Demonstration of the DC-Kerr effect in silicon-rich nitride

Friedman, Alex; Nejadriahi, Hani; Sharma, Rajat; Fainman, Yeshaiahu

doi:10.1364/OL.432359

Title: Demonstration of the DC-Kerr effect in silicon-rich nitride

Journal Article · 24 August 2021 · Optics Letters

DOI: https://doi.org/10.1364/OL.432359 · OSTI ID:3362594

^[1];

^[1]; Sharma, Rajat ^[1]; Fainman, Yeshaiahu ^[1]

Univ. of California, San Diego, La Jolla, CA (United States)

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, χ⁽³⁾, as high as (6 ± 0.58) × 10^-19 m²/V². We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a χ⁽³⁾ larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.

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Research Organization:: Univ. of California, San Diego, CA (United States); Univ. of California, San Diego, La Jolla, CA (United States)

Sponsoring Organization:: Advanced Research Projects Agency–Energy; Army Research Office (ARO); Cymer; National Science Foundation (NSF); Office of Naval Research (ONR); San Diego Nanotechnology Infrastructure; USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019273

OSTI ID:: 3362594

Journal Information:: Optics Letters, Journal Name: Optics Letters Journal Issue: 17 Vol. 46; ISSN 1539-4794; ISSN 0146-9592

Publisher:: Optical Society of America (OSA)Copyright Statement

Country of Publication:: United States

Language:: English

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