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Title: Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Abstract

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1]
+ Show Author Affiliations
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Oregon State Univ., Corvallis, OR (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab., Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1281671
Alternate Identifier(s):
OSTI ID: 1255463
Report Number(s):
LLNL-JRNL-689356
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC52-07NA27344; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; crystallization; liquid crystal layers; amorphous semiconductors; crystal growth; thin film growth

Citation Formats

Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States: N. p., 2016. Web. doi:10.1063/1.4953153.
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Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., & Campbell, G. H. Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. United States. https://doi.org/10.1063/1.4953153
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Li, T. T., Bayu Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., and Campbell, G. H. Fri . "Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films". United States. https://doi.org/10.1063/1.4953153. https://www.osti.gov/servlets/purl/1281671.
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@article{osti_1281671,
title = {Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films},
author = {Li, T. T. and Bayu Aji, L. B. and Heo, T. W. and Santala, M. K. and Kucheyev, S. O. and Campbell, G. H.},
abstractNote = {Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.},
doi = {10.1063/1.4953153},
journal = {Applied Physics Letters},
number = 22,
volume = 108,
place = {United States},
year = {Fri Jun 03 00:00:00 EDT 2016},
month = {Fri Jun 03 00:00:00 EDT 2016}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4953153
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Cited by: 10 works
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Figures / Tables:

Figure 1 Figure 1: (a) Bright field TEM image of the 33 nm as-deposited a-Ge thin film after crystallized by a single 3.3 μJ laser shot. The center of the laser creates Zone I, which has many sub-micron grains. Zone II has radially oriented grains extending over many microns. Zone III hasmore » grains oriented tangentially. (b) Time resolved images over the circled region in (a) at the time step, relative to the specimen laser heating, indicated on each frame. The migration of Zone II crystallization front is clearly visible and marked by the dotted line.« less
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    Works referencing / citing this record:

    High-Speed Electron Microscopy
    book, January 2019

    In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge
    journal, September 2019

    • Egan, G.; Rahn, T. T.; Rise, A. J.
    • Journal of Applied Physics, Vol. 126, Issue 10
    • DOI: 10.1063/1.5117845

    Si-integrated ultrathin films of phase-pure Y 3 Fe 5 O 12 (YIG) via novel two-step rapid thermal anneal
    journal, March 2017

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      Figures / Tables found in this record:

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