Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR

Ando, M.; Nozawa, Takashi; Hirose, Takanori; Tanigawa, H.; Wakai, E.; Stoller, Roger E; Myers, Janie

doi:10.13182/FST14-963

Title: Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR

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Abstract

The diameter of pressurized tubes of F82H and B-doped F82H irradiated up to similar to 6 dpa have been measured by a non-contacting laser profilometer. The irradiation creep strains of F82H irradiated at 573 and 673K were almost linearly dependent on the effective stress level for stresses below 260 MPa and 170 MPa, respectively. The creep strain of (BN)-B-10-F82H was similar to that of F82H IEA at each effective stress level except 294 MPa at 573K irradiation. For 673K irradiation, the creep strain of some (BN)-B-10-F82H tubes was larger than that of F82H tubes. However, the generation of similar to 300 appm He did not cause a large difference in the irradiation creep behavior at 6 dpa.

Authors:

Ando, M. ^[1]; Nozawa, Takashi ^[1]; Hirose, Takanori ^[1]; Tanigawa, H. ^[1]; Wakai, E. ^[1]; Stoller, Roger E ^[2]; Myers, Janie ^[2]

Japan Atomic Energy Agency (JAEA), Rokkasho-mura (Japan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Thu Jul 30 00:00:00 EDT 2015

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Fusion Energy Sciences (FES); Japan Atomic Energy Agency

OSTI Identifier:: 1336590

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Fusion Science and Technology

Additional Journal Information:: Journal Volume: 68; Journal Issue: 3; Journal ID: ISSN 1536-1055

Publisher:: American Nuclear Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Ando, M., Nozawa, Takashi, Hirose, Takanori, Tanigawa, H., Wakai, E., Stoller, Roger E, and Myers, Janie. Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR.  United States: N. p., 2015. 
Web.  doi:10.13182/FST14-963.

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                    Ando, M., Nozawa, Takashi, Hirose, Takanori, Tanigawa, H., Wakai, E., Stoller, Roger E, & Myers, Janie. Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR.  United States.  https://doi.org/10.13182/FST14-963

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                    Ando, M., Nozawa, Takashi, Hirose, Takanori, Tanigawa, H., Wakai, E., Stoller, Roger E, and Myers, Janie. Thu .  
"Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR".  United States.  https://doi.org/10.13182/FST14-963.  https://www.osti.gov/servlets/purl/1336590.

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@article{osti_1336590,

  title        = {Effect of helium on irradiation creep behavior of B-doped F82H irradiated in HFIR},

  author       = {Ando, M. and Nozawa, Takashi and Hirose, Takanori and Tanigawa, H. and Wakai, E. and Stoller, Roger E and Myers, Janie},

  abstractNote = {The diameter of pressurized tubes of F82H and B-doped F82H irradiated up to similar to 6 dpa have been measured by a non-contacting laser profilometer. The irradiation creep strains of F82H irradiated at 573 and 673K were almost linearly dependent on the effective stress level for stresses below 260 MPa and 170 MPa, respectively. The creep strain of (BN)-B-10-F82H was similar to that of F82H IEA at each effective stress level except 294 MPa at 573K irradiation. For 673K irradiation, the creep strain of some (BN)-B-10-F82H tubes was larger than that of F82H tubes. However, the generation of similar to 300 appm He did not cause a large difference in the irradiation creep behavior at 6 dpa.},

  doi          = {10.13182/FST14-963},

  journal      = {Fusion Science and Technology},

  number       = 3,

  volume       = 68,

  place        = {United States},

  year         = {Thu Jul 30 00:00:00 EDT 2015},

  month        = {Thu Jul 30 00:00:00 EDT 2015}

}

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