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Title: Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten

Abstract

Here, the growth process of spherical helium bubbles located 6 nm below a (100) surface is studied using molecular dynamics and parallel replica dynamics simulations, over growth rates from 106 to 1012 helium atoms per second. Slower growth rates lead to a release of pressure and lower helium content as compared with fast growth cases. In addition, at slower growth rates, helium bubbles are not decorated by multiple dislocation loops, as these tend to merge or emit given sufficient time. At faster rates, dislocation loops nucleate faster than they can emit, leading to a more complicated dislocation structure around the bubble.

Authors:
 [1];  [1];  [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC). Advanced Scientific Computing Research (ASCR) (SC-21)
OSTI Identifier:
1334150
Report Number(s):
LA-UR-16-21485
Journal ID: ISSN 1536-1055; TRN: US1700132
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Fusion Science and Technology
Additional Journal Information:
Journal Volume: 71; Journal Issue: 1; Journal ID: ISSN 1536-1055
Publisher:
American Nuclear Society
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; Material Science; Magnetic Fusion Energy

Citation Formats

Sandoval, Luis, Perez, Danny, Uberuaga, Blas P., and Voter, Arthur Ford. Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten. United States: N. p., 2016. Web. doi:10.13182/FST16-116.
Sandoval, Luis, Perez, Danny, Uberuaga, Blas P., & Voter, Arthur Ford. Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten. United States. https://doi.org/10.13182/FST16-116
Sandoval, Luis, Perez, Danny, Uberuaga, Blas P., and Voter, Arthur Ford. Tue . "Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten". United States. https://doi.org/10.13182/FST16-116. https://www.osti.gov/servlets/purl/1334150.
@article{osti_1334150,
title = {Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten},
author = {Sandoval, Luis and Perez, Danny and Uberuaga, Blas P. and Voter, Arthur Ford},
abstractNote = {Here, the growth process of spherical helium bubbles located 6 nm below a (100) surface is studied using molecular dynamics and parallel replica dynamics simulations, over growth rates from 106 to 1012 helium atoms per second. Slower growth rates lead to a release of pressure and lower helium content as compared with fast growth cases. In addition, at slower growth rates, helium bubbles are not decorated by multiple dislocation loops, as these tend to merge or emit given sufficient time. At faster rates, dislocation loops nucleate faster than they can emit, leading to a more complicated dislocation structure around the bubble.},
doi = {10.13182/FST16-116},
journal = {Fusion Science and Technology},
number = 1,
volume = 71,
place = {United States},
year = {Tue Nov 15 00:00:00 EST 2016},
month = {Tue Nov 15 00:00:00 EST 2016}
}

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Works referencing / citing this record:

Helium in-plane migration behavior on 〈1 0 0〉 symmetric tilt grain boundaries in tungsten
journal, July 2018


Helium flux effects on bubble growth and surface morphology in plasma-facing tungsten from large-scale molecular dynamics simulations
journal, May 2019

  • Hammond, Karl D.; Naeger, Ian V.; Widanagamaachchi, Wathsala
  • Nuclear Fusion, Vol. 59, Issue 6
  • DOI: 10.1088/1741-4326/ab12f6

An Overview of Recent Standard and Accelerated Molecular Dynamics Simulations of Helium Behavior in Tungsten
journal, August 2019

  • Sandoval, Luis; Perez, Danny; Uberuaga, Blas P.
  • Materials, Vol. 12, Issue 16
  • DOI: 10.3390/ma12162500