue 26-27
  • DOI: 10.1002/adma.200904327

Transport at the Epitaxial Interface between Germanium and Functional Oxides
journal, October 2015

  • Kornblum, Lior; Morales-Acosta, Mayra D.; Jin, Eric N.
  • Advanced Materials Interfaces, Vol. 2, Issue 18
  • DOI: 10.1002/admi.201500193

Surface and interface chemical composition of thin epitaxial SrTiO3 and BaTiO3 films: Photoemission investigation
journal, August 2004

  • Amy, F.; Wan, A.; Kahn, A.
  • Journal of Applied Physics, Vol. 96, Issue 3
  • DOI: 10.1063/1.1765855

Zintl layer formation during perovskite atomic layer deposition on Ge (001)
journal, February 2017

  • Hu, Shen; Lin, Edward L.; Hamze, Ali K.
  • The Journal of Chemical Physics, Vol. 146, Issue 5
  • DOI: 10.1063/1.4972071

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

  • Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan
  • Advanced Materials Interfaces, Vol. 2, Issue 4
  • DOI: 10.1002/admi.201400497

Crystal Structures and Phase Transitions in the SrTiO3–SrZrO3 Solid Solution
journal, February 2001

  • Wong, Tony Kam-Yuen; Kennedy, Brendan J.; Howard, Christopher J.
  • Journal of Solid State Chemistry, Vol. 156, Issue 2
  • DOI: 10.1006/jssc.2000.8896

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
journal, February 2010

  • Swaminathan, Shankar; Shandalov, Michael; Oshima, Yasuhiro
  • Applied Physics Letters, Vol. 96, Issue 8
  • DOI: 10.1063/1.3313946

The effects of core-level broadening in determining band alignment at the epitaxial SrTiO 3 (001)/ p -Ge(001) heterojunction
journal, February 2017

  • Chambers, Scott A.; Du, Yingge; Comes, Ryan B.
  • Applied Physics Letters, Vol. 110, Issue 8
  • DOI: 10.1063/1.4977422

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

  • Chambers, S. A.; Liang, Y.; Yu, Z.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
  • DOI: 10.1116/1.1365132

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

  • Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.
  • Journal of Materials Research, Vol. 32, Issue 2
  • DOI: 10.1557/jmr.2016.496

Band offsets at the epitaxial SrTiO 3 /SrZrO 3 (0 0 1) heterojunction
journal, January 2012

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

  • Rossel, C.; Mereu, B.; Marchiori, C.
  • Applied Physics Letters, Vol. 89, Issue 5
  • DOI: 10.1063/1.2236464

Electronic structure of clean and hydrogen-chemisorbed Ge(001) surfaces studied by photoelectron spectroscopy
journal, June 1994

Preparation of a clean Ge(001) surface using oxygen plasma cleaning
journal, May 2013

  • Ponath, Patrick; Posadas, Agham B.; Hatch, Richard C.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
  • DOI: 10.1116/1.4798390

Atomic layer deposition of crystalline SrHfO 3 directly on Ge (001) for high- k dielectric applications
journal, February 2015

  • McDaniel, Martin D.; Hu, Chengqing; Lu, Sirong
  • Journal of Applied Physics, Vol. 117, Issue 5
  • DOI: 10.1063/1.4906953

Correlated Oxide Physics and Electronics
journal, July 2014

Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal
journal, January 2015

  • Shen, Xuan; Ahmadi-Majlan, K.; Ngai, Joseph H.
  • Applied Physics Letters, Vol. 106, Issue 3
  • DOI: 10.1063/1.4906430
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    Works referencing / citing this record:

    Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
    journal, July 2019

    Crystalline SrZrO 3 deposition on Ge (001) by atomic layer deposition for high- k dielectric applications
    journal, July 2018

    • Hu, Shen; Ji, Li; Chen, Pei-Yu
    • Journal of Applied Physics, Vol. 124, Issue 4
    • DOI: 10.1063/1.5026790

    Interfacial structure of SrZr x Ti 1− x O 3 films on Ge
    journal, November 2018

    • Chen, Tongjie; Ahmadi-Majlan, Kamyar; Lim, Zheng Hui
    • Applied Physics Letters, Vol. 113, Issue 20
    • DOI: 10.1063/1.5046394

    Interfacial Structure of SrZr$_{x}$Ti$_{1-x}$O$_3$ films on Ge
    text, January 2018

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