Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale
Abstract
This study uses the in-situ high-temperature nanoindentation coupled with electrical measurements to investigate the temperature dependence (25 to 200 C) of the phase transformation behavior of crystalline silicon (dc-Si) at the nanoscale. Along with in-situ indentation and electrical data, ex-situ characterizations such as Raman and cross-sectional transmission electron microscopy (XTEM) have been used to reveal the dominant mode of deformation under the indenter. In contrast to the previous studies, the dominant mode of deformation under the nanoindenter at elevated temperatures is not the dc-Si to metallic phase ( -Sn) transformation. Instead, XTEM images from 150 C indents reveal that the dominant mode of deformation is twinning along {111} planes. While the in-situ high-temperature electrical measurements show an increase in the current due to metallic phase formation up to 125 C, it is absent 150 C, revealing that the formation of the metallic phase is negligible in this regime. Thus, this work provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale.
- Authors:
-
- Australian National Univ., Canberra, ACT (Australia)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1185893
- Alternate Identifier(s):
- OSTI ID: 1228159
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Mangalampalli S. R. N. Kiran, Tran, Tuan, Smillie, Lachlan, Haberl, Bianca, Subianto, D., Williams, James S., and Bradby, Jodie E. Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale. United States: N. p., 2015.
Web. doi:10.1063/1.4921534.
Mangalampalli S. R. N. Kiran, Tran, Tuan, Smillie, Lachlan, Haberl, Bianca, Subianto, D., Williams, James S., & Bradby, Jodie E. Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale. United States. https://doi.org/10.1063/1.4921534
Mangalampalli S. R. N. Kiran, Tran, Tuan, Smillie, Lachlan, Haberl, Bianca, Subianto, D., Williams, James S., and Bradby, Jodie E. Wed .
"Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale". United States. https://doi.org/10.1063/1.4921534. https://www.osti.gov/servlets/purl/1185893.
@article{osti_1185893,
title = {Evidence for the temperature dependence of phase transformation behavior of silicon at nanoscale},
author = {Mangalampalli S. R. N. Kiran and Tran, Tuan and Smillie, Lachlan and Haberl, Bianca and Subianto, D. and Williams, James S. and Bradby, Jodie E.},
abstractNote = {This study uses the in-situ high-temperature nanoindentation coupled with electrical measurements to investigate the temperature dependence (25 to 200 C) of the phase transformation behavior of crystalline silicon (dc-Si) at the nanoscale. Along with in-situ indentation and electrical data, ex-situ characterizations such as Raman and cross-sectional transmission electron microscopy (XTEM) have been used to reveal the dominant mode of deformation under the indenter. In contrast to the previous studies, the dominant mode of deformation under the nanoindenter at elevated temperatures is not the dc-Si to metallic phase ( -Sn) transformation. Instead, XTEM images from 150 C indents reveal that the dominant mode of deformation is twinning along {111} planes. While the in-situ high-temperature electrical measurements show an increase in the current due to metallic phase formation up to 125 C, it is absent 150 C, revealing that the formation of the metallic phase is negligible in this regime. Thus, this work provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale.},
doi = {10.1063/1.4921534},
journal = {Journal of Applied Physics},
number = ,
volume = 117,
place = {United States},
year = {Wed May 27 00:00:00 EDT 2015},
month = {Wed May 27 00:00:00 EDT 2015}
}
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