Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field
Abstract
Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. Lastly, we further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sejong Univ., Seoul (Korea)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1201284
- Alternate Identifier(s):
- OSTI ID: 1198565
- Grant/Contract Number:
- AC05-00OR22725; 2012M3A7B4049888; 2010-0020207; 2013R1A2009131
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 1; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Park, Changwon, Ryou, Junga, Hong, Suklyun, Sumpter, Bobby G., Kim, Gunn, and Yoon, Mina. Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field. United States: N. p., 2015.
Web. doi:10.1103/PhysRevLett.115.015502.
Park, Changwon, Ryou, Junga, Hong, Suklyun, Sumpter, Bobby G., Kim, Gunn, & Yoon, Mina. Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field. United States. https://doi.org/10.1103/PhysRevLett.115.015502
Park, Changwon, Ryou, Junga, Hong, Suklyun, Sumpter, Bobby G., Kim, Gunn, and Yoon, Mina. Thu .
"Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field". United States. https://doi.org/10.1103/PhysRevLett.115.015502. https://www.osti.gov/servlets/purl/1201284.
@article{osti_1201284,
title = {Electronic properties of bilayer graphenes strongly coupled to interlayer stacking and an external field},
author = {Park, Changwon and Ryou, Junga and Hong, Suklyun and Sumpter, Bobby G. and Kim, Gunn and Yoon, Mina},
abstractNote = {Bilayer graphene (BLG) with a tunable band gap appears interesting as an alternative to graphene for practical applications; thus, its transport properties are being actively pursued. Using density functional theory and perturbation analysis, we investigated, under an external electric field, the electronic properties of BLG in various stackings relevant to recently observed complex structures. We established the first phase diagram summarizing the stacking-dependent gap openings of BLG for a given field. Lastly, we further identified high-density midgap states, localized on grain boundaries, even under a strong field, which can considerably reduce the overall transport gap.},
doi = {10.1103/PhysRevLett.115.015502},
journal = {Physical Review Letters},
number = 1,
volume = 115,
place = {United States},
year = {Thu Jul 02 00:00:00 EDT 2015},
month = {Thu Jul 02 00:00:00 EDT 2015}
}
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