Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Jiang, H. X.; Lin, Jing Yu

doi:10.1149/2.0031702jss

Title: Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Abstract

This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronicmore » devices.« less

Authors:

Jiang, H. X. ^[1]; Lin, Jing Yu ^[1]

Texas Tech Univ., Lubbock, TX (United States)

Publication Date:: Wed Sep 07 00:00:00 EDT 2016

Research Org.:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security

OSTI Identifier:: 1330681

Grant/Contract Number:: NA0002927

Resource Type:: Accepted Manuscript

Journal Name:: ECS Journal of Solid State Science and Technology

Additional Journal Information:: Journal Volume: 6; Journal Issue: 2; Journal ID: ISSN 2162-8769

Publisher:: Electrochemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; wide bandgap semiconductors; boron nitride; solid-state deep UV and neutron detectors; detectors; hexagonal boron nitride; MOCVD; optical properties of semiconductors; pholuminescence

Citation Formats


                    Jiang, H. X., and Lin, Jing Yu. Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications.  United States: N. p., 2016. 
Web.  doi:10.1149/2.0031702jss.

Copy to clipboard


                    Jiang, H. X., & Lin, Jing Yu. Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications.  United States.  https://doi.org/10.1149/2.0031702jss

Copy to clipboard


                    Jiang, H. X., and Lin, Jing Yu. Wed .  
"Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications".  United States.  https://doi.org/10.1149/2.0031702jss.  https://www.osti.gov/servlets/purl/1330681.

Copy to clipboard


                    
@article{osti_1330681,

  title        = {Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications},

  author       = {Jiang, H. X. and Lin, Jing Yu},

  abstractNote = {This paper provides a brief overview on recent advances made in authors’ laboratory in epitaxial growth and optical studies of hexagonal boron nitride (h-BN) epilayers and heterostructures. Photoluminescence spectroscopy has been employed to probe the optical properties of h-BN. It was observed that the near band edge emission of h-BN is unusually high and is more than two orders of magnitude higher than that of high quality AlN epilayers. It was shown that the unique quasi-2D nature induced by the layered structure of h-BN results in high optical absorption and emission. The impurity related and near band-edge transitions in h-BN epilayers were probed for materials synthesized under varying ammonia flow rates. Our results have identified that the most dominant impurities and deep level defects in h-BN epilayers are related to nitrogen vacancies. By growing h-BN under high ammonia flow rates, nitrogen vacancy related defects can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. Deep UV and thermal neutron detectors based on h-BN epilayers were shown to possess unique features. Lastly, it is our belief that h-BN will lead to many potential applications from deep UV emitters and detectors, radiation detectors, to novel 2D photonic and electronic devices.},

  doi          = {10.1149/2.0031702jss},

  journal      = {ECS Journal of Solid State Science and Technology},

  number       = 2,

  volume       = 6,

  place        = {United States},

  year         = {Wed Sep 07 00:00:00 EDT 2016},

  month        = {Wed Sep 07 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1149/2.0031702jss

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 58 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

The Blue Laser Diode
book, January 2000

Nakamura, Shuji; Pearton, Stephen; Fasol, Gerhard
DOI: 10.1007/978-3-662-04156-7

Arnaud, Lebègue, Rabiller, and Alouani Reply:
journal, May 2008

Arnaud, B.; Lebègue, S.; Rabiller, P.
Physical Review Letters, Vol. 100, Issue 18
DOI: 10.1103/PhysRevLett.100.189702

Comment on “Huge Excitonic Effects in Layered Hexagonal Boron Nitride”
journal, May 2008

Wirtz, Ludger; Marini, Andrea; Grüning, Myrta
Physical Review Letters, Vol. 100, Issue 18
DOI: 10.1103/PhysRevLett.100.189701

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products
journal, May 2015

Doan, T. C.; Majety, S.; Grenadier, S.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 783
DOI: 10.1016/j.nima.2015.02.045

The origin of deep-level impurity transitions in hexagonal boron nitride
journal, January 2015

Du, X. Z.; Li, J.; Lin, J. Y.
Applied Physics Letters, Vol. 106, Issue 2
DOI: 10.1063/1.4905908

Hexagonal boron nitride for deep ultraviolet photonic devices
journal, June 2014

Jiang, H. X.; Lin, J. Y.
Semiconductor Science and Technology, Vol. 29, Issue 8
DOI: 10.1088/0268-1242/29/8/084003

Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride
journal, January 1966

Lynch, R. W.; Drickamer, H. G.
The Journal of Chemical Physics, Vol. 44, Issue 1
DOI: 10.1063/1.1726442

Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films
journal, July 2014

He, B.; Qiu, M.; Yuen, M. F.
Applied Physics Letters, Vol. 105, Issue 1
DOI: 10.1063/1.4887007

Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy
journal, October 2009

Alem, Nasim; Erni, Rolf; Kisielowski, Christian
Physical Review B, Vol. 80, Issue 15
DOI: 10.1103/PhysRevB.80.155425

Boron Nitride Nanotubes
journal, August 1995

Chopra, N. G.; Luyken, R. J.; Cherrey, K.
Science, Vol. 269, Issue 5226
DOI: 10.1126/science.269.5226.966

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
journal, April 2008

Imura, Masataka; Sugimura, Hiroki; Okada, Narihito
Journal of Crystal Growth, Vol. 310, Issue 7-9
DOI: 10.1016/j.jcrysgro.2007.11.206

Defect-related photoluminescence of hexagonal boron nitride
journal, October 2008

Museur, Luc; Feldbach, Eduard; Kanaev, Andrei
Physical Review B, Vol. 78, Issue 15
DOI: 10.1103/PhysRevB.78.155204

Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal
journal, May 2009

Watanabe, Kenji; Taniguchi, Takashi
Physical Review B, Vol. 79, Issue 19
DOI: 10.1103/PhysRevB.79.193104

Huge Excitonic Effects in Layered Hexagonal Boron Nitride
journal, January 2006

Arnaud, B.; Lebègue, S.; Rabiller, P.
Physical Review Letters, Vol. 96, Issue 2
DOI: 10.1103/PhysRevLett.96.026402

Realization of highly efficient hexagonal boron nitride neutron detectors
journal, August 2016

Maity, A.; Doan, T. C.; Li, J.
Applied Physics Letters, Vol. 109, Issue 7
DOI: 10.1063/1.4960522

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

Dean, C. R.; Young, A. F.; Meric, I.
Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
DOI: 10.1038/nnano.2010.172

Electrical transport properties of Si-doped hexagonal boron nitride epilayers
journal, December 2013

Majety, S.; Doan, T. C.; Li, J.
AIP Advances, Vol. 3, Issue 12
DOI: 10.1063/1.4860949

Defect and impurity properties of hexagonal boron nitride: A first-principles calculation
journal, December 2012

Huang, Bing; Lee, Hoonkyung
Physical Review B, Vol. 86, Issue 24
DOI: 10.1103/PhysRevB.86.245406

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009

Nakarmi, M. L.; Nepal, N.; Lin, J. Y.
Applied Physics Letters, Vol. 94, Issue 9, Article No. 091903
DOI: 10.1063/1.3094754

III-nitride blue and ultraviolet photonic crystal light emitting diodes
journal, January 2004

Oder, T. N.; Kim, K. H.; Lin, J. Y.
Applied Physics Letters, Vol. 84, Issue 4
DOI: 10.1063/1.1644050

Two-dimensional excitons in three-dimensional hexagonal boron nitride
journal, November 2013

Cao, X. K.; Clubine, B.; Edgar, J. H.
Applied Physics Letters, Vol. 103, Issue 19
DOI: 10.1063/1.4829026

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
journal, October 2012

Li, J.; Majety, S.; Dahal, R.
Applied Physics Letters, Vol. 101, Issue 17
DOI: 10.1063/1.4764533

Band-edge exciton states in AlN single crystals and epitaxial layers
journal, January 2004

Chen, L.; Skromme, B. J.; Dalmau, R. F.
Applied Physics Letters, Vol. 85, Issue 19
DOI: 10.1063/1.1818733

Band structure and fundamental optical transitions in wurtzite AlN
journal, December 2003

Li, J.; Nam, K. B.; Nakarmi, M. L.
Applied Physics Letters, Vol. 83, Issue 25
DOI: 10.1063/1.1633965

Excitons in Boron Nitride Nanotubes: Dimensionality Effects
journal, March 2006

Wirtz, Ludger; Marini, Andrea; Rubio, Angel
Physical Review Letters, Vol. 96, Issue 12
DOI: 10.1103/PhysRevLett.96.126104

Point defects in hexagonal boron nitride. II. Theoretical studies
journal, March 1975

Zunger, A.; Katzir, A.
Physical Review B, Vol. 11, Issue 6
DOI: 10.1103/PhysRevB.11.2378

The origins of near band-edge transitions in hexagonal boron nitride epilayers
journal, February 2016

Du, X. Z.; Li, J.; Lin, J. Y.
Applied Physics Letters, Vol. 108, Issue 5
DOI: 10.1063/1.4941540

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
journal, May 2004

Watanabe, Kenji; Taniguchi, Takashi; Kanda, Hisao
Nature Materials, Vol. 3, Issue 6
DOI: 10.1038/nmat1134

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride
journal, May 1997

Jiménez, I.; Jankowski, A. F.; Terminello, L. J.
Physical Review B, Vol. 55, Issue 18
DOI: 10.1103/PhysRevB.55.12025

Hexagonal boron nitride grown by MOVPE
journal, November 2008

Kobayashi, Y.; Akasaka, T.; Makimoto, T.
Journal of Crystal Growth, Vol. 310, Issue 23
DOI: 10.1016/j.jcrysgro.2008.07.057

The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
journal, August 1978

Perry, P. B.; Rutz, R. F.
Applied Physics Letters, Vol. 33, Issue 4
DOI: 10.1063/1.90354

Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
journal, February 2007

Silly, M. G.; Jaffrennou, P.; Barjon, J.
Physical Review B, Vol. 75, Issue 8
DOI: 10.1103/PhysRevB.75.085205

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
journal, August 2007

Kubota, Y.; Watanabe, K.; Tsuda, O.
Science, Vol. 317, Issue 5840
DOI: 10.1126/science.1144216

Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
journal, January 2014

Chubarov, M.; Pedersen, H.; Högberg, H.
CrystEngComm, Vol. 16, Issue 24
DOI: 10.1039/c4ce00381k

Van der Waals heterostructures
journal, July 2013

Geim, A. K.; Grigorieva, I. V.
Nature, Vol. 499, Issue 7459, p. 419-425
DOI: 10.1038/nature12385

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B _x C _y N _z Nanotubes
journal, April 2004

Wu, J.; Han, Wei-Qiang; Walukiewicz, W.
Nano Letters, Vol. 4, Issue 4
DOI: 10.1021/nl049862e

Coupling of excitons and defect states in boron-nitride nanostructures
journal, April 2011

Attaccalite, C.; Bockstedte, M.; Marini, A.
Physical Review B, Vol. 83, Issue 14
DOI: 10.1103/PhysRevB.83.144115

Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors
journal, March 2007

Uher, J.; Pospisil, S.; Linhart, V.
Applied Physics Letters, Vol. 90, Issue 12
DOI: 10.1063/1.2713869

Origin of the Variation of Exciton Binding Energy in Semiconductors
journal, January 2013

Dvorak, Marc; Wei, Su-Huai; Wu, Zhigang
Physical Review Letters, Vol. 110, Issue 1
DOI: 10.1103/PhysRevLett.110.016402

Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
journal, December 2007

Jaffrennou, P.; Barjon, J.; Lauret, J. -S.
Journal of Applied Physics, Vol. 102, Issue 11
DOI: 10.1063/1.2821413

Growth and photoluminescence studies of Zn-doped AlN epilayers
journal, November 2006

Nepal, N.; Nakarmi, M. L.; Jang, H. U.
Applied Physics Letters, Vol. 89, Issue 19
DOI: 10.1063/1.2387869

Graphene based heterostructures
journal, August 2012

Dean, C.; Young, A. F.; Wang, L.
Solid State Communications, Vol. 152, Issue 15
DOI: 10.1016/j.ssc.2012.04.021

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
journal, November 1992

Asif Khan, M.; Kuznia, J. N.; Skogman, R. A.
Applied Physics Letters, Vol. 61, Issue 21
DOI: 10.1063/1.108144

Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
journal, April 1997

Sugino, Takashi; Tanioka, Kazuhiko; Kawasaki, Seiji
Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4B
DOI: 10.1143/JJAP.36.L463

Exciton optical transitions in a hexagonal boron nitride single crystal
journal, May 2011

Museur, L.; Brasse, G.; Pierret, A.
physica status solidi (RRL) - Rapid Research Letters, Vol. 5, Issue 5-6
DOI: 10.1002/pssr.201105190

First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer
journal, May 2012

Wang, Vei; Ma, Ning; Mizuseki, Hiroshi
Solid State Communications, Vol. 152, Issue 9
DOI: 10.1016/j.ssc.2012.01.034

Hexagonal boron nitride and 6H-SiC heterostructures
journal, May 2013

Majety, S.; Li, J.; Zhao, W. P.
Applied Physics Letters, Vol. 102, Issue 21
DOI: 10.1063/1.4808365

Correlation between optical and electrical properties of Mg-doped AlN epilayers
journal, October 2006

Nakarmi, M. L.; Nepal, N.; Ugolini, C.
Applied Physics Letters, Vol. 89, Issue 15
DOI: 10.1063/1.2362582

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Britnell, L.; Gorbachev, R. V.; Jalil, R.
Science, Vol. 335, Issue 6071
DOI: 10.1126/science.1218461

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
journal, March 2003

Nam, K. B.; Li, J.; Nakarmi, M. L.
Applied Physics Letters, Vol. 82, Issue 11
DOI: 10.1063/1.1559659

Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
journal, July 2006

Kawanishi, Hideo; Senuma, Masanori; Nukui, Takeaki
Applied Physics Letters, Vol. 89, Issue 4
DOI: 10.1063/1.2236792

Band-edge transitions in hexagonal boron nitride epilayers
journal, July 2012

Majety, S.; Cao, X. K.; Li, J.
Applied Physics Letters, Vol. 101, Issue 5
DOI: 10.1063/1.4742194

Near band-gap photoluminescence properties of hexagonal boron nitride
journal, May 2008

Museur, Luc; Kanaev, Andrei
Journal of Applied Physics, Vol. 103, Issue 10
DOI: 10.1063/1.2925685

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
journal, June 2014

Doan, T. C.; Majety, S.; Grenadier, S.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 748
DOI: 10.1016/j.nima.2014.02.031

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
journal, August 2010

Song, Li; Ci, Lijie; Lu, Hao
Nano Letters, Vol. 10, Issue 8, p. 3209-3215
DOI: 10.1021/nl1022139

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
journal, July 2008

Kim, Hee Jin; Choi, Suk; Yoo, Dongwon
Applied Physics Letters, Vol. 93, Issue 2
DOI: 10.1063/1.2959064

Correlation between optoelectronic and structural properties and epilayer thickness of AlN
journal, June 2007

Pantha, B. N.; Dahal, R.; Nakarmi, M. L.
Applied Physics Letters, Vol. 90, Issue 24
DOI: 10.1063/1.2747662

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
journal, August 2003

Nam, K. B.; Nakarmi, M. L.; Li, J.
Applied Physics Letters, Vol. 83, Issue 5
DOI: 10.1063/1.1594833

Origin of the significantly enhanced optical transitions in layered boron nitride
journal, October 2012

Huang, Bing; Cao, X. K.; Jiang, H. X.
Physical Review B, Vol. 86, Issue 15
DOI: 10.1103/PhysRevB.86.155202

Die Isotopenh�ufigkeit des Bors. Massenspektrometrische Untersuchung der Elektronensto�produkte von BF3 und BCl3
journal, June 1950

Osberghaus, O.
Zeitschrift f�r Physik, Vol. 128, Issue 3
DOI: 10.1007/BF01339437

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
journal, May 2011

Dahal, R.; Li, J.; Majety, S.
Applied Physics Letters, Vol. 98, Issue 21
DOI: 10.1063/1.3593958

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

Nam, K. B.; Li, J.; Nakarmi, M. L.
Applied Physics Letters, Vol. 84, Issue 25
DOI: 10.1063/1.1765208

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
journal, February 2005

Nakarmi, M. L.; Kim, K. H.; Khizar, M.
Applied Physics Letters, Vol. 86, Issue 9
DOI: 10.1063/1.1879098

Study of defects in wide band gap semiconductors by electron paramagnetic resonance
journal, April 1993

Fanciulli, M.; Moustakas, T. D.
Physica B: Condensed Matter, Vol. 185, Issue 1-4
DOI: 10.1016/0921-4526(93)90242-X

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
journal, February 2012

Majety, S.; Li, J.; Cao, X. K.
Applied Physics Letters, Vol. 100, Issue 6
DOI: 10.1063/1.3682523

Defect states of complexes involving a vacancy on the boron site in boronitrene
journal, December 2011

Ngwenya, T. B.; Ukpong, A. M.; Chetty, N.
Physical Review B, Vol. 84, Issue 24
DOI: 10.1103/PhysRevB.84.245425

Stability of native defects in hexagonal and cubic boron nitride
journal, March 2001

Orellana, Walter; Chacham, H.
Physical Review B, Vol. 63, Issue 12
DOI: 10.1103/PhysRevB.63.125205

Fine Structure Constant Defines Visual Transparency of Graphene
journal, June 2008

Nair, R. R.; Blake, P.; Grigorenko, A. N.
Science, Vol. 320, Issue 5881
DOI: 10.1126/science.1156965

An X-ray study of boron nitride
journal, May 1952

Pease, R. S.
Acta Crystallographica, Vol. 5, Issue 3
DOI: 10.1107/S0365110X52001064

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure.
journal, November 2007

Kubota, Yoichi; Watanabe, Kenji; Tsuda, Osamu
ChemInform, Vol. 38, Issue 45
DOI: 10.1002/chin.200745012

Boron nitride nanotubes
journal, January 1998

Loiseau, A.; Willaime, F.; Demoncy, N.
Carbon, Vol. 36, Issue 5-6
DOI: 10.1016/s0008-6223(98)00040-2

Study of defects in wide band gap semiconductors by electron paramagnetic resonance
book, January 1993

Fanciullia, M.; Moustakasb, T. D.
Wide-Band-Gap Semiconductors
DOI: 10.1016/b978-0-444-81573-6.50037-2

The Blue Laser Diode
book, January 1997

Nakamura, Shuji; Fasol, Gerhard
DOI: 10.1007/978-3-662-03462-0

Defect-related photoluminescence of hexagonal boron nitride
text, January 2008

Museur, Luc; Eduard, Feldbach; Kanaev, A. V.
arXiv
DOI: 10.48550/arxiv.0810.3989

Coupling of excitons and defect states in boron-nitride nanostructures
text, January 2011

Attaccalite, C.; Bockstedte, M.; Marini, A.
arXiv
DOI: 10.48550/arxiv.1103.2628

Works referencing / citing this record:

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications
journal, September 2019

Yu, Jiadong; Wang, Lai; Hao, Zhibiao
Advanced Materials, Vol. 32, Issue 15
DOI: 10.1002/adma.201903407

Exploring point defects in hexagonal boron‐nitrogen monolayers
journal, March 2019

Korona, Tatiana; Chojecki, Michał
International Journal of Quantum Chemistry, Vol. 119, Issue 14
DOI: 10.1002/qua.25925

Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition
journal, April 2019

Jeong, Hokyeong; Kim, Dong Yeong; Kim, Jaewon
Scientific Reports, Vol. 9, Issue 1
DOI: 10.1038/s41598-019-42236-4

p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium
journal, January 2018

Sun, Feipeng; Hao, Zhuoran; Liu, Guozhen
Nanoscale, Vol. 10, Issue 9
DOI: 10.1039/c7nr08035b

Hexagonal boron nitride neutron detectors with high detection efficiencies
journal, January 2018

Maity, A.; Grenadier, S. J.; Li, J.
Journal of Applied Physics, Vol. 123, Issue 4
DOI: 10.1063/1.5017979

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers
journal, April 2018

Grenadier, S. J.; Maity, A.; Li, J.
Applied Physics Letters, Vol. 112, Issue 16
DOI: 10.1063/1.5026291

Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
journal, August 2019

Grenadier, S.; Maity, A.; Li, J.
Applied Physics Letters, Vol. 115, Issue 7
DOI: 10.1063/1.5097984

Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry
journal, February 2020

McKay, M. A.; Li, J.; Lin, J. Y.
Journal of Applied Physics, Vol. 127, Issue 5
DOI: 10.1063/1.5134908

Single crystalline boron rich B(Al)N alloys grown by MOVPE
journal, January 2020

Vuong, P.; Mballo, A.; Sundaram, S.
Applied Physics Letters, Vol. 116, Issue 4
DOI: 10.1063/1.5135505

Recent progress in plasma-assisted synthesis and modification of 2D materials
journal, April 2018

Han, Zhao Jun; Murdock, Adrian T.; Seo, Dong Han
2D Materials, Vol. 5, Issue 3
DOI: 10.1088/2053-1583/aabb81

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
journal, July 2018

Alias, Mohd Sharizal; Tangi, Malleswararao; Holguin-Lerma, Jorge A.
Journal of Nanophotonics, Vol. 12, Issue 04
DOI: 10.1117/1.jnp.12.043508

Electroluminescence from h-BN by using Al ₂ O ₃ /h-BN multiple heterostructure
journal, January 2019

Lee, Seung Hee; Jeong, Hokyeong; Kim, Dong Yeong
Optics Express, Vol. 27, Issue 14
DOI: 10.1364/oe.27.019692

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes
journal, June 2018

Cheng, Tin; Summerfield, Alex; Mellor, Christopher
Materials, Vol. 11, Issue 7
DOI: 10.3390/ma11071119

Conversionless efficient and broadband laser light diffusers for high brightness illumination applications
text, January 2020

Schütt, Fabian; Zapf, Maximilian; Signetti, Stefano
Apollo - University of Cambridge Repository
DOI: 10.17863/cam.66070

Similar Records in DOE PAGES and OSTI.GOV collections:

The origins of near band-edge transitions in hexagonal boron nitride epilayers

Journal Article Du, X. Z. ; Li, J. ; Lin, J. Y. ; ... - Applied Physics Letters

Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained.
https://doi.org/10.1063/1.4941540
Hexagonal boron nitride: Epitaxial growth and device applications

Journal Article Maity, A. ; Grenadier, S. J. ; Li, J. ; ... - Progress in Quantum Electronics

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10more »« less
https://doi.org/10.1016/j.pquantelec.2020.100302

Full Text Available
Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Journal Article Almohammad, M. ; Li, J. ; Lin, J. Y. ; ... - Applied Physics Letters

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O_N (oxygen residing on the nitrogen site) donors and themore »« less
https://doi.org/10.1063/5.0074409

Full Text Available
Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

Journal Article Grenadier, S. J. ; Maity, A. ; Li, J. ; ... - Applied Physics Letters

Photoluminescence emission spectroscopy and electrical transport measurements have been employed to study the origin and roles of oxygen impurities in hexagonal boron nitride (h-BN) epilayers grown on sapphire substrates. The temperature dependence of the electrical resistivity revealed the presence of a previously unnoticed impurity level of about 0.6 eV in h-BN epilayers grown at high temperatures. The findings suggested that in addition to the common nitrogen vacancy (V_N) shallow donors in h-BN, oxygen impurities diffused from sapphire substrates during high temperature growth also act as substitutional donors (O_N). The presence of O_N gives rise to an additional emission peak inmore »« less
Cited by 31
https://doi.org/10.1063/1.5026291

Full Text Available
Probing the surface oxidation process in hexagonal boron nitride epilayers

Journal Article Wang, Q. W. ; Li, J. ; Lin, J. Y. ; ... - AIP Advances

Thermal neutron detectors based on hexagonal boron nitride (h-BN) epilayers have demonstrated a record high efficiency among solid-state detectors at 58%. It was found that the performance of h-BN detectors is profoundly influenced by charge recombination at the surfaces. The dynamic process of surface oxidation in h-BN epilayers has been probed by x-ray photoelectron spectroscopy. The spectra of high-resolution (0.1 eV) scans indicated that the linewidth of the B 1s peak at 190.6 eV increased and the peak intensity decreased with an increase in exposure time in-air (t_air). The main B 1s peak at 190.6 eV evolved into multiple peaksmore »« less
Cited by 3
https://doi.org/10.1063/1.5134993

Full Text Available

Similar Records

Title: Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Abstract

Citation Formats

The Blue Laser Diode book, January 2000

Arnaud, Lebègue, Rabiller, and Alouani Reply: journal, May 2008

Comment on “Huge Excitonic Effects in Layered Hexagonal Boron Nitride” journal, May 2008

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products journal, May 2015

The origin of deep-level impurity transitions in hexagonal boron nitride journal, January 2015

Hexagonal boron nitride for deep ultraviolet photonic devices journal, June 2014

Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride journal, January 1966

Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films journal, July 2014

Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy journal, October 2009

Boron Nitride Nanotubes journal, August 1995

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates journal, April 2008

Defect-related photoluminescence of hexagonal boron nitride journal, October 2008

Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal journal, May 2009

Huge Excitonic Effects in Layered Hexagonal Boron Nitride journal, January 2006

Realization of highly efficient hexagonal boron nitride neutron detectors journal, August 2016

Boron nitride substrates for high-quality graphene electronics journal, August 2010

Electrical transport properties of Si-doped hexagonal boron nitride epilayers journal, December 2013

Defect and impurity properties of hexagonal boron nitride: A first-principles calculation journal, December 2012

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys journal, March 2009

III-nitride blue and ultraviolet photonic crystal light emitting diodes journal, January 2004

Two-dimensional excitons in three-dimensional hexagonal boron nitride journal, November 2013

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers journal, October 2012

Band-edge exciton states in AlN single crystals and epitaxial layers journal, January 2004

Band structure and fundamental optical transitions in wurtzite AlN journal, December 2003

Excitons in Boron Nitride Nanotubes: Dimensionality Effects journal, March 2006

Point defects in hexagonal boron nitride. II. Theoretical studies journal, March 1975

The origins of near band-edge transitions in hexagonal boron nitride epilayers journal, February 2016

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal journal, May 2004

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride journal, May 1997

Hexagonal boron nitride grown by MOVPE journal, November 2008

The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process journal, August 1978

Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements journal, February 2007

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure journal, August 2007

Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates journal, January 2014

Van der Waals heterostructures journal, July 2013

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B x C y N z Nanotubes journal, April 2004

Coupling of excitons and defect states in boron-nitride nanostructures journal, April 2011

Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors journal, March 2007

Origin of the Variation of Exciton Binding Energy in Semiconductors journal, January 2013

Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy journal, December 2007

Growth and photoluminescence studies of Zn-doped AlN epilayers journal, November 2006

Graphene based heterostructures journal, August 2012

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates journal, November 1992

Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition journal, April 1997

Exciton optical transitions in a hexagonal boron nitride single crystal journal, May 2011

First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer journal, May 2012

Hexagonal boron nitride and 6H-SiC heterostructures journal, May 2013

Correlation between optical and electrical properties of Mg-doped AlN epilayers journal, October 2006

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures journal, February 2012

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers journal, March 2003

Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers journal, July 2006

Band-edge transitions in hexagonal boron nitride epilayers journal, July 2012

Near band-gap photoluminescence properties of hexagonal boron nitride journal, May 2008

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers journal, June 2014

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers journal, August 2010

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition journal, July 2008

Correlation between optoelectronic and structural properties and epilayer thickness of AlN journal, June 2007

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence journal, August 2003

Origin of the significantly enhanced optical transitions in layered boron nitride journal, October 2012

Die Isotopenh�ufigkeit des Bors. Massenspektrometrische Untersuchung der Elektronensto�produkte von BF3 und BCl3 journal, June 1950

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material journal, May 2011

Unique optical properties of AlGaN alloys and related ultraviolet emitters journal, June 2004

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys journal, February 2005

Study of defects in wide band gap semiconductors by electron paramagnetic resonance journal, April 1993

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics journal, February 2012

Defect states of complexes involving a vacancy on the boron site in boronitrene journal, December 2011

Stability of native defects in hexagonal and cubic boron nitride journal, March 2001

Fine Structure Constant Defines Visual Transparency of Graphene journal, June 2008

An X-ray study of boron nitride journal, May 1952

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure. journal, November 2007

Boron nitride nanotubes journal, January 1998

Study of defects in wide band gap semiconductors by electron paramagnetic resonance book, January 1993

The Blue Laser Diode book, January 1997

Defect-related photoluminescence of hexagonal boron nitride text, January 2008

Coupling of excitons and defect states in boron-nitride nanostructures text, January 2011

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications journal, September 2019

Exploring point defects in hexagonal boron‐nitrogen monolayers journal, March 2019

The Blue Laser Diode
book, January 2000

Arnaud, Lebègue, Rabiller, and Alouani Reply:
journal, May 2008

Comment on “Huge Excitonic Effects in Layered Hexagonal Boron Nitride”
journal, May 2008

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products
journal, May 2015

The origin of deep-level impurity transitions in hexagonal boron nitride
journal, January 2015

Hexagonal boron nitride for deep ultraviolet photonic devices
journal, June 2014

Effect of High Pressure on the Lattice Parameters of Diamond, Graphite, and Hexagonal Boron Nitride
journal, January 1966

Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films
journal, July 2014

Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy
journal, October 2009

Boron Nitride Nanotubes
journal, August 1995

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
journal, April 2008

Defect-related photoluminescence of hexagonal boron nitride
journal, October 2008

Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal
journal, May 2009

Huge Excitonic Effects in Layered Hexagonal Boron Nitride
journal, January 2006

Realization of highly efficient hexagonal boron nitride neutron detectors
journal, August 2016

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

Electrical transport properties of Si-doped hexagonal boron nitride epilayers
journal, December 2013

Defect and impurity properties of hexagonal boron nitride: A first-principles calculation
journal, December 2012

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
journal, March 2009

III-nitride blue and ultraviolet photonic crystal light emitting diodes
journal, January 2004

Two-dimensional excitons in three-dimensional hexagonal boron nitride
journal, November 2013

Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
journal, October 2012

Band-edge exciton states in AlN single crystals and epitaxial layers
journal, January 2004

Band structure and fundamental optical transitions in wurtzite AlN
journal, December 2003

Excitons in Boron Nitride Nanotubes: Dimensionality Effects
journal, March 2006

Point defects in hexagonal boron nitride. II. Theoretical studies
journal, March 1975

The origins of near band-edge transitions in hexagonal boron nitride epilayers
journal, February 2016

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
journal, May 2004

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride
journal, May 1997

Hexagonal boron nitride grown by MOVPE
journal, November 2008

The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process
journal, August 1978

Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
journal, February 2007

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure
journal, August 2007

Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
journal, January 2014

Van der Waals heterostructures
journal, July 2013

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B _x C _y N _z Nanotubes
journal, April 2004

Coupling of excitons and defect states in boron-nitride nanostructures
journal, April 2011

Efficiency of composite boron nitride neutron detectors in comparison with helium-3 detectors
journal, March 2007

Origin of the Variation of Exciton Binding Energy in Semiconductors
journal, January 2013

Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
journal, December 2007

Growth and photoluminescence studies of Zn-doped AlN epilayers
journal, November 2006

Graphene based heterostructures
journal, August 2012

Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
journal, November 1992

Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition
journal, April 1997

Exciton optical transitions in a hexagonal boron nitride single crystal
journal, May 2011

First-principles study of intrinsic defect properties in hexagonal BN bilayer and monolayer
journal, May 2012

Hexagonal boron nitride and 6H-SiC heterostructures
journal, May 2013

Correlation between optical and electrical properties of Mg-doped AlN epilayers
journal, October 2006

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
journal, March 2003

Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
journal, July 2006

Band-edge transitions in hexagonal boron nitride epilayers
journal, July 2012

Near band-gap photoluminescence properties of hexagonal boron nitride
journal, May 2008

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers
journal, June 2014

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
journal, August 2010

Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
journal, July 2008

Correlation between optoelectronic and structural properties and epilayer thickness of AlN
journal, June 2007

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
journal, August 2003

Origin of the significantly enhanced optical transitions in layered boron nitride
journal, October 2012

Die Isotopenh�ufigkeit des Bors. Massenspektrometrische Untersuchung der Elektronensto�produkte von BF3 und BCl3
journal, June 1950

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
journal, May 2011

Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004

Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
journal, February 2005

Study of defects in wide band gap semiconductors by electron paramagnetic resonance
journal, April 1993

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
journal, February 2012

Defect states of complexes involving a vacancy on the boron site in boronitrene
journal, December 2011

Stability of native defects in hexagonal and cubic boron nitride
journal, March 2001

Fine Structure Constant Defines Visual Transparency of Graphene
journal, June 2008

An X-ray study of boron nitride
journal, May 1952

Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure.
journal, November 2007

Boron nitride nanotubes
journal, January 1998

Study of defects in wide band gap semiconductors by electron paramagnetic resonance
book, January 1993

The Blue Laser Diode
book, January 1997

Defect-related photoluminescence of hexagonal boron nitride
text, January 2008

Coupling of excitons and defect states in boron-nitride nanostructures
text, January 2011

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications
journal, September 2019

Exploring point defects in hexagonal boron‐nitrogen monolayers
journal, March 2019

Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition
journal, April 2019

p-Type conductivity of hexagonal boron nitride as a dielectrically tunable monolayer: modulation doping with magnesium
journal, January 2018

Hexagonal boron nitride neutron detectors with high detection efficiencies
journal, January 2018