Electronic transport through Al/InN nanowire/Al junctions
Abstract
We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible at fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- McGill Univ., Montreal, QC (Canada)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1239365
- Alternate Identifier(s):
- OSTI ID: 1420576
- Report Number(s):
- SAND2016-0883J
Journal ID: ISSN 0003-6951; APPLAB; 619001
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 6; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Lu, Tzu -Ming, Wang, George T., Pan, Wei, Zhao, S., and Mi, Z. Electronic transport through Al/InN nanowire/Al junctions. United States: N. p., 2016.
Web. doi:10.1063/1.4941733.
Lu, Tzu -Ming, Wang, George T., Pan, Wei, Zhao, S., & Mi, Z. Electronic transport through Al/InN nanowire/Al junctions. United States. https://doi.org/10.1063/1.4941733
Lu, Tzu -Ming, Wang, George T., Pan, Wei, Zhao, S., and Mi, Z. Wed .
"Electronic transport through Al/InN nanowire/Al junctions". United States. https://doi.org/10.1063/1.4941733. https://www.osti.gov/servlets/purl/1239365.
@article{osti_1239365,
title = {Electronic transport through Al/InN nanowire/Al junctions},
author = {Lu, Tzu -Ming and Wang, George T. and Pan, Wei and Zhao, S. and Mi, Z.},
abstractNote = {We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible at fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.},
doi = {10.1063/1.4941733},
journal = {Applied Physics Letters},
number = 6,
volume = 108,
place = {United States},
year = {Wed Feb 10 00:00:00 EST 2016},
month = {Wed Feb 10 00:00:00 EST 2016}
}
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