Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy
Abstract
Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.
- Authors:
-
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research; Northeastern Univ., Boston, MA (United States). Dept. of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Northeastern Univ., Boston, MA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1377595
- Alternate Identifier(s):
- OSTI ID: 1330592
- Grant/Contract Number:
- AC02-06CH11357; AC02-98CH10886; ECCS-1402738
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetic moments; Magnetic films; X-ray diffraction; Phase segregation; Magnetic annealing
Citation Formats
Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, and Heiman, Don. Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy. United States: N. p., 2016.
Web. doi:10.1063/1.4966634.
Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, & Heiman, Don. Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.4966634
Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, and Heiman, Don. Mon .
"Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.4966634. https://www.osti.gov/servlets/purl/1377595.
@article{osti_1377595,
title = {Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy},
author = {Jamer, Michelle E. and Sterbinsky, George E. and Stephen, Gregory M. and DeCapua, Matthew C. and Player, Gabriel and Heiman, Don},
abstractNote = {Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.},
doi = {10.1063/1.4966634},
journal = {Applied Physics Letters},
number = 18,
volume = 109,
place = {United States},
year = {Mon Oct 31 00:00:00 EDT 2016},
month = {Mon Oct 31 00:00:00 EDT 2016}
}
Web of Science
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