Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai; Snead, Lance Lewis

doi:10.1016/j.nimb.2016.01.005

Title: Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Abstract

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

Authors:

Campbell, Anne A. ^[1]; Porter, Wallace D. ^[1]; Katoh, Yutai ^[1]; Snead, Lance Lewis ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Publication Date:: Thu Jan 14 00:00:00 EST 2016

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Fusion Energy Sciences (FES)

OSTI Identifier:: 1236583

Alternate Identifier(s):: OSTI ID: 1359672

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Additional Journal Information:: Journal Volume: 370; Journal Issue: C; Journal ID: ISSN 0168-583X

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; silicon carbide; passive irradiation temperature monitor; dilatometry; annealing

Citation Formats


                    Campbell, Anne A., Porter, Wallace D., Katoh, Yutai, and Snead, Lance Lewis. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature.  United States: N. p., 2016. 
Web.  doi:10.1016/j.nimb.2016.01.005.

Copy to clipboard


                    Campbell, Anne A., Porter, Wallace D., Katoh, Yutai, & Snead, Lance Lewis. Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature.  United States.  https://doi.org/10.1016/j.nimb.2016.01.005

Copy to clipboard


                    Campbell, Anne A., Porter, Wallace D., Katoh, Yutai, and Snead, Lance Lewis. Thu .  
"Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature".  United States.  https://doi.org/10.1016/j.nimb.2016.01.005.  https://www.osti.gov/servlets/purl/1236583.

Copy to clipboard


                    
@article{osti_1236583,

  title        = {Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature},

  author       = {Campbell, Anne A. and Porter, Wallace D. and Katoh, Yutai and Snead, Lance Lewis},

  abstractNote = {Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.},

  doi          = {10.1016/j.nimb.2016.01.005},

  journal      = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},

  number       = C,

  volume       = 370,

  place        = {United States},

  year         = {Thu Jan 14 00:00:00 EST 2016},

  month        = {Thu Jan 14 00:00:00 EST 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1016/j.nimb.2016.01.005

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 61 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Determination of dose and temperature in graphite irradiation experiments in the dounreay fast reactor
journal, April 1967

Martin, W. H.; Price, A. M.
Journal of Nuclear Energy, Vol. 21, Issue 4
DOI: 10.1016/0022-3107(67)90116-5

Temperature monitors for uninstrumented irradiation experiments
journal, June 1971

Bramman, J. I.; Fraser, A. S.; Martin, W. H.
Journal of Nuclear Energy, Vol. 25, Issue 6
DOI: 10.1016/0022-3107(71)90024-4

Effects of sintering aids on the length change of neutron irradiated SiC ceramics during annealing at high temperature
journal, June 1989

Suzuki, T.; Yano, T.; Maruyama, T.
Journal of Nuclear Materials, Vol. 165, Issue 3
DOI: 10.1016/0022-3115(89)90202-X

The development of silicon carbide as a routine irradiation temperature monitor, and its calibration in a thermal reactor
journal, September 1976

Palentine, J. E.
Journal of Nuclear Materials, Vol. 61, Issue 3
DOI: 10.1016/0022-3115(76)90263-4

Works referencing / citing this record:

Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature
journal, July 2018

Koyanagi, Takaaki; Katoh, Yutai; Lance, Michael J.
Journal of Raman Spectroscopy, Vol. 49, Issue 10
DOI: 10.1002/jrs.5425

Response of isotopically tailored titanium diboride to neutron irradiation
journal, September 2018

Koyanagi, Takaaki; Katoh, Yutai; Ang, Caen
Journal of the American Ceramic Society, Vol. 102, Issue 1
DOI: 10.1111/jace.16036

Similar Records in DOE PAGES and OSTI.GOV collections:

Evaluation of the continuous dilatometer method of silicon carbide thermometry for passive irradiation temperature determination

Journal Article Field, Kevin G. ; McDuffee, Joel Lee ; Geringer, Josina Wilna ; ... - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Silicon carbide (SiC) is a primary candidate for passive irradiation temperature monitoring, and continuous dilatometry (CD) has been proposed as the key method for extracting irradiation temperatures from SiC thermometry samples. The CD method was evaluated to determine the sensitivity of the technique to the analysis procedure, as well as its accuracy and precision. Analysis found that the CD method had a ±20 °C sensitivity to the algorithm used to determine the irradiation temperatures. Comparison of the CD method with the continuous length change method for SiC thermometry showed CD is a more viable method of extracting irradiation temperatures. Inmore »« less
Cited by 14
https://doi.org/10.1016/j.nimb.2019.02.022

Full Text Available
Evaluations of Silicon Carbide Temperature Monitors

Program Document Wilding, Malwina A

The effect of irradiation on materials properties is an important field of study for materials usage in both fission and fusion systems for energy production. Neutron flux and energy spectrums are well understood; however, the irradiation temperature can be more difficult to determine. Since the early 1960s, Silicon Carbide (SiC) has been used as a passive post-irradiation temperature monitor because the irradiation defects anneal out above the irradiation temperature. Irradiation temperature is determined by measuring a property change after isochronal annealing or during a continuously monitored annealing process. There are many properties that may be measured including electrical resistivity, bulkmore »« less
Full Text Available
Qualification of Commercially Available Silicon Carbide for Passive Thermometry in Reactor Experiments – FY23 Status Report

Technical Report Mulligan, Padhraic L. ; Campbell, Anne A. ; Parish, Chad M. ; ...

Silicon carbide (SiC) is often used as a passive temperature indicator for uninstrumented in-core nuclear experiments. For the past several decades, Oak Ridge National Laboratory has relied primarily on SiC thermometry manufactured by Dow Chemical Company, formerly Rohm and Haas because of the material’s high density and reduced grain boundary elements. Although Dow SiC has performed well in this application, this material is no longer commercially available, and a new supplier is needed for future experiments. To determine a suitable replacement, a study was initiated on five types of SiC from four commercial vendors. Several critical properties, including density, electricalmore »« less
https://doi.org/10.2172/2001384

Full Text Available
Evaluations of University of Wisconsin Silicon Carbide Temperature Monitors 300 LO and 400 LO B

Technical Report Davis, K L ; Rempe, J L ; Knudson, D L ; ...

Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part ofmore »« less
https://doi.org/10.2172/1033907

Full Text Available
Benchmark Analysis for the Optical Dilatometry Method Using Silicon Carbide Temperature Monitors

Technical Report Wilding, Malwina A ; Davis, Kurt L

The main objective of this project was to conduct a benchmark analysis for the optical dilatometry method by using NSUF’s SiC temperature monitors: two (2) SiC temperature monitors provided by NSUF’s BSU 8242 experiment and two (2) SiC temperature monitors provided by NSUF’s GE Hitachi experiment. Per the BSU 8242 experiment, KGT 3597 and KGT 3591 had a design temperature of 400?C and an exposure of 3 dpa. Per the GE Hitachi experiment, KGT 3341 and KGT 3336 had a design temperature of 290?C +/ 50?C and an exposure of 0.5–1 dpa. The KGT 3336 SiC monitor was split intomore »« less
https://doi.org/10.2172/2336759

Full Text Available

Similar Records

Title: Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Abstract

Citation Formats

Determination of dose and temperature in graphite irradiation experiments in the dounreay fast reactor journal, April 1967

Temperature monitors for uninstrumented irradiation experiments journal, June 1971

Effects of sintering aids on the length change of neutron irradiated SiC ceramics during annealing at high temperature journal, June 1989

The development of silicon carbide as a routine irradiation temperature monitor, and its calibration in a thermal reactor journal, September 1976

Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature journal, July 2018

Response of isotopically tailored titanium diboride to neutron irradiation journal, September 2018

Determination of dose and temperature in graphite irradiation experiments in the dounreay fast reactor
journal, April 1967

Temperature monitors for uninstrumented irradiation experiments
journal, June 1971

Effects of sintering aids on the length change of neutron irradiated SiC ceramics during annealing at high temperature
journal, June 1989

The development of silicon carbide as a routine irradiation temperature monitor, and its calibration in a thermal reactor
journal, September 1976

Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature
journal, July 2018

Response of isotopically tailored titanium diboride to neutron irradiation
journal, September 2018