Epsilon-near-zero modes for tailored light-matter interaction
Abstract
Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximize the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. As a result, this design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1236227
- Alternate Identifier(s):
- OSTI ID: 1224121
- Report Number(s):
- SAND-2015-0187J
Journal ID: ISSN 2331-7019; PRAHB2; 562116
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 4; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Campione, Salvatore, Liu, Sheng, Benz, Alexander, Klem, John F., Sinclair, Michael B., and Brener, Igal. Epsilon-near-zero modes for tailored light-matter interaction. United States: N. p., 2015.
Web. doi:10.1103/PhysRevApplied.4.044011.
Campione, Salvatore, Liu, Sheng, Benz, Alexander, Klem, John F., Sinclair, Michael B., & Brener, Igal. Epsilon-near-zero modes for tailored light-matter interaction. United States. https://doi.org/10.1103/PhysRevApplied.4.044011
Campione, Salvatore, Liu, Sheng, Benz, Alexander, Klem, John F., Sinclair, Michael B., and Brener, Igal. Tue .
"Epsilon-near-zero modes for tailored light-matter interaction". United States. https://doi.org/10.1103/PhysRevApplied.4.044011. https://www.osti.gov/servlets/purl/1236227.
@article{osti_1236227,
title = {Epsilon-near-zero modes for tailored light-matter interaction},
author = {Campione, Salvatore and Liu, Sheng and Benz, Alexander and Klem, John F. and Sinclair, Michael B. and Brener, Igal},
abstractNote = {Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximize the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. As a result, this design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.},
doi = {10.1103/PhysRevApplied.4.044011},
journal = {Physical Review Applied},
number = 4,
volume = 4,
place = {United States},
year = {Tue Oct 20 00:00:00 EDT 2015},
month = {Tue Oct 20 00:00:00 EDT 2015}
}
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Works referencing / citing this record:
Epsilon-Near-Zero Photonics: A New Platform for Integrated Devices
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