Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly
Abstract
We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.
- Authors:
-
- Peking Univ., Beijing (China). School of Physics; China and Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics (BNLCP-CAS)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- Trinity College, Dublin (Ireland). CRANN and School of Physics
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Basic Research Program of China
- OSTI Identifier:
- 1185565
- Alternate Identifier(s):
- OSTI ID: 1180379
- Grant/Contract Number:
- AC05-00OR22725; 2011CBA00106; 2012CB927400; 2010CB934401; 2014AA032904; 11434014
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 90; Journal Issue: 19; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Liu, Liang, Niu, Jiasen, Xiang, Li, Wei, Jian, Li, D. -L., Feng, J. -F., Han, X. -F., Zhang, X. -G., and Coey, J. M. D. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly. United States: N. p., 2014.
Web. doi:10.1103/PhysRevB.90.195132.
Liu, Liang, Niu, Jiasen, Xiang, Li, Wei, Jian, Li, D. -L., Feng, J. -F., Han, X. -F., Zhang, X. -G., & Coey, J. M. D. Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly. United States. https://doi.org/10.1103/PhysRevB.90.195132
Liu, Liang, Niu, Jiasen, Xiang, Li, Wei, Jian, Li, D. -L., Feng, J. -F., Han, X. -F., Zhang, X. -G., and Coey, J. M. D. Tue .
"Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly". United States. https://doi.org/10.1103/PhysRevB.90.195132. https://www.osti.gov/servlets/purl/1185565.
@article{osti_1185565,
title = {Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly},
author = {Liu, Liang and Niu, Jiasen and Xiang, Li and Wei, Jian and Li, D. -L. and Feng, J. -F. and Han, X. -F. and Zhang, X. -G. and Coey, J. M. D.},
abstractNote = {We provide experimental evidence that zero bias anomaly in the differential resistance of magnetic tunnel junctions (MTJs) is due to electron-electron interaction (EEI). Magnon effect is excluded by measuring at low temperatures down to 0.2 K and with reduced AC measurement voltages down to 0.06 mV. The normalized change of conductance is proportional to ln (eV /kB T ), consistent with the Altshuler-Aronov theory of tunneling with EEI but inconsistent with magnetic impurity scattering. The slope of the ln (eV /kBT ) dependence is symmetry dependent, i.e., MTJs with symmetry filtering show di erent slopes for P and AP states, while those without symmetry filtering (amorphous barriers) have nearly the same slopes for P and AP.},
doi = {10.1103/PhysRevB.90.195132},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 19,
volume = 90,
place = {United States},
year = {Tue Nov 18 00:00:00 EST 2014},
month = {Tue Nov 18 00:00:00 EST 2014}
}
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Figures / Tables:
FIG. 1: (color online) First (a) and second (b) derivative at 3.6 K in the P (red line, 500 G) and AP (blue line, -300 G) states. ‘ZB’, ‘M’, and ‘Ph’ peaks in IETS are clearly visible. The maximum modulation voltage is about 4 mV.
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