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Title: Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

Abstract

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
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  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1183000
Report Number(s):
SAND-2014-15213J
Journal ID: ISSN 0021-8979; 534136
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION

Citation Formats

Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan, Smith, Michael L., and Biedermann, Laura. Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.. United States: N. p., 2014. Web. doi:10.1063/1.4891830.
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Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan, Smith, Michael L., & Biedermann, Laura. Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.. United States. https://doi.org/10.1063/1.4891830
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Moseley, Michael William, Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan, Smith, Michael L., and Biedermann, Laura. Mon . "Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.". United States. https://doi.org/10.1063/1.4891830. https://www.osti.gov/servlets/purl/1183000.
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@article{osti_1183000,
title = {Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.},
author = {Moseley, Michael William and Allerman, Andrew A. and Crawford, Mary H. and Wierer, Jonathan and Smith, Michael L. and Biedermann, Laura},
abstractNote = {Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.},
doi = {10.1063/1.4891830},
journal = {Journal of Applied Physics},
number = 5,
volume = 116,
place = {United States},
year = {Mon Aug 04 00:00:00 EDT 2014},
month = {Mon Aug 04 00:00:00 EDT 2014}
}
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https://doi.org/10.1063/1.4891830
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