Resonant tunneling and intrinsic bistability in twisted graphene structures
Abstract
We predict that vertical transport in heterostructures formed by twisted graphene layers can reveal a unique bistability mechanism. Intrinsically bistable I - V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. Thus, the nanoscale architecture can enable uniquely fast switching times.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1371391
- Alternate Identifier(s):
- OSTI ID: 1294727
- Grant/Contract Number:
- SC0001088
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 94; Journal Issue: 8; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; solar (photovoltaic); solid state lighting; photosynthesis (natural and artificial); charge transport; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)
Citation Formats
Rodriguez-Nieva, J. F., Dresselhaus, M. S., and Levitov, L. S. Resonant tunneling and intrinsic bistability in twisted graphene structures. United States: N. p., 2016.
Web. doi:10.1103/PhysRevB.94.085412.
Rodriguez-Nieva, J. F., Dresselhaus, M. S., & Levitov, L. S. Resonant tunneling and intrinsic bistability in twisted graphene structures. United States. https://doi.org/10.1103/PhysRevB.94.085412
Rodriguez-Nieva, J. F., Dresselhaus, M. S., and Levitov, L. S. Mon .
"Resonant tunneling and intrinsic bistability in twisted graphene structures". United States. https://doi.org/10.1103/PhysRevB.94.085412. https://www.osti.gov/servlets/purl/1371391.
@article{osti_1371391,
title = {Resonant tunneling and intrinsic bistability in twisted graphene structures},
author = {Rodriguez-Nieva, J. F. and Dresselhaus, M. S. and Levitov, L. S.},
abstractNote = {We predict that vertical transport in heterostructures formed by twisted graphene layers can reveal a unique bistability mechanism. Intrinsically bistable I - V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. Thus, the nanoscale architecture can enable uniquely fast switching times.},
doi = {10.1103/PhysRevB.94.085412},
journal = {Physical Review B},
number = 8,
volume = 94,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}
Web of Science
Figures / Tables:
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