Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods

Abstract

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral responsemore » to gammas, and μτ product were determined.« less

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [4]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Savannah River Site (SRS), Aiken, SC (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1367976
Alternate Identifier(s):
OSTI ID: 1406493
Report Number(s):
LLNL-JRNL-718467; SRNL-STI-2017-00152
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC52-07NA27344; AC09-08SR22470
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTeSe; point defects; carrier trapping; iDLTS; deep levels; radiation detectors; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States: N. p., 2017. Web. doi:10.1063/1.4979012.
Copy to clipboard
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., & James, R. B. A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods. United States. https://doi.org/10.1063/1.4979012
Copy to clipboard
Gul, R., Roy, U. N., Camarda, G. S., Hossain, A., Yang, G., Vanier, P., Varley, J., Lordi, V., and James, R. B. Tue . "A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods". United States. https://doi.org/10.1063/1.4979012. https://www.osti.gov/servlets/purl/1367976.
Copy to clipboard
@article{osti_1367976,
title = {A Comparison of Point Defects in Cd1-xZnxTe1-ySey Crystals Grown by Bridgman and Traveling Heater Methods},
author = {Gul, R. and Roy, U. N. and Camarda, G. S. and Hossain, A. and Yang, G. and Vanier, P. and Varley, J. and Lordi, V. and James, R. B.},
abstractNote = {In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.},
doi = {10.1063/1.4979012},
journal = {Journal of Applied Physics},
number = ,
volume = 121,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4979012
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 22 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications
journal, March 2004

Research Update: Point defects in CdTe x Se 1−x crystals grown from a Te-rich solution for applications in detecting radiation
journal, April 2015

  • Gul, R.; Roy, U. N.; Bolotnikov, A. E.
  • APL Materials, Vol. 3, Issue 4
  • DOI: 10.1063/1.4917270

Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
journal, April 2010

  • Bolotnikov, Aleksey E.; Babalola, Stephen; Camarda, Giuseppe S.
  • IEEE Transactions on Nuclear Science, Vol. 57, Issue 2
  • DOI: 10.1109/TNS.2010.2042617

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
journal, November 2011

Investigation of the electronic properties of cadmium zinc telluride surfaces using pulsed laser microwave cavity perturbation
conference, December 2001

  • Tepper, Gary C.; Kessick, Royal; Szeles, Csaba
  • International Symposium on Optical Science and Technology, SPIE Proceedings
  • DOI: 10.1117/12.450744

Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTe x Se 1−x detectors
journal, January 2016

  • Gul, R.; Roy, U. N.; Egarievwe, S. U.
  • Journal of Applied Physics, Vol. 119, Issue 2
  • DOI: 10.1063/1.4939647

Characterization of large cadmium zinc telluride crystals grown by traveling heater method
journal, January 2008

  • Chen, H.; Awadalla, S. A.; Iniewski, K.
  • Journal of Applied Physics, Vol. 103, Issue 1
  • DOI: 10.1063/1.2828170

Cadmium zinc telluride and its use as a nuclear radiation detector material
journal, April 2001

  • Schlesinger, T. E.; Toney, J. E.; Yoon, H.
  • Materials Science and Engineering: R: Reports, Vol. 32, Issue 4-5
  • DOI: 10.1016/S0927-796X(01)00027-4

High compositional homogeneity of CdTe x Se 1−x crystals grown by the Bridgman method
journal, February 2015

  • Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.
  • APL Materials, Vol. 3, Issue 2
  • DOI: 10.1063/1.4907250

Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review
journal, July 2003

Point Defects in CdZnTe Crystals Grown by Different Techniques
journal, February 2011

Growth and characterization of CdMnTe by the vertical Bridgman technique
journal, March 2016

Correlations Between Crystal Defects and Performance of CdZnTe Detectors
journal, August 2011

  • Bolotnikov, A. E.; Babalola, S.; Camarda, G. S.
  • IEEE Transactions on Nuclear Science, Vol. 58, Issue 4
  • DOI: 10.1109/TNS.2011.2160283
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal
    journal, October 2018

    • Nan, Ruihua; Li, Tao; Jian, Zengyun
    • Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 23
    • DOI: 10.1007/s10854-018-0180-0

    Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
    journal, December 2018

    • Rejhon, M.; Franc, J.; Dědič, V.
    • Journal of Applied Physics, Vol. 124, Issue 23
    • DOI: 10.1063/1.5063850
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: