Work function characterization of solution-processed cobalt silicide

Ullah, Syed Shihab; Robinson, Matt; Hoey, Justin; Driver, M. Sky; Caruso, A. N.; Schulz, Douglas L.

doi:10.1088/0268-1242/27/6/065012

Title: Work function characterization of solution-processed cobalt silicide

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Abstract

Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

Authors:

Ullah, Syed Shihab ^[1]; Robinson, Matt ^[1]; Hoey, Justin ^[1]; Driver, M. Sky ^[2]; Caruso, A. N. ^[2]; Schulz, Douglas L. ^[1]

North Dakota State Univ., Fargo, ND (United States)
Univ. of Missouri-Kansas City, Kansas City, MO (United States)

Publication Date:: Tue May 08 00:00:00 EDT 2012

Research Org.:: North Dakota State Univ., Fargo, ND (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1046829

Report Number(s):: DOE/GO/88160-45
Journal ID: ISSN 0268-1242

Grant/Contract Number:: FG36-08GO88160

Resource Type:: Accepted Manuscript

Journal Name:: Semiconductor Science and Technology

Additional Journal Information:: Journal Volume: 27; Journal Issue: 6; Journal ID: ISSN 0268-1242

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Ullah, Syed Shihab, Robinson, Matt, Hoey, Justin, Driver, M. Sky, Caruso, A. N., and Schulz, Douglas L. Work function characterization of solution-processed cobalt silicide.  United States: N. p., 2012. 
Web.  doi:10.1088/0268-1242/27/6/065012.

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                    Ullah, Syed Shihab, Robinson, Matt, Hoey, Justin, Driver, M. Sky, Caruso, A. N., & Schulz, Douglas L. Work function characterization of solution-processed cobalt silicide.  United States.  https://doi.org/10.1088/0268-1242/27/6/065012

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                    Ullah, Syed Shihab, Robinson, Matt, Hoey, Justin, Driver, M. Sky, Caruso, A. N., and Schulz, Douglas L. Tue .  
"Work function characterization of solution-processed cobalt silicide".  United States.  https://doi.org/10.1088/0268-1242/27/6/065012.  https://www.osti.gov/servlets/purl/1046829.

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@article{osti_1046829,

  title        = {Work function characterization of solution-processed cobalt silicide},

  author       = {Ullah, Syed Shihab and Robinson, Matt and Hoey, Justin and Driver, M. Sky and Caruso, A. N. and Schulz, Douglas L.},

  abstractNote = {Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.},

  doi          = {10.1088/0268-1242/27/6/065012},

  journal      = {Semiconductor Science and Technology},

  number       = 6,

  volume       = 27,

  place        = {United States},

  year         = {Tue May 08 00:00:00 EDT 2012},

  month        = {Tue May 08 00:00:00 EDT 2012}

}

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