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Title: Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si

Abstract

A recent study has shown the thermoelectric performance of Al-doped Mg2Si materials can be significantly enhanced at moderate pressure. To understand the cause of this phenomenon, we have performed in situ angle dispersive X-ray diffraction and infrared reflectivity measurements up to 17 GPa at room temperature. Contrary to previous experiment, using helium as a pressure transmission medium, no structural transformation was observed in pure Mg2Si. In contrast, a phase transition from cubic anti-fluorite (Fm-3m) to orthorhombic anti-cotunnite (Pnma) was observed in the Al-doped sample at 10 GPa. Infrared reflectivity measurements show the electrical conductivity increases with pressure and is further enhanced after the phase transition. The electron density of states at the Fermi level computed form density functional calculations predict a maximum thermoelectric power factor at 1.9 GPa, which is in good agreement with the experimental observation.

Authors:
 [1];  [2];  [3];  [4]; ORCiD logo [5];  [1]
  1. Univ. of Saskatchewan, Saskatoon, SK (Canada)
  2. Carnegie Inst. of Washington, Washington, DC (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Okayama Univ. of Science, Okayama (Japan)
  5. Canadian Light Source, Inc., Saskatoon, SK (Canada)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1224008
Alternate Identifier(s):
OSTI ID: 1420463
Grant/Contract Number:  
AC02-06CH11357; FC03 03N00144; AC02-98CH10886
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; Thermoelectric effects; Gemstones; Crystal lattices; X-ray diffraction; Doping; Electrical conductivity; Density of states; Density functional theory; Electrical properties and parameters; Phase transitions

Citation Formats

Zhao, Jianbao, Liu, Zhenxian, Gordon, Robert A., Takarabe, Kenichi, Reid, Joel, and Tse, John S. Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si. United States: N. p., 2015. Web. doi:10.1063/1.4933069.
Zhao, Jianbao, Liu, Zhenxian, Gordon, Robert A., Takarabe, Kenichi, Reid, Joel, & Tse, John S. Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si. United States. https://doi.org/10.1063/1.4933069
Zhao, Jianbao, Liu, Zhenxian, Gordon, Robert A., Takarabe, Kenichi, Reid, Joel, and Tse, John S. Wed . "Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si". United States. https://doi.org/10.1063/1.4933069. https://www.osti.gov/servlets/purl/1224008.
@article{osti_1224008,
title = {Pressure-induced phase transition and electrical properties of thermoelectric Al-doped Mg2Si},
author = {Zhao, Jianbao and Liu, Zhenxian and Gordon, Robert A. and Takarabe, Kenichi and Reid, Joel and Tse, John S.},
abstractNote = {A recent study has shown the thermoelectric performance of Al-doped Mg2Si materials can be significantly enhanced at moderate pressure. To understand the cause of this phenomenon, we have performed in situ angle dispersive X-ray diffraction and infrared reflectivity measurements up to 17 GPa at room temperature. Contrary to previous experiment, using helium as a pressure transmission medium, no structural transformation was observed in pure Mg2Si. In contrast, a phase transition from cubic anti-fluorite (Fm-3m) to orthorhombic anti-cotunnite (Pnma) was observed in the Al-doped sample at 10 GPa. Infrared reflectivity measurements show the electrical conductivity increases with pressure and is further enhanced after the phase transition. The electron density of states at the Fermi level computed form density functional calculations predict a maximum thermoelectric power factor at 1.9 GPa, which is in good agreement with the experimental observation.},
doi = {10.1063/1.4933069},
journal = {Journal of Applied Physics},
number = 14,
volume = 118,
place = {United States},
year = {Wed Oct 14 00:00:00 EDT 2015},
month = {Wed Oct 14 00:00:00 EDT 2015}
}

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Works referenced in this record:

First-Principles Calculation of Electronic Structure of Mg2Si with Doping
conference, May 2009

  • Qian, Chen; Quan, Xie; Feng-Juan, Zhao
  • 2009 International Forum on Information Technology and Applications (IFITA)
  • DOI: 10.1109/IFITA.2009.22

Engineered doping of organic semiconductors for enhanced thermoelectric efficiency
journal, May 2013

  • Kim, G-H.; Shao, L.; Zhang, K.
  • Nature Materials, Vol. 12, Issue 8
  • DOI: 10.1038/nmat3635

A re-investigation on pressure-induced phase transition of Mg2Si
journal, December 2012


Enhanced thermoelectric performance of Nb-doped SrTiO3 by nano-inclusion with low thermal conductivity
journal, December 2013

  • Wang, Ning; Chen, Haijun; He, Hongcai
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03449

Self-consistent calculation of total energies of the electron gas using many-body perturbation theory
journal, January 2001


Sb- and Bi-doped Mg 2 Si: location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties
journal, January 2014

  • Farahi, Nader; VanZant, Mathew; Zhao, Jianbao
  • Dalton Trans., Vol. 43, Issue 40
  • DOI: 10.1039/C4DT01177E

Pressure Induced Phase Transitions and Metallization of a Neutral Radical Conductor
journal, January 2014

  • Wong, Joanne W. L.; Mailman, Aaron; Lekin, Kristina
  • Journal of the American Chemical Society, Vol. 136, Issue 3
  • DOI: 10.1021/ja411057x

Projector augmented-wave method
journal, December 1994


Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences
journal, January 2011

  • Sakamoto, Tatsuya; Iida, Tsutomu; Kurosaki, Shota
  • Journal of Electronic Materials, Vol. 40, Issue 5
  • DOI: 10.1007/s11664-010-1489-5

A study of the phase transitions, electronic structures and optical properties of under high pressure
journal, April 2010


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


On the Theory of Dispersion of X-Rays
journal, January 1926


Complex thermoelectric materials
journal, February 2008

  • Snyder, G. Jeffrey; Toberer, Eric S.
  • Nature Materials, Vol. 7, Issue 2, p. 105-114
  • DOI: 10.1038/nmat2090

First principles calculation of structural phase transformation in Mg2Si at high pressure
journal, December 2010

  • Hao, Jun-Hua; Guo, Zhi-Guang; Jin, Qing-Hua
  • Solid State Communications, Vol. 150, Issue 47-48
  • DOI: 10.1016/j.ssc.2010.10.017

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials
journal, February 2013


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


The best thermoelectric.
journal, July 1996

  • Mahan, G. D.; Sofo, J. O.
  • Proceedings of the National Academy of Sciences, Vol. 93, Issue 15
  • DOI: 10.1073/pnas.93.15.7436

Hydrostaticity of Pressure Media in Diamond Anvil Cells
journal, September 2009


Enhancing the Thermoelectric Power Factor with Highly Mismatched Isoelectronic Doping
journal, January 2010


Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994


In situ X-ray observation of phase transitions in under high pressure
journal, May 2009


Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States
journal, July 2008

  • Heremans, J. P.; Jovovic, V.; Toberer, E. S.
  • Science, Vol. 321, Issue 5888, p. 554-557
  • DOI: 10.1126/science.1159725

Solid-State Synthesis and Thermoelectric Properties of Al-Doped Mg2Si
journal, October 2011


Kramers–Kronig constrained variational analysis of optical spectra
journal, August 2005

  • Kuzmenko, A. B.
  • Review of Scientific Instruments, Vol. 76, Issue 8
  • DOI: 10.1063/1.1979470

Influence of dimensionality on thermoelectric device performance
journal, February 2009

  • Kim, Raseong; Datta, Supriyo; Lundstrom, Mark S.
  • Journal of Applied Physics, Vol. 105, Issue 3
  • DOI: 10.1063/1.3074347

Modeling of surface vs. bulk ionic conductivity in fixed charge membranes
journal, January 2003

  • Mafé, Salvador; Manzanares, José A.; Ramirez, Patricio
  • Phys. Chem. Chem. Phys., Vol. 5, Issue 2
  • DOI: 10.1039/b209438j

Ab-initio structure determination of LiSbWO6 by X-ray powder diffraction
journal, March 1988


Ab initiomolecular dynamics for liquid metals
journal, January 1993


First-principles and experimental studies of impurity doping into Mg2Si
journal, March 2008


Electronic Structure and Optical Properties of Mg 2 Si, Mg 2 Ge, and Mg 2 Sn
journal, February 1969


The surface of evaporated carbon films is an insulating, high-bandgap material
journal, May 2011

  • Larson, David M.; Downing, Kenneth H.; Glaeser, Robert M.
  • Journal of Structural Biology, Vol. 174, Issue 2
  • DOI: 10.1016/j.jsb.2011.02.005

Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu
journal, April 2010

  • Sakamoto, Tatsuya; Iida, Tsutomu; Matsumoto, Atsunobu
  • Journal of Electronic Materials, Vol. 39, Issue 9
  • DOI: 10.1007/s11664-010-1155-y

Significant enhancement of thermoelectric properties and metallization of Al-doped Mg 2 Si under pressure
journal, June 2014

  • Morozova, Natalia V.; Ovsyannikov, Sergey V.; Korobeinikov, Igor V.
  • Journal of Applied Physics, Vol. 115, Issue 21
  • DOI: 10.1063/1.4881015

Phase transition, structural and thermodynamic properties of Mg 2 Si polymorphs
journal, March 2011


Calibration of the ruby pressure gauge to 800 kbar under quasi-hydrostatic conditions
journal, January 1986

  • Mao, H. K.; Xu, J.; Bell, P. M.
  • Journal of Geophysical Research, Vol. 91, Issue B5, p. 4673-4676
  • DOI: 10.1029/JB091iB05p04673

Crystallographic Computing System JANA2006: General features
journal, January 2014

  • Petříček, Václav; Dušek, Michal; Palatinus, Lukáš
  • Zeitschrift für Kristallographie - Crystalline Materials, Vol. 229, Issue 5
  • DOI: 10.1515/zkri-2014-1737

Pressure-induced semiconductor–metal phase transition in Mg2Si
journal, March 2012


Works referencing / citing this record:

High pressure synthesis of multiple doped Mg2Si-based thermoelectric materials
journal, April 2018

  • Wei, Jiaming; Duan, Bo; Li, Jialiang
  • Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 13
  • DOI: 10.1007/s10854-018-9168-z

Strategies and challenges of high-pressure methods applied to thermoelectric materials
journal, June 2019

  • Morozova, Natalia V.; Korobeinikov, Igor V.; Ovsyannikov, Sergey V.
  • Journal of Applied Physics, Vol. 125, Issue 22
  • DOI: 10.1063/1.5094166

High-pressure phases of Mg 2 Si from first principles
journal, March 2016