Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes
Abstract
Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Avogy, Inc., San Jose, CA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1338314
- Report Number(s):
- SAND-2016-7133J
Journal ID: ISSN 0168-583X; PII: S0168583X16305092; TRN: US1701185
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Additional Journal Information:
- Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms; Journal ID: ISSN 0168-583X
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; GaN; IBIC; displacement damage
Citation Formats
Vizkelethy, G., King, M. P., Aktas, O., Kizilyalli, I. C., and Kaplar, R. J. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes. United States: N. p., 2016.
Web. doi:10.1016/j.nimb.2016.11.031.
Vizkelethy, G., King, M. P., Aktas, O., Kizilyalli, I. C., & Kaplar, R. J. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes. United States. https://doi.org/10.1016/j.nimb.2016.11.031
Vizkelethy, G., King, M. P., Aktas, O., Kizilyalli, I. C., and Kaplar, R. J. Fri .
"Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes". United States. https://doi.org/10.1016/j.nimb.2016.11.031. https://www.osti.gov/servlets/purl/1338314.
@article{osti_1338314,
title = {Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes},
author = {Vizkelethy, G. and King, M. P. and Aktas, O. and Kizilyalli, I. C. and Kaplar, R. J.},
abstractNote = {Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.},
doi = {10.1016/j.nimb.2016.11.031},
journal = {Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 02 00:00:00 EST 2016},
month = {Fri Dec 02 00:00:00 EST 2016}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Cited by: 2 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.