Microscopic model for intersubband gain from electrically pumped quantum-dot structures

Michael, Stephan; Chow, Weng Wah; Schneider, Han Christian

doi:10.1103/PhysRevB.90.165302

Title: Microscopic model for intersubband gain from electrically pumped quantum-dot structures

Full Record
Other Related Research

Abstract

We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-infrared range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. We find, comparing different structures, that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum-dot active region too fast to sustain inversion.

Authors:

Michael, Stephan ^[1]; Chow, Weng Wah ^[2]; Schneider, Han Christian ^[1]

Univ. of Kaiserslautern, Kaiserslautern (Germany)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Fri Oct 03 00:00:00 EDT 2014

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1183097

Alternate Identifier(s):: OSTI ID: 1180598

Report Number(s):: SAND-2014-16994J
Journal ID: ISSN 1098-0121; PRBMDO; 536944

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Volume: 90; Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Michael, Stephan, Chow, Weng Wah, and Schneider, Han Christian. Microscopic model for intersubband gain from electrically pumped quantum-dot structures.  United States: N. p., 2014. 
Web.  doi:10.1103/PhysRevB.90.165302.

Copy to clipboard


                    Michael, Stephan, Chow, Weng Wah, & Schneider, Han Christian. Microscopic model for intersubband gain from electrically pumped quantum-dot structures.  United States.  https://doi.org/10.1103/PhysRevB.90.165302

Copy to clipboard


                    Michael, Stephan, Chow, Weng Wah, and Schneider, Han Christian. Fri .  
"Microscopic model for intersubband gain from electrically pumped quantum-dot structures".  United States.  https://doi.org/10.1103/PhysRevB.90.165302.  https://www.osti.gov/servlets/purl/1183097.

Copy to clipboard


                    
@article{osti_1183097,

  title        = {Microscopic model for intersubband gain from electrically pumped quantum-dot structures},

  author       = {Michael, Stephan and Chow, Weng Wah and Schneider, Han Christian},

  abstractNote = {We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-infrared range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. We find, comparing different structures, that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum-dot active region too fast to sustain inversion.},

  doi          = {10.1103/PhysRevB.90.165302},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 16,

  volume       = 90,

  place        = {United States},

  year         = {Fri Oct 03 00:00:00 EDT 2014},

  month        = {Fri Oct 03 00:00:00 EDT 2014}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevB.90.165302

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Intersubband transitions in proton irradiated InGaAs/GaAs multiple quantum dots

Journal Article Chua, Y C ; Decuir, Jr, E A ; Manasreh, M O ; ... - Applied Physics Letters

The optical absorbance spectra of the intersubband transition in 3 MeV proton irradiated In{sub 0.3}Ga{sub 0.7}As/GaAs multiple quantum dot samples, cut from the same wafer, were investigated as a function of irradiation dose. The intensity of the intersubband transition is observed to decrease as the irradiation dose is increased. The behavior of the intersubband transition in irradiated In{sub 0.3}Ga{sub 0.7}As/GaAs multiple quantum dot samples is compared to those of intersubband transitions in irradiated GaAs/AlGaAs and InGaAs/InAlAs multiple quantum well samples. The intersubband transition absorbance spectrum was completely depleted in a multiple quantum dot sample irradiated with 5x10{sup 14} cm{sup -2}.more »« less
https://doi.org/10.1063/1.2035877
Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

Journal Article Liu, X. H. ; Zhou, X. H., E-mail: xhzhou@mail.sitp.ac.cn ; Li, N. ; ... - Journal of Applied Physics

The temperature- and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to themore »« less
https://doi.org/10.1063/1.4869535
Group-III vacancy induced In{sub x}Ga{sub 1-x}As quantum dot interdiffusion

Journal Article Djie, H S ; Wang, D -N ; Ooi, B S ; ... - Physical Review. B, Condensed Matter and Materials Physics

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H{sub m} for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-wellmore »« less
https://doi.org/10.1103/PHYSREVB.73.1
Envelope function calculations of linear and nonlinear gains in a strained-layer quantum-well laser

Journal Article Ahn, Doyeol ; Yoo, Taekyung - IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

In this article, the authors study theoretically the linear and the nonlinear optical gains of strained-layer InGaAs-AlGaAs quantum well lasers with band mixing effects taken into account. Effects of the biaxial compressive strain of the InGaAs-AlGaAs quantum well on the band structure are investigated by solving for the Pikus-Bir Hamiltonian. The biaxial compressive strain separates the HH and the LH subbands by pulling down the HH subbands and pushing away the LH subbands from the valence band edge. Since the C-HH transition is dominated by the TE polarization they expect that the TE mode gain would be substantially larger thanmore »« less
https://doi.org/10.1109/3.259399
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

Journal Article Kirstaedter, N ; Schmidt, O G ; Ledentsov, N N ; ... - Applied Physics Letters

We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8({plus_minus}1){times}10{sup 4} cm{sup {minus}1} at 80 Acm{sup {minus}2}. Calculations including realistic quantum dot energy levels, dot size fluctuation, nonthermal coupling of carriers in different dots, and band filling effects corroborate this result. A large maximum differential gain of 2{times}10{sup {minus}12} cm{sup 2} at 20 Acm{sup {minus}2} is found. The width of the gain spectrum is determined by participation of excited quantum dot states. We record amore »« less
https://doi.org/10.1063/1.117419

Similar Records