Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography
Abstract
Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region. 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.
- Authors:
-
- Arizona State Univ., Tempe, AZ (United States)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of Pittsburgh, Pittsburgh, PA (United States)
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1340784
- Alternate Identifier(s):
- OSTI ID: 1324364
- Report Number(s):
- PNNL-SA-106309
Journal ID: ISSN 0021-8979; JAPIAU; 47607; KP1704020
- Grant/Contract Number:
- AC05-76RL01830; AC52-06NA25396; FG02-04ER46168
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Environmental Molecular Sciences Laboratory
Citation Formats
Gan, Zhaofeng, Perea, Daniel E., Yoo, Jinkyoung, He, Yang, Colby, Robert J., Barker, Josh E., Gu, Meng, Mao, Scott X., Wang, Chongmin, Picraux, S. T., Smith, David J., and McCartney, Martha R. Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography. United States: N. p., 2016.
Web. doi:10.1063/1.4962380.
Gan, Zhaofeng, Perea, Daniel E., Yoo, Jinkyoung, He, Yang, Colby, Robert J., Barker, Josh E., Gu, Meng, Mao, Scott X., Wang, Chongmin, Picraux, S. T., Smith, David J., & McCartney, Martha R. Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography. United States. https://doi.org/10.1063/1.4962380
Gan, Zhaofeng, Perea, Daniel E., Yoo, Jinkyoung, He, Yang, Colby, Robert J., Barker, Josh E., Gu, Meng, Mao, Scott X., Wang, Chongmin, Picraux, S. T., Smith, David J., and McCartney, Martha R. Tue .
"Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography". United States. https://doi.org/10.1063/1.4962380. https://www.osti.gov/servlets/purl/1340784.
@article{osti_1340784,
title = {Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography},
author = {Gan, Zhaofeng and Perea, Daniel E. and Yoo, Jinkyoung and He, Yang and Colby, Robert J. and Barker, Josh E. and Gu, Meng and Mao, Scott X. and Wang, Chongmin and Picraux, S. T. and Smith, David J. and McCartney, Martha R.},
abstractNote = {Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region. 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.},
doi = {10.1063/1.4962380},
journal = {Journal of Applied Physics},
number = 10,
volume = 120,
place = {United States},
year = {Tue Sep 13 00:00:00 EDT 2016},
month = {Tue Sep 13 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Vertical Nanowire Heterojunction Devices Based on a Clean Si/Ge Interface
journal, October 2013
- Chen, Lin; Fung, Wayne Y.; Lu, Wei
- Nano Letters, Vol. 13, Issue 11
High-resolution detection of Au catalyst atoms in Si nanowires
journal, February 2008
- Allen, Jonathan E.; Hemesath, Eric R.; Perea, Daniel E.
- Nature Nanotechnology, Vol. 3, Issue 3
Donor deactivation in silicon nanostructures
journal, January 2009
- Björk, Mikael T.; Schmid, Heinz; Knoch, Joachim
- Nature Nanotechnology, Vol. 4, Issue 2
Silicon Vertically Integrated Nanowire Field Effect Transistors
journal, May 2006
- Goldberger, Josh; Hochbaum, Allon I.; Fan, Rong
- Nano Letters, Vol. 6, Issue 5
Advanced core/multishell germanium/silicon nanowire heterostructures: The Au-diffusion bottleneck
journal, July 2011
- Dayeh, Shadi A.; Mack, Nathan H.; Huang, Jian Yu
- Applied Physics Letters, Vol. 99, Issue 2
Measurement of Active Dopant Distribution and Diffusion in Individual Silicon Nanowires
journal, April 2010
- Koren, Elad; Berkovitch, Noel; Rosenwaks, Yossi
- Nano Letters, Vol. 10, Issue 4
Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography
journal, October 2013
- Gan, Zhaofeng; Perea, Daniel E.; Yoo, Jinkyoung
- Applied Physics Letters, Vol. 103, Issue 15
Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire
journal, March 2009
- Perea, Daniel E.; Hemesath, Eric R.; Schwalbach, Edwin J.
- Nature Nanotechnology, Vol. 4, Issue 5
Mapping Active Dopants in Single Silicon Nanowires Using Off-Axis Electron Holography
journal, November 2009
- den Hertog, Martien I.; Schmid, Heinz; Cooper, David
- Nano Letters, Vol. 9, Issue 11
Silicon nanowires: electron holography studies of doped p–n junctions and biased Schottky barriers
journal, March 2013
- He, Kai; Cho, Jeong-Hyun; Jung, Yeonwoong
- Nanotechnology, Vol. 24, Issue 11
Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires
journal, January 2011
- Koren, E.; Hyun, J. K.; Givan, U.
- Nano Letters, Vol. 11, Issue 1
Semiconductor dopant profiling by off-axis electron holography
journal, February 2003
- Li, Jing; McCartney, M. R.; Smith, David J.
- Ultramicroscopy, Vol. 94, Issue 2
Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements
journal, November 1960
- Wolfstirn, Katherine B.
- Journal of Physics and Chemistry of Solids, Vol. 16, Issue 3-4
Growth, Defect Formation, and Morphology Control of Germanium–Silicon Semiconductor Nanowire Heterostructures
journal, October 2011
- Dayeh, Shadi A.; Wang, Jian; Li, Nan
- Nano Letters, Vol. 11, Issue 10
Resistivity and deep impurity levels in silicon at 300 K
journal, June 1977
- Sclar, N.
- IEEE Transactions on Electron Devices, Vol. 24, Issue 6
Tomographic analysis of dilute impurities in semiconductor nanostructures
journal, July 2008
- Perea, D. E.; Wijaya, E.; Lensch-Falk, J. L.
- Journal of Solid State Chemistry, Vol. 181, Issue 7
Controlling Heterojunction Abruptness in VLS-Grown Semiconductor Nanowires via in situ Catalyst Alloying
journal, August 2011
- Perea, Daniel E.; Li, Nan; Dickerson, Robert M.
- Nano Letters, Vol. 11, Issue 8
Electron holography for fields in solids: Problems and progress
journal, November 2013
- Lichte, Hannes; Börrnert, Felix; Lenk, Andreas
- Ultramicroscopy, Vol. 134
Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
journal, November 2009
- Wen, C. -Y.; Reuter, M. C.; Bruley, J.
- Science, Vol. 326, Issue 5957
Solid Solubilities of Impurity Elements in Germanium and Silicon*
journal, January 1960
- Trumbore, F. A.
- Bell System Technical Journal, Vol. 39, Issue 1
Doping Limits of Grown in situ Doped Silicon Nanowires Using Phosphine
journal, January 2009
- Schmid, Heinz; Björk, Mikael T.; Knoch, Joachim
- Nano Letters, Vol. 9, Issue 1
Growth of nanowire superlattice structures for nanoscale photonics and electronics
journal, February 2002
- Gudiksen, Mark S.; Lauhon, Lincoln J.; Wang, Jianfang
- Nature, Vol. 415, Issue 6872, p. 617-620
Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor
journal, January 2006
- Schmidt, Volker; Riel, Heike; Senz, Stephan
- Small, Vol. 2, Issue 1
Relationship between Gallium Concentration and Resistivity of Gallium-Doped Czochralski Silicon Crystals: Investigation of a Conversion Curve
journal, December 2008
- Hoshikawa, Takeshi; Huang, Xinming; Hoshikawa, Keigo
- Japanese Journal of Applied Physics, Vol. 47, Issue 12
Encoding Abrupt and Uniform Dopant Profiles in Vapor–Liquid–Solid Nanowires by Suppressing the Reservoir Effect of the Liquid Catalyst
journal, November 2014
- Christesen, Joseph D.; Pinion, Christopher W.; Zhang, Xing
- ACS Nano, Vol. 8, Issue 11
Spatially Resolved Correlation of Active and Total Doping Concentrations in VLS Grown Nanowires
journal, May 2013
- Amit, Iddo; Givan, Uri; Connell, Justin G.
- Nano Letters, Vol. 13, Issue 6
Determination of Polarization-Fields Across Polytype Interfaces in InAs Nanopillars
journal, November 2013
- Li, Luying; Gan, Zhaofeng; McCartney, Martha R.
- Advanced Materials, Vol. 26, Issue 7
Electron Holography: Phase Imaging with Nanometer Resolution
journal, August 2007
- McCartney, Martha R.; Smith, David J.
- Annual Review of Materials Research, Vol. 37, Issue 1
Determination of mean inner potential of germanium using off-axis electron holography
journal, July 1999
- Li, Jing; McCartney, M. R.; Dunin-Borkowski, R. E.
- Acta Crystallographica Section A Foundations of Crystallography, Vol. 55, Issue 4
Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires
journal, November 2005
- Wang, Yanfeng; Lew, Kok-Keong; Ho, Tsung-Ta
- Nano Letters, Vol. 5, Issue 11
Quantitative phase imaging of nanoscale electrostatic and magnetic fields using off-axis electron holography
journal, April 2010
- McCartney, Martha R.; Agarwal, Nipun; Chung, Suk
- Ultramicroscopy, Vol. 110, Issue 5