Shock compression of [001] single crystal silicon

Zhao, S.; Remington, B.; Hahn, E. N.; Kad, B.; Bringa, E. M.; Meyers, M. A.

doi:10.1140/epjst/e2016-02634-7

Title: Shock compression of [001] single crystal silicon

Abstract

In collaboration with LLNL and Caltech, experiments to test the strain rate and texture dependence of spall strength in tantalum were conducted at Janus in the Jupiter Laser Facility at LLNL from June-July 2014. Part of the laser shots were dedicated to reproducing data from the last set of spall experiments in 2012 and the rest of the laser shots were dedicated to produce new science on spall strength. Experiments were also conducted at the Omega Facility (LLE, U. of Rochester). The limits of spall strength were tested by increasing the strain rate and changing the texture of the samples. This research was successfully completed and a paper has just appeared in Acta materialia. Four papers on amorphization in Si, Ge, B4C, and SiC were published in leading journals. We have now demonstrated that amorphization is an important mechanism of inelastic deformation in covalently bonded solids under shock compression.

Authors:

Zhao, S. ^[1]; Remington, B. ^[2]; Hahn, E. N. ^[1]; Kad, B. ^[1]; Bringa, E. M. ^[3]; Meyers, M. A. ^[1]

Univ. of California, San Diego, La Jolla, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
National Univ. of Cuyo, Mendoza (Argentina); National Scientific and Technical Research Council (CONICET), Mendoza (Argentina)

Publication Date:: Mon Mar 14 00:00:00 EDT 2016

Research Org.:: Lawrence Livermore National Lab., Livermore, CA (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1281662

Alternate Identifier(s):: OSTI ID: 1462270

Report Number(s):: LLNL-JRNL-696497; DE-UCSD-NA0002080
Journal ID: ISSN 1951-6355

Grant/Contract Number:: AC52-07NA27344; NA0002080

Resource Type:: Accepted Manuscript

Journal Name:: European Physical Journal. Special Topics

Additional Journal Information:: Journal Volume: 225; Journal Issue: 2; Journal ID: ISSN 1951-6355

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; 42 ENGINEERING; laser shock; silicon; amorphization; molecular dynamics; Shock Compression Shock Surface Transmitted Shock Wave Clapeyron Slope

Citation Formats


                    Zhao, S., Remington, B., Hahn, E. N., Kad, B., Bringa, E. M., and Meyers, M. A. Shock compression of [001] single crystal silicon.  United States: N. p., 2016. 
Web.  doi:10.1140/epjst/e2016-02634-7.

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                    Zhao, S., Remington, B., Hahn, E. N., Kad, B., Bringa, E. M., & Meyers, M. A. Shock compression of [001] single crystal silicon.  United States.  https://doi.org/10.1140/epjst/e2016-02634-7

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                    Zhao, S., Remington, B., Hahn, E. N., Kad, B., Bringa, E. M., and Meyers, M. A. Mon .  
"Shock compression of [001] single crystal silicon".  United States.  https://doi.org/10.1140/epjst/e2016-02634-7.  https://www.osti.gov/servlets/purl/1281662.

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@article{osti_1281662,

  title        = {Shock compression of [001] single crystal silicon},

  author       = {Zhao, S. and Remington, B. and Hahn, E. N. and Kad, B. and Bringa, E. M. and Meyers, M. A.},

  abstractNote = {In collaboration with LLNL and Caltech, experiments to test the strain rate and texture dependence of spall strength in tantalum were conducted at Janus in the Jupiter Laser Facility at LLNL from June-July 2014. Part of the laser shots were dedicated to reproducing data from the last set of spall experiments in 2012 and the rest of the laser shots were dedicated to produce new science on spall strength. Experiments were also conducted at the Omega Facility (LLE, U. of Rochester). The limits of spall strength were tested by increasing the strain rate and changing the texture of the samples. This research was successfully completed and a paper has just appeared in Acta materialia. Four papers on amorphization in Si, Ge, B4C, and SiC were published in leading journals. We have now demonstrated that amorphization is an important mechanism of inelastic deformation in covalently bonded solids under shock compression.},

  doi          = {10.1140/epjst/e2016-02634-7},

  journal      = {European Physical Journal. Special Topics},

  number       = 2,

  volume       = 225,

  place        = {United States},

  year         = {Mon Mar 14 00:00:00 EDT 2016},

  month        = {Mon Mar 14 00:00:00 EDT 2016}

}

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Works referenced in this record:

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Similar Records

Title: Shock compression of [001] single crystal silicon

Abstract

Citation Formats

Axial Yield Strengths and Two Successive Phase Transition Stresses for Crystalline Silicon journal, April 1971

Rear surface spallation on single-crystal silicon in nanosecond laser micromachining journal, May 2005

Molecular dynamics simulations of shock-compressed single-crystal silicon journal, February 2014

Shock deformation of face-centred-cubic metals on subnanosecond timescales journal, September 2006

Dynamic Behavior of Materials book, September 1994

Development of bond-order potentials that can reproduce the elastic constants and melting point of silicon for classical molecular dynamics simulation journal, April 2007

Phase behavior and kinetics of a new bond-order potential for silicon journal, December 2008

Pressure and shear-induced amorphization of silicon journal, December 2015

Pressure-induced amorphization and an amorphous–amorphous transition in densified porous silicon journal, November 2001

Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide journal, January 2005

Use of Shock Waves in High-Pressure Physics journal, January 1965

Fast Parallel Algorithms for Short-Range Molecular Dynamics journal, March 1995

Reduction of Shear Strength and Phase-Transition in Shock-Loaded Silicon journal, June 1982

Empirical interatomic potential for silicon with improved elastic properties journal, November 1988

Effect of phase transition in shock-recovered silicon journal, January 2008

Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool journal, December 2009

Heterogeneous flow and brittle failure in shock-compressed silicon journal, October 2013

Response of thermites to dynamic high pressure and shear journal, June 2000

Multiscale dislocation dynamics analyses of laser shock peening in silicon single crystals journal, December 2006

Computer simulation of local order in condensed phases of silicon journal, April 1985

On the Speed of Reactions at High Pressures journal, February 1962

Shock launching in silicon studied with use of pulsed x-ray diffraction journal, June 1987

Shear localization and chemical reaction in high-strain, high-strain-rate deformation of Ti–Si powder mixtures journal, May 1998

Dislocation behavior in silicon crystal induced by laser shock peening: A multiscale simulation approach journal, November 2005

Effects of High Shearing Stress Combined with High Hydrostatic Pressure journal, November 1935

Study of the pressure distribution over rotatable bridgman anvils journal, January 1975

Anomalous Elastic Response of Silicon to Uniaxial Shock Compression on Nanosecond Time Scales journal, March 2001

Two-phase simulation of the crystalline silicon melting line at pressures from –1 to 3 GPa journal, August 2012

Axial Yield Strengths and Two Successive Phase Transition Stresses for Crystalline Silicon
journal, April 1971

Rear surface spallation on single-crystal silicon in nanosecond laser micromachining
journal, May 2005

Molecular dynamics simulations of shock-compressed single-crystal silicon
journal, February 2014

Shock deformation of face-centred-cubic metals on subnanosecond timescales
journal, September 2006

Dynamic Behavior of Materials
book, September 1994

Development of bond-order potentials that can reproduce the elastic constants and melting point of silicon for classical molecular dynamics simulation
journal, April 2007

Phase behavior and kinetics of a new bond-order potential for silicon
journal, December 2008

Pressure and shear-induced amorphization of silicon
journal, December 2015

Pressure-induced amorphization and an amorphous–amorphous transition in densified porous silicon
journal, November 2001

Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide
journal, January 2005

Use of Shock Waves in High-Pressure Physics
journal, January 1965

Fast Parallel Algorithms for Short-Range Molecular Dynamics
journal, March 1995

Reduction of Shear Strength and Phase-Transition in Shock-Loaded Silicon
journal, June 1982

Empirical interatomic potential for silicon with improved elastic properties
journal, November 1988

Effect of phase transition in shock-recovered silicon
journal, January 2008

Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool
journal, December 2009

Heterogeneous flow and brittle failure in shock-compressed silicon
journal, October 2013

Response of thermites to dynamic high pressure and shear
journal, June 2000

Multiscale dislocation dynamics analyses of laser shock peening in silicon single crystals
journal, December 2006

Computer simulation of local order in condensed phases of silicon
journal, April 1985

On the Speed of Reactions at High Pressures
journal, February 1962

Shock launching in silicon studied with use of pulsed x-ray diffraction
journal, June 1987

Shear localization and chemical reaction in high-strain, high-strain-rate deformation of Ti–Si powder mixtures
journal, May 1998

Dislocation behavior in silicon crystal induced by laser shock peening: A multiscale simulation approach
journal, November 2005

Effects of High Shearing Stress Combined with High Hydrostatic Pressure
journal, November 1935

Study of the pressure distribution over rotatable bridgman anvils
journal, January 1975

Anomalous Elastic Response of Silicon to Uniaxial Shock Compression on Nanosecond Time Scales
journal, March 2001

Two-phase simulation of the crystalline silicon melting line at pressures from –1 to 3 GPa
journal, August 2012