First-principles study of point defects at a semicoherent interface
Abstract
Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. Here, we show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single point defects do not delocalize, but remain compact near the interfacial plane in Cu-Nb multilayers. Lastly, we give a simple qualitative explanation for this difference on the basis of the well known limited transferability of empirical potentials.
- Authors:
-
- Uppsala Univ. (Sweden)
- Univ. of Tartu, Tartu (Estonia)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE; European Union (EU)
- OSTI Identifier:
- 1259290
- Grant/Contract Number:
- 2008LANL1026
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 4; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; structural properties; structure of solids and liquids; surfaces, interfaces and thin films
Citation Formats
Metsanurk, E., Tamm, A., Caro, A., Aabloo, A., and Klintenberg, M. First-principles study of point defects at a semicoherent interface. United States: N. p., 2014.
Web. doi:10.1038/srep07567.
Metsanurk, E., Tamm, A., Caro, A., Aabloo, A., & Klintenberg, M. First-principles study of point defects at a semicoherent interface. United States. https://doi.org/10.1038/srep07567
Metsanurk, E., Tamm, A., Caro, A., Aabloo, A., and Klintenberg, M. Fri .
"First-principles study of point defects at a semicoherent interface". United States. https://doi.org/10.1038/srep07567. https://www.osti.gov/servlets/purl/1259290.
@article{osti_1259290,
title = {First-principles study of point defects at a semicoherent interface},
author = {Metsanurk, E. and Tamm, A. and Caro, A. and Aabloo, A. and Klintenberg, M.},
abstractNote = {Most of the atomistic modeling of semicoherent metal-metal interfaces has so far been based on the use of semiempirical interatomic potentials. Here, we show that key conclusions drawn from previous studies are in contradiction with more precise ab-initio calculations. In particular we find that single point defects do not delocalize, but remain compact near the interfacial plane in Cu-Nb multilayers. Lastly, we give a simple qualitative explanation for this difference on the basis of the well known limited transferability of empirical potentials.},
doi = {10.1038/srep07567},
journal = {Scientific Reports},
number = ,
volume = 4,
place = {United States},
year = {Fri Dec 19 00:00:00 EST 2014},
month = {Fri Dec 19 00:00:00 EST 2014}
}
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Works referencing / citing this record:
Vacancy assisted He-interstitial clustering and their elemental interaction at fcc-bcc semicoherent metallic interface
journal, March 2018
- Saikia, Ujjal; Sahariah, Munima B.; González, César
- Scientific Reports, Vol. 8, Issue 1
Vacancy assisted He-interstitial clustering and their elemental interaction at fcc-bcc semicoherent metallic interface
journal, March 2018
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