An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Ju, Guangxu; Highland, Matthew J.; Yanguas-Gil, Angel; Thompson, Carol; Eastman, Jeffrey A.; Zhou, Hua; Brennan, Sean M.; Stephenson, G. Brian; Fuoss, Paul H.

doi:10.1063/1.4978656

Title: An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Abstract

Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.

Authors:

Ju, Guangxu ^[1]; Highland, Matthew J. ^[1];

^[1]; Thompson, Carol ^[2]; Eastman, Jeffrey A. ^[1]; Zhou, Hua ^[1];

^[3]; Stephenson, G. Brian ^[1]; Fuoss, Paul H. ^[1]

Argonne National Lab. (ANL), Argonne, IL (United States)
Northern Illinois Univ., DeKalb, IL (United States)
Fairview Assoc., Jackson, WY (United States)

Publication Date:: Tue Mar 21 00:00:00 EDT 2017

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Materials Sciences and Engineering Division

OSTI Identifier:: 1353038

Alternate Identifier(s):: OSTI ID: 1373969

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Review of Scientific Instruments

Additional Journal Information:: Journal Volume: 88; Journal Issue: 3; Journal ID: ISSN 0034-6748

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats


                    Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, and Fuoss, Paul H. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4978656.

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                    Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, & Fuoss, Paul H. An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides.  United States.  https://doi.org/10.1063/1.4978656

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                    Ju, Guangxu, Highland, Matthew J., Yanguas-Gil, Angel, Thompson, Carol, Eastman, Jeffrey A., Zhou, Hua, Brennan, Sean M., Stephenson, G. Brian, and Fuoss, Paul H. Tue .  
"An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides".  United States.  https://doi.org/10.1063/1.4978656.  https://www.osti.gov/servlets/purl/1353038.

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@article{osti_1353038,

  title        = {An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides},

  author       = {Ju, Guangxu and Highland, Matthew J. and Yanguas-Gil, Angel and Thompson, Carol and Eastman, Jeffrey A. and Zhou, Hua and Brennan, Sean M. and Stephenson, G. Brian and Fuoss, Paul H.},

  abstractNote = {Here, we describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray methods. The system includes high-resolution positioning of the sample and detector including full rotations, an x-ray transparent chamber wall for incident and diffracted beam access over a wide angular range, and minimal thermal sample motion, giving the sub-micron positional stability and reproducibility needed for coherent x-ray studies. The instrument enables surface x-ray photon correlation spectroscopy, microbeam diffraction, and coherent diffraction imaging of atomic-scale surface and film structure and dynamics during growth, to provide fundamental understanding of MOVPE processes.},

  doi          = {10.1063/1.4978656},

  journal      = {Review of Scientific Instruments},

  number       = 3,

  volume       = 88,

  place        = {United States},

  year         = {Tue Mar 21 00:00:00 EDT 2017},

  month        = {Tue Mar 21 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth
journal, March 2019

Ju, Guangxu; Xu, Dongwei; Highland, Matthew J.
Nature Physics, Vol. 15, Issue 6
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FORTE – a multipurpose high-vacuum diffractometer for tender X-ray diffraction and spectroscopy at the SIRIUS beamline of Synchrotron SOLEIL
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Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy
preprint, January 2020

Ju, Guangxu; Xu, Dongwei; Thompson, Carol
arXiv
DOI: 10.48550/arxiv.2007.05083

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Title: An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

Abstract

Citation Formats

Ion-assisted nucleation and growth of GaN on sapphire(0001) journal, August 1998

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals journal, August 2014

Nitride-MBE system for in situ synchrotron X-ray measurements journal, April 2016

Revealing the atomic dance journal, September 2009

Thermal diffusivity and thermal conductivity of single-crystal MgO and Al2O3 and related compounds as a function of temperature journal, January 2014

From Grain Boundaries to Single Defects: A Review of Coherent Methods for Materials Imaging in the X-ray Sciences journal, August 2013

High temperature refractive indices of GaN journal, June 2006

Indium adsorption on GaN under metal-organic chemical vapor deposition conditions journal, October 2006

Surface Sensitive X-Ray Scattering journal, August 1990

GaN Nucleation and Growth on Sapphire (0001): Incorporation and Interlayer Transport journal, November 1999

Observation of speckle by diffraction with coherent X-rays journal, August 1991

Surface X-Ray Speckles: Coherent Surface Diffraction from Au(001) journal, October 2009

Coherent X-Ray Study of Fluctuations during Domain Coarsening journal, December 1998

Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography journal, September 2012

A tensorial approach to computational continuum mechanics using object-oriented techniques journal, January 1998

Laser interferometric thermometry for substrate temperature measurement journal, January 1991

Lattice parameters and thermal expansion of GaN journal, January 2000

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy journal, December 2014

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN journal, January 1999

Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth journal, January 2013

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process journal, January 2007

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X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth journal, June 2001

X-ray characterization of GaN and related materials at growth temperatures–system design and measurements journal, September 2011

Index of refraction of sapphire between 24 and 1060°C for wavelengths of 633 and 799 nm journal, January 1986

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C journal, November 2008

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy journal, March 2014

Ptychographic x-ray imaging of surfaces on crystal truncation rod journal, March 2015

Novel metalorganic chemical vapor deposition system for GaN growth journal, May 1991

Experimental considerations for in situ X-ray scattering analysis of OMVPE growth journal, May 1990

Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth journal, March 2019

FORTE – a multipurpose high-vacuum diffractometer for tender X-ray diffraction and spectroscopy at the SIRIUS beamline of Synchrotron SOLEIL journal, May 2019

Dynamics of Atomic Steps on GaN (0001) during Vapor Phase Epitaxy preprint, January 2020

Ion-assisted nucleation and growth of GaN on sapphire(0001)
journal, August 1998

Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals
journal, August 2014

Nitride-MBE system for in situ synchrotron X-ray measurements
journal, April 2016

Revealing the atomic dance
journal, September 2009

Thermal diffusivity and thermal conductivity of single-crystal MgO and Al2O3 and related compounds as a function of temperature
journal, January 2014

From Grain Boundaries to Single Defects: A Review of Coherent Methods for Materials Imaging in the X-ray Sciences
journal, August 2013

High temperature refractive indices of GaN
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Indium adsorption on GaN under metal-organic chemical vapor deposition conditions
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Surface Sensitive X-Ray Scattering
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GaN Nucleation and Growth on Sapphire (0001): Incorporation and Interlayer Transport
journal, November 1999

Observation of speckle by diffraction with coherent X-rays
journal, August 1991

Surface X-Ray Speckles: Coherent Surface Diffraction from Au(001)
journal, October 2009

Coherent X-Ray Study of Fluctuations during Domain Coarsening
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A tensorial approach to computational continuum mechanics using object-oriented techniques
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Laser interferometric thermometry for substrate temperature measurement
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Lattice parameters and thermal expansion of GaN
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Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
journal, December 2014

Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN
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Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth
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High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process
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X-ray photon correlation spectroscopy
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X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth
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X-ray characterization of GaN and related materials at growth temperatures–system design and measurements
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Index of refraction of sapphire between 24 and 1060°C for wavelengths of 633 and 799 nm
journal, January 1986

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
journal, November 2008

In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
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Ptychographic x-ray imaging of surfaces on crystal truncation rod
journal, March 2015

Novel metalorganic chemical vapor deposition system for GaN growth
journal, May 1991

Experimental considerations for in situ X-ray scattering analysis of OMVPE growth
journal, May 1990

Coherent X-ray spectroscopy reveals the persistence of island arrangements during layer-by-layer growth
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