Simultaneous thermoelectric and optoelectronic characterization of individual nanowires
Abstract
Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials tomore »
- Authors:
-
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- New Mexico State Univ., Las Cruces, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1237702
- Report Number(s):
- SAND-2015-7507J
Journal ID: ISSN 1530-6984; 603460
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; nanowires; GaN; GaN/AlGaN; photocurrent; thermoelectric; photogating
Citation Formats
Leonard, Francois, Wang, George T., Swartzentruber, Brian S., Martinez, Julio A., Song, Erdong, and Li, Qiming. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires. United States: N. p., 2015.
Web. doi:10.1021/acs.nanolett.5b03572.
Leonard, Francois, Wang, George T., Swartzentruber, Brian S., Martinez, Julio A., Song, Erdong, & Li, Qiming. Simultaneous thermoelectric and optoelectronic characterization of individual nanowires. United States. https://doi.org/10.1021/acs.nanolett.5b03572
Leonard, Francois, Wang, George T., Swartzentruber, Brian S., Martinez, Julio A., Song, Erdong, and Li, Qiming. Tue .
"Simultaneous thermoelectric and optoelectronic characterization of individual nanowires". United States. https://doi.org/10.1021/acs.nanolett.5b03572. https://www.osti.gov/servlets/purl/1237702.
@article{osti_1237702,
title = {Simultaneous thermoelectric and optoelectronic characterization of individual nanowires},
author = {Leonard, Francois and Wang, George T. and Swartzentruber, Brian S. and Martinez, Julio A. and Song, Erdong and Li, Qiming},
abstractNote = {Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.},
doi = {10.1021/acs.nanolett.5b03572},
journal = {Nano Letters},
number = 12,
volume = 15,
place = {United States},
year = {Tue Nov 03 00:00:00 EST 2015},
month = {Tue Nov 03 00:00:00 EST 2015}
}
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