Pressure-induced phase transition in
Abstract
Electrical resistivity measurements on La1–xSmxO0.5F0.5BiS2 (x = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature Tc of each sample significantly increases at a Sm-concentration dependent pressure Pt, indicating a pressure-induced phase transition from a low-Tc to a high-Tc phase. At ambient pressure, Tc increases dramatically from 2.8 K at x = 0.1 to 5.4 K at x = 0.8; however, the Tc values at P > Pt decrease slightly with x and Pt shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. Furthermore, these results suggest that the pressure dependence of Tc for the BiS2-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of Tc for SmO0.5F0.5BiS2 under pressure.
- Authors:
-
- Univ. of California, San Diego, La Jolla, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, San Diego, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1257505
- Alternate Identifier(s):
- OSTI ID: 1215778
- Grant/Contract Number:
- NA0002909; NA0001841; FG02-04ER46105
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 9; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Fang, Y., Yazici, D., White, B. D., and Maple, M. B. Pressure-induced phase transition in La1–xSmxO0.5F0.5BiS2. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.094507.
Fang, Y., Yazici, D., White, B. D., & Maple, M. B. Pressure-induced phase transition in La1–xSmxO0.5F0.5BiS2. United States. https://doi.org/10.1103/PhysRevB.92.094507
Fang, Y., Yazici, D., White, B. D., and Maple, M. B. Tue .
"Pressure-induced phase transition in La1–xSmxO0.5F0.5BiS2". United States. https://doi.org/10.1103/PhysRevB.92.094507. https://www.osti.gov/servlets/purl/1257505.
@article{osti_1257505,
title = {Pressure-induced phase transition in La1–xSmxO0.5F0.5BiS2},
author = {Fang, Y. and Yazici, D. and White, B. D. and Maple, M. B.},
abstractNote = {Electrical resistivity measurements on La1–xSmxO0.5F0.5BiS2 (x = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature Tc of each sample significantly increases at a Sm-concentration dependent pressure Pt, indicating a pressure-induced phase transition from a low-Tc to a high-Tc phase. At ambient pressure, Tc increases dramatically from 2.8 K at x = 0.1 to 5.4 K at x = 0.8; however, the Tc values at P > Pt decrease slightly with x and Pt shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. Furthermore, these results suggest that the pressure dependence of Tc for the BiS2-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of Tc for SmO0.5F0.5BiS2 under pressure.},
doi = {10.1103/PhysRevB.92.094507},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 9,
volume = 92,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}
Web of Science
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