Designing graphene absorption in a multispectral plasmon-enhanced infrared detector
Abstract
Here, we have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. Our simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength and wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1360932
- Report Number(s):
- SAND-2017-5294J
Journal ID: ISSN 1094-4087; OPEXFF; 653418
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Optics Express
- Additional Journal Information:
- Journal Volume: 25; Journal Issue: 11; Journal ID: ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY
Citation Formats
Goldflam, Michael D., Fei, Zhe, Ruiz, Isaac, Howell, Stephen W., Davids, Paul S., Peters, David W., and Beechem, Thomas E. Designing graphene absorption in a multispectral plasmon-enhanced infrared detector. United States: N. p., 2017.
Web. doi:10.1364/oe.25.012400.
Goldflam, Michael D., Fei, Zhe, Ruiz, Isaac, Howell, Stephen W., Davids, Paul S., Peters, David W., & Beechem, Thomas E. Designing graphene absorption in a multispectral plasmon-enhanced infrared detector. United States. https://doi.org/10.1364/oe.25.012400
Goldflam, Michael D., Fei, Zhe, Ruiz, Isaac, Howell, Stephen W., Davids, Paul S., Peters, David W., and Beechem, Thomas E. Thu .
"Designing graphene absorption in a multispectral plasmon-enhanced infrared detector". United States. https://doi.org/10.1364/oe.25.012400. https://www.osti.gov/servlets/purl/1360932.
@article{osti_1360932,
title = {Designing graphene absorption in a multispectral plasmon-enhanced infrared detector},
author = {Goldflam, Michael D. and Fei, Zhe and Ruiz, Isaac and Howell, Stephen W. and Davids, Paul S. and Peters, David W. and Beechem, Thomas E.},
abstractNote = {Here, we have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. Our simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength and wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.},
doi = {10.1364/oe.25.012400},
journal = {Optics Express},
number = 11,
volume = 25,
place = {United States},
year = {Thu May 18 00:00:00 EDT 2017},
month = {Thu May 18 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
Tunable Infrared Devices via Ferroelectric Domain Reconfiguration
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