High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
Abstract
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. We demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
- Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
- IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
- The Barcelona Inst. of Science and Technology (Spain)
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1370894
- Grant/Contract Number:
- SC0001088
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 11; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; graphene; photodetectors; optoelectronics; silicon photonics; autocorrelators; boron nitride
Citation Formats
Shiue, Ren-Jye, Gao, Yuanda, Wang, Yifei, Peng, Cheng, Robertson, Alexander D., Efetov, Dmitri K., Assefa, Solomon, Koppens, Frank H. L., Hone, James, and Englund, Dirk. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit. United States: N. p., 2015.
Web. doi:10.1021/acs.nanolett.5b02368.
Shiue, Ren-Jye, Gao, Yuanda, Wang, Yifei, Peng, Cheng, Robertson, Alexander D., Efetov, Dmitri K., Assefa, Solomon, Koppens, Frank H. L., Hone, James, & Englund, Dirk. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit. United States. https://doi.org/10.1021/acs.nanolett.5b02368
Shiue, Ren-Jye, Gao, Yuanda, Wang, Yifei, Peng, Cheng, Robertson, Alexander D., Efetov, Dmitri K., Assefa, Solomon, Koppens, Frank H. L., Hone, James, and Englund, Dirk. Tue .
"High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit". United States. https://doi.org/10.1021/acs.nanolett.5b02368. https://www.osti.gov/servlets/purl/1370894.
@article{osti_1370894,
title = {High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit},
author = {Shiue, Ren-Jye and Gao, Yuanda and Wang, Yifei and Peng, Cheng and Robertson, Alexander D. and Efetov, Dmitri K. and Assefa, Solomon and Koppens, Frank H. L. and Hone, James and Englund, Dirk},
abstractNote = {Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. We demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.},
doi = {10.1021/acs.nanolett.5b02368},
journal = {Nano Letters},
number = 11,
volume = 15,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}
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