Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy

Singh, Andy; Luening, Katharina; Brennan, Sean; Homma, Takayuki; Kubo, Nobuhiro; Nowak, Stanisław H.; Pianetta, Piero

doi:10.1107/S1600577516015484

Title: Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy

Abstract

Total reflection X-ray fluorescence (TXRF) analysis is extensively used by the semiconductor industry for measuring trace metal contamination on silicon surfaces. In addition to determining the quantity of impurities on a surface, TXRF can reveal information about the vertical distribution of contaminants by measuring the fluorescence signal as a function of the angle of incidence. In this study, two samples were intentionally contaminated with copper in non-deoxygenated and deoxygenated ultrapure water (UPW) resulting in impurity profiles that were either atomically dispersed in a thin film or particle-like, respectively. The concentration profile of the samples immersed into deoxygenated UPW was calculated using a theoretical concentration profile representative of particles, yielding a mean particle height of 16.1 nm. However, the resulting theoretical profile suggested that a distribution of particle heights exists on the surface. The fit of the angular distribution data was further refined by minimizing the residual error of a least-squares fit employing a model with a Gaussian distribution of particle heights about the mean height. The presence of a height distribution was also confirmed with atomic force microscopy measurements.

Authors:

Singh, Andy ^[1]; Luening, Katharina ^[1]; Brennan, Sean ^[1]; Homma, Takayuki ^[2]; Kubo, Nobuhiro ^[2]; Nowak, Stanisław H. ^[1]; Pianetta, Piero ^[1]

SLAC National Accelerator Lab., Menlo Park, CA (United States)
Waseda Univ., Shinjuku (Japan). Dept. of Applied Chemistry

Publication Date:: Sun Jan 01 00:00:00 EST 2017

Research Org.:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1360905

Grant/Contract Number:: AC02-76SF00515

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Synchrotron Radiation (Online)

Additional Journal Information:: Journal Name: Journal of Synchrotron Radiation (Online); Journal Volume: 24; Journal Issue: 1; Journal ID: ISSN 1600-5775

Publisher:: International Union of Crystallography

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; silicon wafer surface; total reflection X-ray fluorescence; Cu nanoparticle; grazing-incidence X-ray fluorescence

Citation Formats


                    Singh, Andy, Luening, Katharina, Brennan, Sean, Homma, Takayuki, Kubo, Nobuhiro, Nowak, Stanisław H., and Pianetta, Piero. Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy.  United States: N. p., 2017. 
Web.  doi:10.1107/S1600577516015484.

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                    Singh, Andy, Luening, Katharina, Brennan, Sean, Homma, Takayuki, Kubo, Nobuhiro, Nowak, Stanisław H., & Pianetta, Piero. Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy.  United States.  https://doi.org/10.1107/S1600577516015484

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                    Singh, Andy, Luening, Katharina, Brennan, Sean, Homma, Takayuki, Kubo, Nobuhiro, Nowak, Stanisław H., and Pianetta, Piero. Sun .  
"Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy".  United States.  https://doi.org/10.1107/S1600577516015484.  https://www.osti.gov/servlets/purl/1360905.

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@article{osti_1360905,

  title        = {Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy},

  author       = {Singh, Andy and Luening, Katharina and Brennan, Sean and Homma, Takayuki and Kubo, Nobuhiro and Nowak, Stanisław H. and Pianetta, Piero},

  abstractNote = {Total reflection X-ray fluorescence (TXRF) analysis is extensively used by the semiconductor industry for measuring trace metal contamination on silicon surfaces. In addition to determining the quantity of impurities on a surface, TXRF can reveal information about the vertical distribution of contaminants by measuring the fluorescence signal as a function of the angle of incidence. In this study, two samples were intentionally contaminated with copper in non-deoxygenated and deoxygenated ultrapure water (UPW) resulting in impurity profiles that were either atomically dispersed in a thin film or particle-like, respectively. The concentration profile of the samples immersed into deoxygenated UPW was calculated using a theoretical concentration profile representative of particles, yielding a mean particle height of 16.1 nm. However, the resulting theoretical profile suggested that a distribution of particle heights exists on the surface. The fit of the angular distribution data was further refined by minimizing the residual error of a least-squares fit employing a model with a Gaussian distribution of particle heights about the mean height. The presence of a height distribution was also confirmed with atomic force microscopy measurements.},

  doi          = {10.1107/S1600577516015484},

  journal      = {Journal of Synchrotron Radiation (Online)},

  number       = 1,

  volume       = 24,

  place        = {United States},

  year         = {Sun Jan 01 00:00:00 EST 2017},

  month        = {Sun Jan 01 00:00:00 EST 2017}

}

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Works referenced in this record:

Overview and Evolution of Silicon Wafer Cleaning Technology
book, January 2008

Kern, Werner
Handbook of Silicon Wafer Cleaning Technology
DOI: 10.1016/B978-081551554-8.50004-5

Effects of Ambient and Dissolved Oxygen Concentration in Ultrapure Water on Initial Growth of Native Oxide on a Silicon (100) Surface
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Li, Fuhe; Balazs, Marjorie K.; Anderson, Scott
Journal of The Electrochemical Society, Vol. 152, Issue 8
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Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy
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Removal of dissolved oxygen from water: A comparison of four common techniques
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Butler, I.
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Total reflection x‐ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited)
journal, February 1995

Pianetta, P.; Takaura, N.; Brennan, S.
Review of Scientific Instruments, Vol. 66, Issue 2
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Depth profiling of low energy ion implantations in Si and Ge by means of micro-focused grazing emission X-ray fluorescence and grazing incidence X-ray fluorescence
journal, January 2015

Kayser, Yves; Hönicke, Philipp; Banaś, Dariusz
Journal of Analytical Atomic Spectrometry, Vol. 30, Issue 5
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journal, June 2010

Meirer, F.; Singh, A.; Pianetta, P.
TrAC Trends in Analytical Chemistry, Vol. 29, Issue 6
DOI: 10.1016/j.trac.2010.04.001

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Title: Determination of copper nanoparticle size distributions with total reflection X-ray fluorescence spectroscopy

Abstract

Citation Formats

Overview and Evolution of Silicon Wafer Cleaning Technology book, January 2008

Effects of Ambient and Dissolved Oxygen Concentration in Ultrapure Water on Initial Growth of Native Oxide on a Silicon (100) Surface journal, January 2005

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy journal, January 2012

Removal of dissolved oxygen from water: A comparison of four common techniques journal, February 1994

Total reflection x‐ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited) journal, February 1995

Depth profiling of low energy ion implantations in Si and Ge by means of micro-focused grazing emission X-ray fluorescence and grazing incidence X-ray fluorescence journal, January 2015

Synchrotron radiation-induced total reflection X-ray fluorescence analysis journal, June 2010

Overview and Evolution of Silicon Wafer Cleaning Technology
book, January 2008

Effects of Ambient and Dissolved Oxygen Concentration in Ultrapure Water on Initial Growth of Native Oxide on a Silicon (100) Surface
journal, January 2005

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy
journal, January 2012

Removal of dissolved oxygen from water: A comparison of four common techniques
journal, February 1994

Total reflection x‐ray fluorescence spectroscopy using synchrotron radiation for wafer surface trace impurity analysis (invited)
journal, February 1995

Depth profiling of low energy ion implantations in Si and Ge by means of micro-focused grazing emission X-ray fluorescence and grazing incidence X-ray fluorescence
journal, January 2015

Synchrotron radiation-induced total reflection X-ray fluorescence analysis
journal, June 2010