Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition
Abstract
Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation ofmore »
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
- Northeastern Univ., Boston, MA (United States). Dept. of Physics; Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Physics and Applications-11
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of California, San Diego, CA (United States). Dept. of Electrical and Computer Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Northeastern Univ., Boston, MA (United States). Dept. of Physics
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Physics and Applications-11
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1375868
- Report Number(s):
- LA-UR-16-22544
Journal ID: ISSN 2040-3364; NANOHL
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nanoscale
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 44; Journal ID: ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Lin, Yung-Chen, Bilgin, Ismail, Ahmed, Towfiq, Chen, Renjie, Pete, Doug, Kar, Swastik, Zhu, Jian-Xin, Gupta, Gautam, Mohite, Aditya, and Yoo, Jinkyoung. Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition. United States: N. p., 2016.
Web. doi:10.1039/C6NR03621J.
Lin, Yung-Chen, Bilgin, Ismail, Ahmed, Towfiq, Chen, Renjie, Pete, Doug, Kar, Swastik, Zhu, Jian-Xin, Gupta, Gautam, Mohite, Aditya, & Yoo, Jinkyoung. Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition. United States. https://doi.org/10.1039/C6NR03621J
Lin, Yung-Chen, Bilgin, Ismail, Ahmed, Towfiq, Chen, Renjie, Pete, Doug, Kar, Swastik, Zhu, Jian-Xin, Gupta, Gautam, Mohite, Aditya, and Yoo, Jinkyoung. Wed .
"Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition". United States. https://doi.org/10.1039/C6NR03621J. https://www.osti.gov/servlets/purl/1375868.
@article{osti_1375868,
title = {Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition},
author = {Lin, Yung-Chen and Bilgin, Ismail and Ahmed, Towfiq and Chen, Renjie and Pete, Doug and Kar, Swastik and Zhu, Jian-Xin and Gupta, Gautam and Mohite, Aditya and Yoo, Jinkyoung},
abstractNote = {Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also we report a novel heterostructure composed of Ge and monolayer MoS2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS2. The electrical characteristics of Ge and MoS2 in the Ge/MoS2 heterostructure were remarkably different from those of isolated Ge and MoS2. The field-effect conductivity type of the monolayer MoS2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.},
doi = {10.1039/C6NR03621J},
journal = {Nanoscale},
number = 44,
volume = 8,
place = {United States},
year = {Wed Sep 21 00:00:00 EDT 2016},
month = {Wed Sep 21 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors
journal, January 2016
- Simanullang, Marolop; Wisna, G. Bimananda M.; Usami, Koichi
- Journal of Materials Chemistry C, Vol. 4, Issue 22
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
journal, August 2012
- Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola
- Nature, Vol. 488, Issue 7413, p. 627-632
Strongly bound excitons in gapless two-dimensional structures
journal, September 2014
- Liang, Yufeng; Soklaski, Ryan; Huang, Shouting
- Physical Review B, Vol. 90, Issue 11
Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy
journal, March 2014
- Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
- Advanced Materials, Vol. 26, Issue 22
Artificially Stacked Atomic Layers: Toward New van der Waals Solids
journal, June 2012
- Gao, Guanhui; Gao, Wei; Cannuccia, E.
- Nano Letters, Vol. 12, Issue 7
Exceptional Charge Transport Properties of Graphene on Germanium
journal, September 2014
- Cavallo, Francesca; Rojas Delgado, Richard; Kelly, Michelle M.
- ACS Nano, Vol. 8, Issue 10
Deposition of the layered semiconductor SnS2 onto H-terminated Si(111) surfaces: failure of van der Waals epitaxy and possible implications
journal, November 2004
- Islam, A. B. M. O.; Thissen, A.; Klein, A.
- Surface Science, Vol. 572, Issue 2-3
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014
- Lee, J.-H.; Lee, E. K.; Joo, W.-J.
- Science, Vol. 344, Issue 6181, p. 286-289
Chalcogens in germanium
journal, April 1988
- Grimmeiss, H. G.; Montelius, L.; Larsson, K.
- Physical Review B, Vol. 37, Issue 12
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014
- Fang, H.; Battaglia, C.; Carraro, C.
- Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
Near-ideal electrical properties of InAs/WSe 2 van der Waals heterojunction diodes
journal, June 2013
- Chuang, Steven; Kapadia, Rehan; Fang, Hui
- Applied Physics Letters, Vol. 102, Issue 24
The early history of the high electron mobility transistor (HEMT)
journal, March 2002
- Mimura, T.
- IEEE Transactions on Microwave Theory and Techniques, Vol. 50, Issue 3
Relative Influence of Surface States and Bulk Impurities on the Electrical Properties of Ge Nanowires
journal, September 2009
- Zhang, Shixiong; Hemesath, Eric R.; Perea, Daniel E.
- Nano Letters, Vol. 9, Issue 9
van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
journal, February 2012
- Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping
- Nano Letters, Vol. 12, Issue 3
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
journal, July 2012
- Haigh, S. J.; Gholinia, A.; Jalil, R.
- Nature Materials, Vol. 11, Issue 9
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
journal, February 2016
- Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe
- ACS Nano, Vol. 10, Issue 3
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014
- Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
- Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
journal, August 2014
- Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana
- Advanced Functional Materials, Vol. 24, Issue 42
Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality
journal, August 2015
- Bilgin, Ismail; Liu, Fangze; Vargas, Anthony
- ACS Nano, Vol. 9, Issue 9
Ultrasharp interfaces grown with Van der Waals epitaxy
journal, August 1986
- Koma, Atsushi; Yoshimura, Kazuki
- Surface Science, Vol. 174, Issue 1-3
Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
journal, August 2011
- Hong, Young Joon; Fukui, Takashi
- ACS Nano, Vol. 5, Issue 9
Study of electronic properties, stabilities and magnetic quenching of molybdenum-doped germanium clusters: a density functional investigation
journal, January 2014
- Trivedi, Ravi; Dhaka, Kapil; Bandyopadhyay, Debashis
- RSC Adv., Vol. 4, Issue 110
Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxy
journal, March 1985
- Koma, A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 3, Issue 2
Atomic-scale photonic hybrids for mid-infrared and terahertz nanophotonics
journal, January 2016
- Caldwell, Joshua D.; Vurgaftman, Igor; Tischler, Joseph G.
- Nature Nanotechnology, Vol. 11, Issue 1
Engineering Electronic Properties of Graphene by Coupling with Si-Rich, Two-Dimensional Islands
journal, December 2012
- Lee, Dong Hyun; Yi, Jaeseok; Lee, Jung Min
- ACS Nano, Vol. 7, Issue 1
Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy
journal, January 2013
- Bakti Utama, Muhammad Iqbal; Zhang, Qing; Zhang, Jun
- Nanoscale, Vol. 5, Issue 9
Probing Interactions of Ge with Chemical and Thermal SiO 2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy
journal, January 2007
- Li, Qiming; Krauss, Joshua L.; Hersee, Stephen
- The Journal of Physical Chemistry C, Vol. 111, Issue 2
Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
journal, December 2014
- Oh, Hongseok; Hong, Young Joon; Kim, Kun-Su
- NPG Asia Materials, Vol. 6, Issue 12
Incommensurate van der Waals Epitaxy of Nanowire Arrays: A Case Study with ZnO on Muscovite Mica Substrates
journal, January 2012
- Utama, Muhammad Iqbal Bakti; Belarre, Francisco J.; Magen, Cesar
- Nano Letters, Vol. 12, Issue 4
Two-dimensional semiconductors: recent progress and future perspectives
journal, January 2013
- Song, Xiufeng; Hu, Jinlian; Zeng, Haibo
- Journal of Materials Chemistry C, Vol. 1, Issue 17
Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe
journal, December 2000
- Wisotzki, E.; Klein, A.; Jaegermann, W.
- Thin Solid Films, Vol. 380, Issue 1-2
In x Ga 1– x As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
journal, February 2013
- Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
- Nano Letters, Vol. 13, Issue 3
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
journal, August 1992
- Koma, Atsushi
- Thin Solid Films, Vol. 216, Issue 1
Double heterostructure lasers: early days and future perspectives
journal, November 2000
- Alferov, Z.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 6, Issue 6
Fermi-level pinning and charge neutrality level in germanium
journal, December 2006
- Dimoulas, A.; Tsipas, P.; Sotiropoulos, A.
- Applied Physics Letters, Vol. 89, Issue 25
Layered compound substrates for GaN growth
journal, May 1999
- Yamada, Akiyoshi; Ho, Kok Pin; Akaogi, Takayuki
- Journal of Crystal Growth, Vol. 201-202
Works referencing / citing this record:
Recent Progress on Two‐Dimensional Heterostructures for Catalytic, Optoelectronic, and Energy Applications
journal, April 2019
- Xi, Yilian; Zhuang, Jincheng; Hao, Weichang
- ChemElectroChem, Vol. 6, Issue 11
Integration of bulk materials with two-dimensional materials for physical coupling and applications
journal, May 2019
- Bae, Sang-Hoon; Kum, Hyun; Kong, Wei
- Nature Materials, Vol. 18, Issue 6
A roadmap for electronic grade 2D materials
journal, January 2019
- Briggs, Natalie; Subramanian, Shruti; Lin, Zhong
- 2D Materials, Vol. 6, Issue 2
Schottky-barrier modulation at germanium/monolayer MoS 2 heterojunction interface: the roles of passivation and interfacial layer
journal, February 2020
- Ma, Xiaolei; Jiang, Xiangwei; Li, Yuan
- Applied Physics Express, Vol. 13, Issue 2