Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures
Abstract
Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. In this study, we will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.
- Authors:
-
- Univ. College London, London (United Kingdom)
- Ecole Polytechnique de Montreal, Montreal Quebec(Canada)
- Max Planck Institute of Microstructure Physics, Halle (Germany)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source.; Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1212765
- Alternate Identifier(s):
- OSTI ID: 1242406
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 26; Journal Issue: 46; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Xiong, Gang, Moutanabbir, Oussama, Reiche, Manfred, Harder, Ross, and Robinson, Ian. Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. United States: N. p., 2014.
Web. doi:10.1002/adma.201304511.
Xiong, Gang, Moutanabbir, Oussama, Reiche, Manfred, Harder, Ross, & Robinson, Ian. Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. United States. https://doi.org/10.1002/adma.201304511
Xiong, Gang, Moutanabbir, Oussama, Reiche, Manfred, Harder, Ross, and Robinson, Ian. Sat .
"Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures". United States. https://doi.org/10.1002/adma.201304511. https://www.osti.gov/servlets/purl/1212765.
@article{osti_1212765,
title = {Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures},
author = {Xiong, Gang and Moutanabbir, Oussama and Reiche, Manfred and Harder, Ross and Robinson, Ian},
abstractNote = {Coherent X-ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens-less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra-high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. In this study, we will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon-on-insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.},
doi = {10.1002/adma.201304511},
journal = {Advanced Materials},
number = 46,
volume = 26,
place = {United States},
year = {Sat Dec 06 00:00:00 EST 2014},
month = {Sat Dec 06 00:00:00 EST 2014}
}
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Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping
text, January 2019
- Guzzinati, Giulio; Ghielens, Wannes; Mahr, Christoph
- arXiv