Continuously controlled optical band gap in oxide semiconductor thin films

Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

doi:10.1021/acs.nanolett.5b04815

Title: Continuously controlled optical band gap in oxide semiconductor thin films

Abstract

The optical band gap of the prototypical semiconducting oxide SnO₂is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.

Authors:

Herklotz, Andreas ^[1]; Rus, Stefania Florina ^[2]; Ward, Thomas Zac ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Photovoltaics, National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara (Romania)

Publication Date:: Tue Feb 02 00:00:00 EST 2016

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1245355

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 16; Journal Issue: 3; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; strain doping; tin oxide; helium ion implantation; ellipsometry; uniaxial strain

Citation Formats


                    Herklotz, Andreas, Rus, Stefania Florina, and Ward, Thomas Zac. Continuously controlled optical band gap in oxide semiconductor thin films.  United States: N. p., 2016. 
Web.  doi:10.1021/acs.nanolett.5b04815.

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                    Herklotz, Andreas, Rus, Stefania Florina, & Ward, Thomas Zac. Continuously controlled optical band gap in oxide semiconductor thin films.  United States.  https://doi.org/10.1021/acs.nanolett.5b04815

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                    Herklotz, Andreas, Rus, Stefania Florina, and Ward, Thomas Zac. Tue .  
"Continuously controlled optical band gap in oxide semiconductor thin films".  United States.  https://doi.org/10.1021/acs.nanolett.5b04815.  https://www.osti.gov/servlets/purl/1245355.

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@article{osti_1245355,

  title        = {Continuously controlled optical band gap in oxide semiconductor thin films},

  author       = {Herklotz, Andreas and Rus, Stefania Florina and Ward, Thomas Zac},

  abstractNote = {The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.},

  doi          = {10.1021/acs.nanolett.5b04815},

  journal      = {Nano Letters},

  number       = 3,

  volume       = 16,

  place        = {United States},

  year         = {Tue Feb 02 00:00:00 EST 2016},

  month        = {Tue Feb 02 00:00:00 EST 2016}

}

Copy to clipboard

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Works referencing / citing this record:

Designing Magnetic Anisotropy through Strain Doping
journal, October 2018

Herklotz, Andreas; Gai, Zheng; Sharma, Yogesh
Advanced Science, Vol. 5, Issue 11
DOI: 10.1002/advs.201800356

Controllable defect driven symmetry change and domain structure evolution in BiFeO ₃ with enhanced tetragonality
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Chen, Chao; Wang, Changan; Cai, Xiangbin
Nanoscale, Vol. 11, Issue 17
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Orbital controlled band gap engineering of tetragonal BiFeO ₃ for optoelectronic applications
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Qiao, L.; Zhang, S.; Xiao, H. Y.
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Optical response of $BiFe O_{3}$ films subjected to uniaxial strain
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Herklotz, Andreas; Rus, Stefania F.; Sohn, Changhee
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Controlling Octahedral Rotations in a Perovskite via Strain Doping
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Herklotz, A.; Wong, A. T.; Meyer, T.
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3D Local Manipulation of the Metal-Insulator Transition Behavior in VO ₂ Thin Film by Defect-Induced Lattice Engineering
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Jia, Qi; Grenzer, Jörg; He, Huabing
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Designing Magnetic Anisotropy through Strain Doping
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Herklotz, Andreas; Gai, Zheng; Sharma, Yogesh
Advanced Science, Vol. 5, Issue 11
DOI: 10.1002/advs.201800356

Band Gap Tuning of Solution-Processed Ferroelectric Perovskite BiFe_1–xCo_xO₃ Thin Films
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Machado, Pamela; Scigaj, Mateusz; Gazquez, Jaume
Chemistry of Materials, Vol. 31, Issue 3
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Tao, Junguang; Guan, Lixiu
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Similar Records

Title: Continuously controlled optical band gap in oxide semiconductor thin films

Abstract

Citation Formats

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices journal, January 1987

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain journal, February 2012

Strain-Driven Electronic Band Structure Modulation of Si Nanowires journal, May 2008

Tailoring the Optical Properties of Silicon Nanowire Arrays through Strain journal, August 2002

Massive band gap variation in layered oxides through cation ordering journal, January 2015

Band gap engineering strategy via polarization rotation in perovskite ferroelectrics journal, April 2014

Efficient solar water-splitting using a nanocrystalline CoO photocatalyst journal, December 2013

Visible-Light Photocatalysis in Nitrogen-Doped Titanium Oxides journal, July 2001

Enhancement of Visible Light Photocatalytic Activity of SrTiO 3 : A Hybrid Density Functional Study journal, September 2015

Nature of the band gap and origin of the electro-/photo-activity of Co3O4 journal, January 2013

Electronic structures and excitonic transitions in nanocrystalline iron-doped tin dioxide diluted magnetic semiconductor films: an optical spectroscopic study journal, January 2011

Wide bandgap tunability in complex transition metal oxides by site-specific substitution journal, January 2012

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials journal, November 2013

Band gap engineering of In 2 O 3 by alloying with Tl 2 O 3 journal, December 2013

Band-Gap Engineering: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015) journal, March 2015

Single-Crystalline Thin Films for Studying Intrinsic Properties of BiFeO 3 –SrTiO 3 Solid Solution Photoelectrodes in Solar Energy Conversion journal, September 2015

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Band-Gap Reduction and Dopant Interaction in Epitaxial La,Cr Co-doped SrTiO 3 Thin Films journal, December 2014

Elastic strain engineering of ferroic oxides journal, February 2014

Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction journal, May 2010

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain journal, January 2014

Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide journal, April 2011

Multiband Optical Absorption Controlled by Lattice Strain in Thin-Film LaCrO 3 journal, February 2013

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation journal, June 2015

Tailoring strain in the SrTiO 3 compound by low-energy He + irradiation journal, November 2010

Band Gap Engineering of SnO 2 by Epitaxial Strain: Experimental and Theoretical Investigations journal, March 2014

Epitaxial growth of transparent tin oxide films on (0001) sapphire by pulsed laser deposition journal, January 2009

Heteroepitaxial growth of SnO2 thin films on SrTiO3 (111) single crystal substrate by laser molecular beam epitaxy journal, January 2010

Pressure and Temperature Dependences of the Raman-Active Phonons in Sn O 2 journal, March 1973

Subsurface damage from helium ions as a function of dose, beam energy, and dose rate journal, January 2009

Microstructure characterization and optical properties of sapphire after helium ion implantation journal, June 2015

Quantum Confinement Effects and Electronic Properties of SnO 2 Quantum Wires and Dots journal, March 2010

Band gap engineering of bulk and nanosheet SnO: an insight into the interlayer Sn–Sn lone pair interactions journal, January 2015

Ambipolar doping in SnO journal, August 2013

Designing Magnetic Anisotropy through Strain Doping journal, October 2018

Controllable defect driven symmetry change and domain structure evolution in BiFeO 3 with enhanced tetragonality journal, January 2019

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications journal, January 2018

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3D Local Manipulation of the Metal-Insulator Transition Behavior in VO 2 Thin Film by Defect-Induced Lattice Engineering journal, February 2018

Designing Magnetic Anisotropy through Strain Doping journal, October 2018

Band Gap Tuning of Solution-Processed Ferroelectric Perovskite BiFe1–xCoxO3 Thin Films journal, January 2019

Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms journal, March 2017

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
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Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain
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Strain-Driven Electronic Band Structure Modulation of Si Nanowires
journal, May 2008

Tailoring the Optical Properties of Silicon Nanowire Arrays through Strain
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Massive band gap variation in layered oxides through cation ordering
journal, January 2015

Band gap engineering strategy via polarization rotation in perovskite ferroelectrics
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Efficient solar water-splitting using a nanocrystalline CoO photocatalyst
journal, December 2013

Visible-Light Photocatalysis in Nitrogen-Doped Titanium Oxides
journal, July 2001

Enhancement of Visible Light Photocatalytic Activity of SrTiO ₃ : A Hybrid Density Functional Study
journal, September 2015

Nature of the band gap and origin of the electro-/photo-activity of Co3O4
journal, January 2013

Electronic structures and excitonic transitions in nanocrystalline iron-doped tin dioxide diluted magnetic semiconductor films: an optical spectroscopic study
journal, January 2011

Wide bandgap tunability in complex transition metal oxides by site-specific substitution
journal, January 2012

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials
journal, November 2013

Band gap engineering of In ₂ O ₃ by alloying with Tl ₂ O ₃
journal, December 2013

Band-Gap Engineering: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015)
journal, March 2015

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Electronic and Structural Properties of Sn _x Ti _{1− x} O ₂ (0.0 ≤ x ≤ 0.1) Solid Solutions
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Elastic strain engineering of ferroic oxides
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Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction
journal, May 2010

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain
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Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide
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Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation
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journal, November 2010

Band Gap Engineering of SnO ₂ by Epitaxial Strain: Experimental and Theoretical Investigations
journal, March 2014

Epitaxial growth of transparent tin oxide films on (0001) sapphire by pulsed laser deposition
journal, January 2009

Heteroepitaxial growth of SnO2 thin films on SrTiO3 (111) single crystal substrate by laser molecular beam epitaxy
journal, January 2010

Pressure and Temperature Dependences of the Raman-Active Phonons in Sn $O_{2}$
journal, March 1973

Subsurface damage from helium ions as a function of dose, beam energy, and dose rate
journal, January 2009

Microstructure characterization and optical properties of sapphire after helium ion implantation
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Quantum Confinement Effects and Electronic Properties of SnO ₂ Quantum Wires and Dots
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Band gap engineering of bulk and nanosheet SnO: an insight into the interlayer Sn–Sn lone pair interactions
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Designing Magnetic Anisotropy through Strain Doping
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Controllable defect driven symmetry change and domain structure evolution in BiFeO ₃ with enhanced tetragonality
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