Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene
Abstract
In this paper, we report high-resolution scanning transmission electron microscopy images displaying a range of inclusions of isolated silicon atoms at the edges and inner zones of graphene layers. Whereas the incorporation of Si atoms to a graphene armchair edge involves no reconstruction of the neighboring carbon atoms, the inclusion of a Si atom to a zigzag graphene edge entails the formation of five-membered carbon rings. In all the observed atomic edge terminations, a Si atom is found bridging two C atoms in a 2-fold coordinated configuration. The atomic-scale observations are underpinned by first-principles calculations of the electronic and quantum transport properties of the structural anomalies. Finally, experimental estimations of Si-doped graphene band gaps realized by means of transport measurements may be affected by a low doping rate of 2-fold coordinated Si atoms at the graphene edges, and 4-fold coordinated at inner zones due to the apparition of mobility gaps.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences Division
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
- OSTI Identifier:
- 1356648
- Grant/Contract Number:
- AC02-06CH11357; AC05-00OR22725; DMR-0938330
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry Letters
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 1948-7185
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; edge; electronic structure; graphene; mobility gap; silicon
Citation Formats
Lopez-Bezanilla, Alejandro, Zhou, Wu, and Idrobo, Juan-Carlos. Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene. United States: N. p., 2014.
Web. doi:10.1021/jz500403h.
Lopez-Bezanilla, Alejandro, Zhou, Wu, & Idrobo, Juan-Carlos. Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene. United States. https://doi.org/10.1021/jz500403h
Lopez-Bezanilla, Alejandro, Zhou, Wu, and Idrobo, Juan-Carlos. Thu .
"Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene". United States. https://doi.org/10.1021/jz500403h. https://www.osti.gov/servlets/purl/1356648.
@article{osti_1356648,
title = {Electronic and Quantum Transport Properties of Atomically Identified Si Point Defects in Graphene},
author = {Lopez-Bezanilla, Alejandro and Zhou, Wu and Idrobo, Juan-Carlos},
abstractNote = {In this paper, we report high-resolution scanning transmission electron microscopy images displaying a range of inclusions of isolated silicon atoms at the edges and inner zones of graphene layers. Whereas the incorporation of Si atoms to a graphene armchair edge involves no reconstruction of the neighboring carbon atoms, the inclusion of a Si atom to a zigzag graphene edge entails the formation of five-membered carbon rings. In all the observed atomic edge terminations, a Si atom is found bridging two C atoms in a 2-fold coordinated configuration. The atomic-scale observations are underpinned by first-principles calculations of the electronic and quantum transport properties of the structural anomalies. Finally, experimental estimations of Si-doped graphene band gaps realized by means of transport measurements may be affected by a low doping rate of 2-fold coordinated Si atoms at the graphene edges, and 4-fold coordinated at inner zones due to the apparition of mobility gaps.},
doi = {10.1021/jz500403h},
journal = {Journal of Physical Chemistry Letters},
number = 10,
volume = 5,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2014},
month = {Thu May 01 00:00:00 EDT 2014}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 13 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
journal, September 2009
- Guinea, F.; Katsnelson, M. I.; Geim, A. K.
- Nature Physics, Vol. 6, Issue 1
Energy Band-Gap Engineering of Graphene Nanoribbons
journal, May 2007
- Han, Melinda Y.; Özyilmaz, Barbaros; Zhang, Yuanbo
- Physical Review Letters, Vol. 98, Issue 20
Hydrocarbon lithography on graphene membranes
journal, March 2008
- Meyer, Jannik C.; Girit, C. O.; Crommie, M. F.
- Applied Physics Letters, Vol. 92, Issue 12
Hydrogenation of Ferrimagnetic Graphene on a Co Surface: Significant Enhancement of Spin Moments by C–H Functionality
journal, September 2012
- Kaul, Indu; Joshi, Niharika; Ballav, Nirmalya
- The Journal of Physical Chemistry Letters, Vol. 3, Issue 18
Mobility Gap and Anomalous Dispersion
journal, September 1973
- Mattis, Daniel C.; Yonezawa, Fumiko
- Physical Review Letters, Vol. 31, Issue 13
Nonvolatile Switching in Graphene Field-Effect Devices
journal, August 2008
- Echtermeyer, T. J.; Lemme, M. C.; Baus, M.
- IEEE Electron Device Letters, Vol. 29, Issue 8
Chemically enriched graphene-based switching devices: A novel principle driven by impurity-induced quasibound states and quantum coherence
journal, March 2012
- Roche, Stephan; Biel, Blanca; Cresti, Alessandro
- Physica E: Low-dimensional Systems and Nanostructures, Vol. 44, Issue 6
Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
journal, March 2009
- Biel, Blanca; Blase, X.; Triozon, François
- Physical Review Letters, Vol. 102, Issue 9
Large-scale pattern growth of graphene films for stretchable transparent electrodes
journal, January 2009
- Kim, Keun Soo; Zhao, Yue; Jang, Houk
- Nature, Vol. 457, Issue 7230
Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
journal, December 2004
- Berger, Claire; Song, Zhimin; Li, Tianbo
- The Journal of Physical Chemistry B, Vol. 108, Issue 52, p. 19912-19916
Direct Determination of the Chemical Bonding of Individual Impurities in Graphene
journal, November 2012
- Zhou, Wu; Kapetanakis, Myron D.; Prange, Micah P.
- Physical Review Letters, Vol. 109, Issue 20
Atomically localized plasmon enhancement in monolayer graphene
journal, January 2012
- Zhou, Wu; Lee, Jaekwang; Nanda, Jagjit
- Nature Nanotechnology, Vol. 7, Issue 3
Electronic structure of silicon-based nanostructures
journal, August 2007
- Guzmán-Verri, Gian G.; Lew Yan Voon, L. C.
- Physical Review B, Vol. 76, Issue 7
Evidence for graphene edges beyond zigzag and armchair
journal, August 2009
- Koskinen, Pekka; Malola, Sami; Häkkinen, Hannu
- Physical Review B, Vol. 80, Issue 7
Disorder and Defect Healing in Graphene on Ni(111)
journal, December 2011
- Jacobson, Peter; Stöger, Bernhard; Garhofer, Andreas
- The Journal of Physical Chemistry Letters, Vol. 3, Issue 1
Single Atom Microscopy
journal, November 2012
- Zhou, Wu; Oxley, Mark P.; Lupini, Andrew R.
- Microscopy and Microanalysis, Vol. 18, Issue 6
Localization of inelastic electron scattering in the low-loss energy regime
journal, August 2012
- Zhou, Wu; Pennycook, Stephen J.; Idrobo, Juan-Carlos
- Ultramicroscopy, Vol. 119
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics
journal, August 2012
- Marconcini, Paolo; Cresti, Alessandro; Triozon, François
- ACS Nano, Vol. 6, Issue 9
Embedded boron nitride domains in graphene nanoribbons for transport gap engineering
journal, October 2012
- Lopez-Bezanilla, Alejandro; Roche, Stephan
- Physical Review B, Vol. 86, Issue 16
How Do Aryl Groups Attach to a Graphene Sheet?
journal, October 2006
- Jiang, De-en; Sumpter, Bobby G.; Dai, Sheng
- The Journal of Physical Chemistry B, Vol. 110, Issue 47, p. 23628-23632
Chemical Functionalization Effects on Armchair Graphene Nanoribbon Transport
journal, July 2009
- López-Bezanilla, Alejandro; Triozon, François; Roche, Stephan
- Nano Letters, Vol. 9, Issue 7
An electron microscope for the aberration-corrected era
journal, February 2008
- Krivanek, O. L.; Corbin, G. J.; Dellby, N.
- Ultramicroscopy, Vol. 108, Issue 3
Self-consistent order- density-functional calculations for very large systems
journal, April 1996
- Ordejón, Pablo; Artacho, Emilio; Soler, José M.
- Physical Review B, Vol. 53, Issue 16
Effect of the Chemical Functionalization on Charge Transport in Carbon Nanotubes at the Mesoscopic Scale
journal, March 2009
- López-Bezanilla, Alejandro; Triozon, François; Latil, Sylvain
- Nano Letters, Vol. 9, Issue 3
Works referencing / citing this record:
Tuning electronic transport properties of zigzag graphene nanoribbons with silicon doping and phosphorus passivation
journal, August 2018
- Tien, Nguyen Thanh; Phuc, Vo Trung; Ahuja, Rajeev
- AIP Advances, Vol. 8, Issue 8
Individual Gas Molecules Detection Using Zinc Oxide–Graphene Hybrid Nanosensor: A DFT Study
journal, August 2018
- Torres, Ingrid; Mehdi Aghaei, Sadegh; Rabiei Baboukani, Amin
- C, Vol. 4, Issue 3
Electronic Transport in the V-Shaped Edge Distorted Zigzag Graphene Nanoribbons with Substitutional Doping
journal, February 2019
- Tien, Nguyen Thanh; Ut, Nguyen Van; Hoc, Bui Thai
- Advances in Condensed Matter Physics, Vol. 2019