Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory
Abstract
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
- Authors:
-
[1];
[1];
- Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
- Johns Hopkins Univ., Baltimore, MD (United States)
- Tohoku Univ., Sendai (Japan); Far Eastern Federal Univ., Vladivostok (Russia)
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1253329
- Alternate Identifier(s):
- OSTI ID: 1244608
- Grant/Contract Number:
- SC0014189; FG02-08ER46544
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 13; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; domain walls; antiferromagnetism; atomic force microscopy; electric fields; ferromagnetism
Citation Formats
Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., and Tretiakov, O. A. Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory. United States: N. p., 2016.
Web. doi:10.1063/1.4944996.
Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., & Tretiakov, O. A. Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory. United States. https://doi.org/10.1063/1.4944996
Belashchenko, K. D., Tchernyshyov, O., Kovalev, Alexey A., and Tretiakov, O. A. Wed .
"Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory". United States. https://doi.org/10.1063/1.4944996. https://www.osti.gov/servlets/purl/1253329.
@article{osti_1253329,
title = {Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory},
author = {Belashchenko, K. D. and Tchernyshyov, O. and Kovalev, Alexey A. and Tretiakov, O. A.},
abstractNote = {Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.},
doi = {10.1063/1.4944996},
journal = {Applied Physics Letters},
number = 13,
volume = 108,
place = {United States},
year = {Wed Mar 30 00:00:00 EDT 2016},
month = {Wed Mar 30 00:00:00 EDT 2016}
}
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