Two-step narrow ridge cascade diode lasers emitting near $$2~\mu$$ m
Abstract
Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.
- Authors:
-
[1];
- State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1368667
- Report Number(s):
- BNL-113990-2017-JA
Journal ID: ISSN 1041-1135; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Photonics Technology Letters
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 6; Journal ID: ISSN 1041-1135
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; waveguide lasers; quantum cascade lasers; optical waveguides; laser modes; measurement by laser beam; current density; Center for Functional Nanomaterials; infrared; type-I quantum well; GaSb-based; cascade pumping; diffraction limited beam
Citation Formats
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States: N. p., 2017.
Web. doi:10.1109/LPT.2016.2647442.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, & Belenky, Gregory. Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m. United States. https://doi.org/10.1109/LPT.2016.2647442
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, and Belenky, Gregory. Mon .
"Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m". United States. https://doi.org/10.1109/LPT.2016.2647442. https://www.osti.gov/servlets/purl/1368667.
@article{osti_1368667,
title = {Two-step narrow ridge cascade diode lasers emitting near $2~\mu$ m},
author = {Feng, Tao and Hosoda, Takashi and Shterengas, Leon and Stein, Aaron and Kipshidze, Gela and Belenky, Gregory},
abstractNote = {Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.},
doi = {10.1109/LPT.2016.2647442},
journal = {IEEE Photonics Technology Letters},
number = 6,
volume = 29,
place = {United States},
year = {Mon Jan 02 00:00:00 EST 2017},
month = {Mon Jan 02 00:00:00 EST 2017}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 4 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
High power cascade diode lasers emitting near 2 μm
journal, March 2016
- Hosoda, Takashi; Feng, Tao; Shterengas, Leon
- Applied Physics Letters, Vol. 108, Issue 13
High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm
conference, December 2013
- Vizbaras, Augustinas; Dvinelis, Edgaras; Greibus, Mindaugas
- SPIE Proceedings
Gain spectra in GaAs double−heterostructure injection lasers
journal, March 1975
- Hakki, Basil W.; Paoli, Thomas L.
- Journal of Applied Physics, Vol. 46, Issue 3
Reliable mid-infrared laterally-coupled distributed-feedback interband cascade lasers
journal, August 2014
- Forouhar, S.; Borgentun, C.; Frez, C.
- Applied Physics Letters, Vol. 105, Issue 5
Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
journal, July 2006
- O’Brien, K.; Sweeney, S. J.; Adams, A. R.
- Applied Physics Letters, Vol. 89, Issue 5
Narrow Ridge $\lambda \approx 3$ - $\mu \text{m}$ Cascade Diode Lasers With Output Power Above 100 mW at Room Temperature
journal, December 2015
- Liang, Rui; Hosoda, Takashi; Shterengas, Leon
- IEEE Photonics Technology Letters, Vol. 27, Issue 23
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
journal, July 2002
- Fehse, R.; Tomic, S.; Adams, A. R.
- IEEE Journal of Selected Topics in Quantum Electronics, Vol. 8, Issue 4
Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power
journal, May 2013
- Hosoda, T.; Liang, R.; Kipshidze, G.
- Electronics Letters, Vol. 49, Issue 10
Measurement of true spontaneous emission spectra from the facet of diode laser structures
journal, January 2002
- Lewis, G. M.; Smowton, P. M.; Thomson, J. D.
- Applied Physics Letters, Vol. 80, Issue 1
Diode lasers with asymmetric waveguide and improved beam properties
journal, June 2010
- Chen, Jianfeng; Kipshidze, Gela; Shterengas, Leon
- Applied Physics Letters, Vol. 96, Issue 24