Symmetry driven control of optical properties in WO3 films
Abstract
Optical band gap control of semiconducting thin films is critical for the optimization of photoelectronic and photochemical applications. In this work, we demonstrate that the optical band gap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. We show that the implantation of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that this lattice expansion shifts the absorption spectrum to lower energies and effectively reduces the optical band gap by about 0.18 eV per percent expansion of the out-of-plane unit cell length. Furthermore, density functional calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts.
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara (Romania)
- Drexel Univ., Philadelphia, PA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1366393
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 6; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Herklotz, A., Rus, S. F., KC, S., Cooper, V. R., Huon, A., Guo, E. -J., and Ward, T. Z. Symmetry driven control of optical properties in WO3 films. United States: N. p., 2017.
Web. doi:10.1063/1.4989395.
Herklotz, A., Rus, S. F., KC, S., Cooper, V. R., Huon, A., Guo, E. -J., & Ward, T. Z. Symmetry driven control of optical properties in WO3 films. United States. https://doi.org/10.1063/1.4989395
Herklotz, A., Rus, S. F., KC, S., Cooper, V. R., Huon, A., Guo, E. -J., and Ward, T. Z. Fri .
"Symmetry driven control of optical properties in WO3 films". United States. https://doi.org/10.1063/1.4989395. https://www.osti.gov/servlets/purl/1366393.
@article{osti_1366393,
title = {Symmetry driven control of optical properties in WO3 films},
author = {Herklotz, A. and Rus, S. F. and KC, S. and Cooper, V. R. and Huon, A. and Guo, E. -J. and Ward, T. Z.},
abstractNote = {Optical band gap control of semiconducting thin films is critical for the optimization of photoelectronic and photochemical applications. In this work, we demonstrate that the optical band gap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. We show that the implantation of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that this lattice expansion shifts the absorption spectrum to lower energies and effectively reduces the optical band gap by about 0.18 eV per percent expansion of the out-of-plane unit cell length. Furthermore, density functional calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts.},
doi = {10.1063/1.4989395},
journal = {APL Materials},
number = 6,
volume = 5,
place = {United States},
year = {Fri Jun 23 00:00:00 EDT 2017},
month = {Fri Jun 23 00:00:00 EDT 2017}
}
Web of Science
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Works referencing / citing this record:
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