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Title: Graphene engineering by neon ion beams

Abstract

Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.

Authors:
 [1];  [2];  [2];  [2];  [2];  [1];  [2];  [2];  [2]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1247936
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 27; Journal Issue: 12; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene; helium ion microscopy; direct-write lithography; Kelvin probe force microscopy; band excitation force modulation microscopy; Raman; scanning probe microscopy

Citation Formats

Iberi, Vighter, Ievlev, Anton V., Vlassiouk, Ivan, Jesse, Stephen, Kalinin, Sergei V., Joy, David C., Rondinone, Adam J., Belianinov, Alex, and Ovchinnikova, Olga S. Graphene engineering by neon ion beams. United States: N. p., 2016. Web. doi:10.1088/0957-4484/27/12/125302.
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Iberi, Vighter, Ievlev, Anton V., Vlassiouk, Ivan, Jesse, Stephen, Kalinin, Sergei V., Joy, David C., Rondinone, Adam J., Belianinov, Alex, & Ovchinnikova, Olga S. Graphene engineering by neon ion beams. United States. https://doi.org/10.1088/0957-4484/27/12/125302
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Iberi, Vighter, Ievlev, Anton V., Vlassiouk, Ivan, Jesse, Stephen, Kalinin, Sergei V., Joy, David C., Rondinone, Adam J., Belianinov, Alex, and Ovchinnikova, Olga S. Thu . "Graphene engineering by neon ion beams". United States. https://doi.org/10.1088/0957-4484/27/12/125302. https://www.osti.gov/servlets/purl/1247936.
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@article{osti_1247936,
title = {Graphene engineering by neon ion beams},
author = {Iberi, Vighter and Ievlev, Anton V. and Vlassiouk, Ivan and Jesse, Stephen and Kalinin, Sergei V. and Joy, David C. and Rondinone, Adam J. and Belianinov, Alex and Ovchinnikova, Olga S.},
abstractNote = {Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He+ and Ne+ beam lithography of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.},
doi = {10.1088/0957-4484/27/12/125302},
journal = {Nanotechnology},
number = 12,
volume = 27,
place = {United States},
year = {Thu Feb 18 00:00:00 EST 2016},
month = {Thu Feb 18 00:00:00 EST 2016}
}
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Publisher's Version of Record
https://doi.org/10.1088/0957-4484/27/12/125302
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