Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]
Abstract
Radio‐frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3 ) is fabricated through a modified single‐step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p–i–n device architecture with spin‐coated poly‐(3,4‐ethylenedioxythiophene):poly‐styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm −2 and an open circuit potential of 1.19 V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter‐coated ZnO offers shielding from potential plasma‐related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)‐based devices.
- Authors:
-
- IIT Bombay, Mumbai (India)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1353425
- Alternate Identifier(s):
- OSTI ID: 1400608
- Report Number(s):
- NREL/JA-5K00-68057
Journal ID: ISSN 2196-7350
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 8; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; FAPbBr3; inorganic electron transport layer; PCBM; sputtering; stability; ZnO
Citation Formats
Subbiah, Anand S., Agarwal, Sumanshu, Mahuli, Neha, Nair, Pradeep, van Hest, Maikel, and Sarkar, Shaibal K. Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]. United States: N. p., 2017.
Web. doi:10.1002/admi.201601143.
Subbiah, Anand S., Agarwal, Sumanshu, Mahuli, Neha, Nair, Pradeep, van Hest, Maikel, & Sarkar, Shaibal K. Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]. United States. https://doi.org/10.1002/admi.201601143
Subbiah, Anand S., Agarwal, Sumanshu, Mahuli, Neha, Nair, Pradeep, van Hest, Maikel, and Sarkar, Shaibal K. Fri .
"Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]". United States. https://doi.org/10.1002/admi.201601143. https://www.osti.gov/servlets/purl/1353425.
@article{osti_1353425,
title = {Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr3 devices with improved efficiency using sputtered inorganic electron transport layer]},
author = {Subbiah, Anand S. and Agarwal, Sumanshu and Mahuli, Neha and Nair, Pradeep and van Hest, Maikel and Sarkar, Shaibal K.},
abstractNote = {Radio‐frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3 ) is fabricated through a modified single‐step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p–i–n device architecture with spin‐coated poly‐(3,4‐ethylenedioxythiophene):poly‐styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm −2 and an open circuit potential of 1.19 V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter‐coated ZnO offers shielding from potential plasma‐related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)‐based devices.},
doi = {10.1002/admi.201601143},
journal = {Advanced Materials Interfaces},
number = 8,
volume = 4,
place = {United States},
year = {Fri Feb 10 00:00:00 EST 2017},
month = {Fri Feb 10 00:00:00 EST 2017}
}
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