Isotropic plasma etching of Ge Si and SiNx films

Henry, Michael David; Douglas, Erica Ann

doi:10.1116/1.4961944

Title: Isotropic plasma etching of Ge Si and SiN_x films

Full Record
Other Related Research

Abstract

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF₃ and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN_x are described with etch rate reductions achieved by adjusting plasma chemistry with O₂. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN_x etch rates while retarding Ge etching.

Authors:

Henry, Michael David ^[1]; Douglas, Erica Ann ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Wed Aug 31 00:00:00 EDT 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1323884

Report Number(s):: SAND-2016-4884J
Journal ID: ISSN 2166-2746; 640682; TRN: US1700144

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 34; Journal Issue: 5; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Germanium; Plasma etching; Silicon

Citation Formats


                    Henry, Michael David, and Douglas, Erica Ann. Isotropic plasma etching of Ge Si and SiNx films.  United States: N. p., 2016. 
Web.  doi:10.1116/1.4961944.

Copy to clipboard


                    Henry, Michael David, & Douglas, Erica Ann. Isotropic plasma etching of Ge Si and SiNx films.  United States.  https://doi.org/10.1116/1.4961944

Copy to clipboard


                    Henry, Michael David, and Douglas, Erica Ann. Wed .  
"Isotropic plasma etching of Ge Si and SiNx films".  United States.  https://doi.org/10.1116/1.4961944.  https://www.osti.gov/servlets/purl/1323884.

Copy to clipboard


                    
@article{osti_1323884,

  title        = {Isotropic plasma etching of Ge Si and SiNx films},

  author       = {Henry, Michael David and Douglas, Erica Ann},

  abstractNote = {This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.},

  doi          = {10.1116/1.4961944},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 5,

  volume       = 34,

  place        = {United States},

  year         = {Wed Aug 31 00:00:00 EDT 2016},

  month        = {Wed Aug 31 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1116/1.4961944

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 8 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Highly selective Si ₃ N ₄ /SiO ₂ etching using an NF ₃ /N ₂ /O ₂ /H ₂ remote plasma. I. Plasma source and critical fluxes

Journal Article Volynets, Vladimir ; Barsukov, Yuri ; Kim, Gonjun ; ... - Journal of Vacuum Science and Technology A

Highly selective plasma etching of silicon nitride (Si₃N₄), while not etching silicon dioxide (SiO₂), is a critical step in the fabrication of microelectronics devices. In many applications, this etching must be damage-free and isotropic, which then motivates the use of remote plasmas where the reactants interacting with the substrate are dominantly neutral species. In this paper and Paper II, mechanisms for highly selective Si₃N₄ etching in remote plasmas are discussed based on results from experiments and simulations. It has been shown experimentally that high Si₃N₄/SiO₂ etch selectivity (≈380) can be achieved in the downstream effluent of an NF₃/N₂/O₂/H₂ plasma. Themore »« less
https://doi.org/10.1116/1.5125568

Full Text Available
Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

Journal Article Kaler, Sanbir S. ; Lou, Qiaowei ; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore »« less
https://doi.org/10.1116/1.4949261
Highly selective Si ₃ N ₄ /SiO ₂ etching using an NF ₃ /N ₂ /O ₂ /H ₂ remote plasma. II. Surface reaction mechanism

Journal Article Jung, Ji-Eun ; Barsukov, Yuri ; Volynets, Vladimir ; ... - Journal of Vacuum Science and Technology A

Developing processes for highly selective etching of silicon nitride (Si₃ N₄) with respect to silicon dioxide (SiO₂) is a major priority for semiconductor fabrication processing. In this paper and in Paper I [Volynets et al., J. Vac. Sci. Technol. A 38, 023007 (2020)], mechanisms are discussed for highly selective Si3N4 etching in a remote plasma based on experimental and theoretical investigations. The Si₃N₄/SiO₂ etch selectivity of up to 380 was experimentally produced using a remote plasma sustained in NF₃/N₂/O₂/H₂ mixtures. A selectivity strongly depends on the flow rate of H₂, an effect attributed to the formation of HF molecules inmore »« less
https://doi.org/10.1116/1.5125569

Full Text Available
Trilayer lift-off metallization process using low temperature deposited SiN[sub x]

Journal Article Lothian, J R ; Ren, F ; Pearton, S J ; ...

A trilevel resist scheme using low temperature (< 50[degrees]C) deposited SiN, rather than Ge for the transfer layer has been developed. This allows use of an optical stepper for lithographic patterning of the emitter-base junctions in GaAs/AlGaAs heterojunction bipolar transistors where a conventional lift-off process using a single level resist often leads to the presence of shorts between metallizations. The plasma-enhanced chemically vapor deposited (PECVD) SiN[sub x] shows a slightly larger degree of Si-H bonding compared to nitride deposited at higher temperature (275[degrees]C), and is under compressive stress ([approximately]5[times]10[sup 10] dyn cm[sup [minus]1]) which is considerably relieved upon thermal cyclingmore »« less
High rate and highly selective anisotropic etching for WSi{sub {ital x}}/poly-Si using electron cyclotron resonance plasma

Journal Article Nojiri, K ; Tsunokuni, K ; Yamazaki, K - Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

High rate and highly selective anisotropic etching for tungsten polycide (WSi{sub {ital x}}/poly-Si) has been developed by fully utilizing such advantages of the electron cyclotron resonance plasma etcher, as high plasma density and independent control of ion energy and plasma density. Highly anisotropic etching with a WSi{sub {ital x}}/poly-Si etch rate of 400 nm/min and a poly-Si/SiO{sub 2} selectivity of 50 was realized by adding O{sub 2} to Cl{sub 2} and reducing the ion energy. O{sub 2} addition increases the WSi{sub {ital x}} etch rate and reduces the SiO{sub 2} etch rate, keeping the poly-Si etch rate nearly constant. Thismore »« less
https://doi.org/10.1116/1.588558

Similar Records

Title: Isotropic plasma etching of Ge Si and SiNx films

Abstract

Citation Formats

Title: Isotropic plasma etching of Ge Si and SiN_x films